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Mei, P., Venkatesan, T., Schwarz, S. A., Stoffel, N. G., Harbison, J. P., Hart, D. L., Florez, L. A. (1988) Comparative studies of ion‐induced mixing of GaAs‐AlAs superlattices. Applied Physics Letters, 52 (18). 1487-1489 doi:10.1063/1.99107

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Reference TypeJournal (article/letter/editorial)
TitleComparative studies of ion‐induced mixing of GaAs‐AlAs superlattices
JournalApplied Physics Letters
AuthorsMei, P.Author
Venkatesan, T.Author
Schwarz, S. A.Author
Stoffel, N. G.Author
Harbison, J. P.Author
Hart, D. L.Author
Florez, L. A.Author
Year1988 (May 2)Volume52
Issue18
PublisherAIP Publishing
DOIdoi:10.1063/1.99107Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8482919Long-form Identifiermindat:1:5:8482919:9
GUID0
Full ReferenceMei, P., Venkatesan, T., Schwarz, S. A., Stoffel, N. G., Harbison, J. P., Hart, D. L., Florez, L. A. (1988) Comparative studies of ion‐induced mixing of GaAs‐AlAs superlattices. Applied Physics Letters, 52 (18). 1487-1489 doi:10.1063/1.99107
Plain TextMei, P., Venkatesan, T., Schwarz, S. A., Stoffel, N. G., Harbison, J. P., Hart, D. L., Florez, L. A. (1988) Comparative studies of ion‐induced mixing of GaAs‐AlAs superlattices. Applied Physics Letters, 52 (18). 1487-1489 doi:10.1063/1.99107
In(1988, May) Applied Physics Letters Vol. 52 (18) AIP Publishing

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Mei, P., Schwarz, S. A., Venkatesan, T., Schwartz, C. L., Harbison, J. P., Florez, L., Theodore, N. D., Carter, C. B. (1988) Mixing inhibition and crystalline defects in heavily Si‐doped AlAs/GaAs superlattices. Applied Physics Letters, 53 (26). 2650-2652 doi:10.1063/1.100183
Mei, P., Yoon, H. W., Venkatesan, T., Schwarz, S. A., Harbison, J. P. (1987) Kinetics of silicon‐induced mixing of AlAs‐GaAs superlattices. Applied Physics Letters, 50 (25). 1823-1825 doi:10.1063/1.97709
Venkatesan, T., Schwarz, S. A., Hwang, D. M., Bhat, R., Koza, M., Yoon, H. W., Mei, P., Arakawa, Y., Yariv, A. (1986) Dose‐dependent mixing of AlAs‐GaAs superlattices by Si ion implantation. Applied Physics Letters, 49 (12). 701-703 doi:10.1063/1.97635
Stoffel, N. G., Schwarz, S. A., Pudensi, M. A. A., Kash, K., Florez, L. T., Harbison, J. P., Wilkens, B. J. (1992) Evidence for heavy ion channeling in AlGaAs at low energies. Applied Physics Letters, 60 (13). 1603-1605 doi:10.1063/1.107239
Tanaka, M., Harbison, J. P., Sands, T., Cheeks, T. L., De Boeck, J., Hwang, D. M., Florez, L. T., Keramidas, V. G. (1993) Epitaxial τMnAl/NiAl magnetic multilayers on AlAs/GaAs. Applied Physics Letters, 63 (6). 839-841 doi:10.1063/1.109871
Schwarz, S. A., Mei, P., Venkatesan, T., Bhat, R., Hwang, D. M., Schwartz, C. L., Koza, M., Nazar, L., Skromme, B. J. (1988) InGaAs/InP superlattice mixing induced by Zn or Si diffusion. Applied Physics Letters, 53 (12). 1051-1053 doi:10.1063/1.100406
Mei, P., Schwarz, S. A., Venkatesan, T., Schwartz, C. L., Colas, E. (1989) Study of interdiffusion in a Te‐doped AlAs‐GaAs superlattice. Journal of Applied Physics, 65 (5). 2165-2167 doi:10.1063/1.342848
Xiong, Fulin, Tombrello, T. A., Schwartz, C. L., Schwarz, S. A. (1990) MeV oxygen ion implantation induced compositional intermixing in AlAs/GaAs superlattices. Applied Physics Letters, 57 (9). 896-898 doi:10.1063/1.103397
Orenstein, M., Lehmen, A. C. Von, Chang‐Hasnain, C., Stoffel, N. G., Harbison, J. P., Florez, L. T., Clausen, E., Jewell, J. E. (1990) Vertical‐cavity surface‐emitting InGaAs/GaAs lasers with planar lateral definition. Applied Physics Letters, 56 (24). 2384-2386 doi:10.1063/1.102923
Chang‐Hasnain, C. J., Orenstein, M., Von Lehmen, A., Florez, L. T., Harbison, J. P., Stoffel, N. G. (1990) Transverse mode characteristics of vertical cavity surface‐emitting lasers. Applied Physics Letters, 57 (3). 218-220 doi:10.1063/1.103743
Aspnes, D. E., Harbison, J. P., Studna, A. A., Florez, L. T. (1988) Reflectance‐difference spectroscopy system for real‐time measurements of crystal growth. Applied Physics Letters, 52 (12). 957-959 doi:10.1063/1.99240
 
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