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Fritz, I. J., Schirber, J. E., Jones, E. D., Drummond, T. J., Dawson, L. R. (1987) Magnetotransport and luminescence measurements in ann‐type selectively doped InGaAs/GaAs strained quantum well structure. Applied Physics Letters, 50 (19). 1370-1372 doi:10.1063/1.97859

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Reference TypeJournal (article/letter/editorial)
TitleMagnetotransport and luminescence measurements in ann‐type selectively doped InGaAs/GaAs strained quantum well structure
JournalApplied Physics Letters
AuthorsFritz, I. J.Author
Schirber, J. E.Author
Jones, E. D.Author
Drummond, T. J.Author
Dawson, L. R.Author
Year1987 (May 11)Volume50
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.97859Search in ResearchGate
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Mindat Ref. ID8480008Long-form Identifiermindat:1:5:8480008:8
GUID0
Full ReferenceFritz, I. J., Schirber, J. E., Jones, E. D., Drummond, T. J., Dawson, L. R. (1987) Magnetotransport and luminescence measurements in ann‐type selectively doped InGaAs/GaAs strained quantum well structure. Applied Physics Letters, 50 (19). 1370-1372 doi:10.1063/1.97859
Plain TextFritz, I. J., Schirber, J. E., Jones, E. D., Drummond, T. J., Dawson, L. R. (1987) Magnetotransport and luminescence measurements in ann‐type selectively doped InGaAs/GaAs strained quantum well structure. Applied Physics Letters, 50 (19). 1370-1372 doi:10.1063/1.97859
In(1987, May) Applied Physics Letters Vol. 50 (19) AIP Publishing

See Also

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Fritz, I. J., Dawson, L. R., Drummond, T. J., Schirber, J. E., Biefeld, R. M. (1986) Hall‐effect measurements inp‐type InGaAs/GaAs strained‐layer superlattices. Applied Physics Letters, 48 (2). 139-141 doi:10.1063/1.96976
Fritz, I. J., Doyle, B. L., Schirber, J. E., Jones, E. D., Dawson, L. R., Drummond, T. J. (1986) Influence of built‐in strain on Hall effect in InGaAs/GaAs quantum well structures withp‐type modulation doping. Applied Physics Letters, 49 (10). 581-583 doi:10.1063/1.97047
Fritz, I. J., Drummond, T. J., Osbourn, G. C., Schirber, J. E., Jones, E. D. (1986) Electrical transport of holes in GaAs/InGaAs/GaAs single strained quantum wells. Applied Physics Letters, 48 (24). 1678-1680 doi:10.1063/1.96803
Schirber, J. E., Fritz, I. J., Dawson, L. R. (1985) Light‐hole conduction in InGaAs/GaAs strained‐layer superlattices. Applied Physics Letters, 46 (2). 187-189 doi:10.1063/1.95678
Zipperian, T. E., Dawson, L. R., Drummond, T. J., Schirber, J. E., Fritz, I. J. (1988) GaAs/(In,Ga)As,p‐channel, multiple strained quantum well field‐effect transistors with high transconductance and high peak saturated drain current. Applied Physics Letters, 52 (12). 975-977 doi:10.1063/1.99246
Fritz, I. J., Gourley, P. L., Dawson, L. R., Schirber, J. E. (1988) Electrical and optical studies of dislocation filtering in InGaAs/GaAs strained‐layer superlattices. Applied Physics Letters, 53 (12). 1098-1100 doi:10.1063/1.100032
Drummond, T. J., Zipperian, T. E., Fritz, I. J., Schirber, J. E., Plut, T. A. (1986) p‐channel, strained quantum well, field‐effect transistor. Applied Physics Letters, 49 (8). 461-463 doi:10.1063/1.97116
Jones, E. D., Ackermann, H., Schirber, J. E., Drummond, T. J., Dawson, L. R., Fritz, I. J. (1985) Magneto‐optic determinations of the pressure dependence of band‐gap energies and effective masses in strained‐layer superlattices. Applied Physics Letters, 47 (5). 492-494 doi:10.1063/1.96103
Osbourn, G. C., Schirber, J. E., Drummond, T. J., Dawson, L. R., Doyle, B. L., Fritz, I. J. (1986) Large valence‐band nonparabolicity and tailorable hole masses in strained‐layer superlattices. Applied Physics Letters, 49 (12). 731-733 doi:10.1063/1.97582
Fritz, I. J., Gourley, P. L., Dawson, L. R. (1987) Critical layer thickness in In0.2Ga0.8As/GaAs single strained quantum well structures. Applied Physics Letters, 51 (13). 1004-1006 doi:10.1063/1.98984
Jones, E. D., Lyo, S. K., Fritz, I. J., Klem, J. F., Schirber, J. E., Tigges, C. P., Drummond, T. J. (1989) Determination of energy‐band dispersion curves in strained‐layer structures. Applied Physics Letters, 54 (22). 2227-2229 doi:10.1063/1.101367
 
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