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Hwang, D. M., Schwarz, S. A., Mei, P., Bhat, R., Venkatesan, T., Nazar, L., Schwartz, C. L. (1989) Conversion of InP/In0.53Ga0.47As superlattices to Zn3P2/In1−xGaxAs and Zn3P2/Zn3As2superlattices by Zn diffusion. Applied Physics Letters, 54 (12). 1160-1162 doi:10.1063/1.101480

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Reference TypeJournal (article/letter/editorial)
TitleConversion of InP/In0.53Ga0.47As superlattices to Zn3P2/In1−xGaxAs and Zn3P2/Zn3As2superlattices by Zn diffusion
JournalApplied Physics Letters
AuthorsHwang, D. M.Author
Schwarz, S. A.Author
Mei, P.Author
Bhat, R.Author
Venkatesan, T.Author
Nazar, L.Author
Schwartz, C. L.Author
Year1989 (March 20)Volume54
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.101480Search in ResearchGate
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Mindat Ref. ID8486061Long-form Identifiermindat:1:5:8486061:9
GUID0
Full ReferenceHwang, D. M., Schwarz, S. A., Mei, P., Bhat, R., Venkatesan, T., Nazar, L., Schwartz, C. L. (1989) Conversion of InP/In0.53Ga0.47As superlattices to Zn3P2/In1−xGaxAs and Zn3P2/Zn3As2superlattices by Zn diffusion. Applied Physics Letters, 54 (12). 1160-1162 doi:10.1063/1.101480
Plain TextHwang, D. M., Schwarz, S. A., Mei, P., Bhat, R., Venkatesan, T., Nazar, L., Schwartz, C. L. (1989) Conversion of InP/In0.53Ga0.47As superlattices to Zn3P2/In1−xGaxAs and Zn3P2/Zn3As2superlattices by Zn diffusion. Applied Physics Letters, 54 (12). 1160-1162 doi:10.1063/1.101480
In(1989, March) Applied Physics Letters Vol. 54 (12) AIP Publishing

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Schwarz, S. A., Mei, P., Venkatesan, T., Bhat, R., Hwang, D. M., Schwartz, C. L., Koza, M., Nazar, L., Skromme, B. J. (1988) InGaAs/InP superlattice mixing induced by Zn or Si diffusion. Applied Physics Letters, 53 (12). 1051-1053 doi:10.1063/1.100406
Venkatesan, T., Schwarz, S. A., Hwang, D. M., Bhat, R., Koza, M., Yoon, H. W., Mei, P., Arakawa, Y., Yariv, A. (1986) Dose‐dependent mixing of AlAs‐GaAs superlattices by Si ion implantation. Applied Physics Letters, 49 (12). 701-703 doi:10.1063/1.97635
Mei, P., Schwarz, S. A., Venkatesan, T., Schwartz, C. L., Harbison, J. P., Florez, L., Theodore, N. D., Carter, C. B. (1988) Mixing inhibition and crystalline defects in heavily Si‐doped AlAs/GaAs superlattices. Applied Physics Letters, 53 (26). 2650-2652 doi:10.1063/1.100183
Hwang, D. M., Venkatesan, T., Chang, C. C., Nazar, L., Wu, X. D., Inam, A., Hegde, M. S. (1989) Microstructure ofinsituepitaxially grown superconducting Y‐Ba‐Cu‐O thin films. Applied Physics Letters, 54 (17). 1702-1704 doi:10.1063/1.101562
Venkatesan, T., Wu, X. D., Dutta, B., Inam, A., Hegde, M. S., Hwang, D. M., Chang, C. C., Nazar, L., Wilkens, B. (1989) High‐temperature superconductivity in ultrathin films of Y1Ba2Cu3O7−x. Applied Physics Letters, 54 (6). 581-583 doi:10.1063/1.101463
Park, Moon‐Ho, Wang, L. C., Cheng, J. Y., Deng, Fei, Lau, S. S., Palmstro/m, C. J. (1996) Low resistance Zn3P2/InP heterostructure Ohmic contact to p‐InP. Applied Physics Letters, 68 (7). 952-954 doi:10.1063/1.116109
Mei, P., Schwarz, S. A., Venkatesan, T., Schwartz, C. L., Colas, E. (1989) Study of interdiffusion in a Te‐doped AlAs‐GaAs superlattice. Journal of Applied Physics, 65 (5). 2165-2167 doi:10.1063/1.342848
Allen, S. J., Bastos, P., Cox, H. M., DeRosa, F., Hwang, D. M., Nazar, L. (1989) Filamentary structure and transport in corrugated InGaAs/InP superlattices grown by vapor levitation epitaxy. Journal of Applied Physics, 66 (3). 1222-1226 doi:10.1063/1.343467
Mei, P., Venkatesan, T., Schwarz, S. A., Stoffel, N. G., Harbison, J. P., Hart, D. L., Florez, L. A. (1988) Comparative studies of ion‐induced mixing of GaAs‐AlAs superlattices. Applied Physics Letters, 52 (18). 1487-1489 doi:10.1063/1.99107
Wu, X. D., Inam, A., Hegde, M. S., Wilkens, B., Chang, C. C., Hwang, D. M., Nazar, L., Venkatesan, T., Miura, S., Matsubara, S., Miyasaka, Y., Shohata, N. (1989) High critical currents in epitaxial YBa2Cu3O7−xthin films on silicon with buffer layers. Applied Physics Letters, 54 (8). 754-756 doi:10.1063/1.101471
Schwarz, S. A., Venkatesan, T., Hwang, D. M., Yoon, H. W., Bhat, R., Arakawa, Y. (1987) Process dependence of AlAs/GaAs superlattice mixing induced by silicon implantation. Applied Physics Letters, 50 (5). 281-283 doi:10.1063/1.98225
 
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