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Schwarz, S. A., Mei, P., Venkatesan, T., Bhat, R., Hwang, D. M., Schwartz, C. L., Koza, M., Nazar, L., Skromme, B. J. (1988) InGaAs/InP superlattice mixing induced by Zn or Si diffusion. Applied Physics Letters, 53 (12). 1051-1053 doi:10.1063/1.100406

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Reference TypeJournal (article/letter/editorial)
TitleInGaAs/InP superlattice mixing induced by Zn or Si diffusion
JournalApplied Physics Letters
AuthorsSchwarz, S. A.Author
Mei, P.Author
Venkatesan, T.Author
Bhat, R.Author
Hwang, D. M.Author
Schwartz, C. L.Author
Koza, M.Author
Nazar, L.Author
Skromme, B. J.Author
Year1988 (September 19)Volume53
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.100406Search in ResearchGate
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Mindat Ref. ID8484198Long-form Identifiermindat:1:5:8484198:8
GUID0
Full ReferenceSchwarz, S. A., Mei, P., Venkatesan, T., Bhat, R., Hwang, D. M., Schwartz, C. L., Koza, M., Nazar, L., Skromme, B. J. (1988) InGaAs/InP superlattice mixing induced by Zn or Si diffusion. Applied Physics Letters, 53 (12). 1051-1053 doi:10.1063/1.100406
Plain TextSchwarz, S. A., Mei, P., Venkatesan, T., Bhat, R., Hwang, D. M., Schwartz, C. L., Koza, M., Nazar, L., Skromme, B. J. (1988) InGaAs/InP superlattice mixing induced by Zn or Si diffusion. Applied Physics Letters, 53 (12). 1051-1053 doi:10.1063/1.100406
In(1988, September) Applied Physics Letters Vol. 53 (12) AIP Publishing

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Hwang, D. M., Schwarz, S. A., Mei, P., Bhat, R., Venkatesan, T., Nazar, L., Schwartz, C. L. (1989) Conversion of InP/In0.53Ga0.47As superlattices to Zn3P2/In1−xGaxAs and Zn3P2/Zn3As2superlattices by Zn diffusion. Applied Physics Letters, 54 (12). 1160-1162 doi:10.1063/1.101480
Venkatesan, T., Schwarz, S. A., Hwang, D. M., Bhat, R., Koza, M., Yoon, H. W., Mei, P., Arakawa, Y., Yariv, A. (1986) Dose‐dependent mixing of AlAs‐GaAs superlattices by Si ion implantation. Applied Physics Letters, 49 (12). 701-703 doi:10.1063/1.97635
Mei, P., Schwarz, S. A., Venkatesan, T., Schwartz, C. L., Harbison, J. P., Florez, L., Theodore, N. D., Carter, C. B. (1988) Mixing inhibition and crystalline defects in heavily Si‐doped AlAs/GaAs superlattices. Applied Physics Letters, 53 (26). 2650-2652 doi:10.1063/1.100183
Schwarz, S. A., Venkatesan, T., Hwang, D. M., Yoon, H. W., Bhat, R., Arakawa, Y. (1987) Process dependence of AlAs/GaAs superlattice mixing induced by silicon implantation. Applied Physics Letters, 50 (5). 281-283 doi:10.1063/1.98225
Skromme, B. J., Bhat, R., Koza, M. A., Schwarz, S. A., Ravi, T. S., Hwang, D. M. (1990) Vertical transport in semiconductor superlattices probed by miniband-to-acceptor magnetoluminescence. Physical Review Letters, 65 (16). 2050-2053 doi:10.1103/physrevlett.65.2050
Lo, Y. H., Deri, R. J., Harbison, J., Skromme, B. J., Seto, M., Hwang, D. M., Lee, T. P. (1988) GaAs‐on‐InP heteroepitaxial waveguides grown by molecular beam epitaxy. Applied Physics Letters, 53 (14). 1242-1244 doi:10.1063/1.100026
Mei, P., Venkatesan, T., Schwarz, S. A., Stoffel, N. G., Harbison, J. P., Hart, D. L., Florez, L. A. (1988) Comparative studies of ion‐induced mixing of GaAs‐AlAs superlattices. Applied Physics Letters, 52 (18). 1487-1489 doi:10.1063/1.99107
Skromme, B. J., Bhat, R., Koza, M. A. (1988) Highly resolved excitonic spectra in GaAs/AlGaAs superlattices grown by organometallic chemical vapor deposition. Applied Physics Letters, 52 (12). 990-992 doi:10.1063/1.99251
Schwarz, S. A., Pudensi, M. A. A., Sands, T., Gmitter, T. J., Bhat, R., Koza, M., Wang, L. C., Lau, S. S. (1992) Backside secondary ion mass spectrometry study of a Ge/Pd ohmic contact to InP. Applied Physics Letters, 60 (9). 1123-1125 doi:10.1063/1.106428
Venkatesan, T., Inam, A., Dutta, B., Ramesh, R., Hegde, M. S., Wu, X. D., Nazar, L., Chang, C. C., Barner, J. B., Hwang, D. M., Rogers, C. T. (1990) Epitaxial Y1Ba2Cu3O7−y/Y1−xPrxBa2Cu3O7−yheterostructures. Applied Physics Letters, 56 (4). 391-393 doi:10.1063/1.103291
Mei, P., Schwarz, S. A., Venkatesan, T., Schwartz, C. L., Colas, E. (1989) Study of interdiffusion in a Te‐doped AlAs‐GaAs superlattice. Journal of Applied Physics, 65 (5). 2165-2167 doi:10.1063/1.342848
 
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