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Lo, Y. H., Deri, R. J., Harbison, J., Skromme, B. J., Seto, M., Hwang, D. M., Lee, T. P. (1988) GaAs‐on‐InP heteroepitaxial waveguides grown by molecular beam epitaxy. Applied Physics Letters, 53 (14). 1242-1244 doi:10.1063/1.100026

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Reference TypeJournal (article/letter/editorial)
TitleGaAs‐on‐InP heteroepitaxial waveguides grown by molecular beam epitaxy
JournalApplied Physics Letters
AuthorsLo, Y. H.Author
Deri, R. J.Author
Harbison, J.Author
Skromme, B. J.Author
Seto, M.Author
Hwang, D. M.Author
Lee, T. P.Author
Year1988 (October 3)Volume53
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.100026Search in ResearchGate
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Mindat Ref. ID8484306Long-form Identifiermindat:1:5:8484306:5
GUID0
Full ReferenceLo, Y. H., Deri, R. J., Harbison, J., Skromme, B. J., Seto, M., Hwang, D. M., Lee, T. P. (1988) GaAs‐on‐InP heteroepitaxial waveguides grown by molecular beam epitaxy. Applied Physics Letters, 53 (14). 1242-1244 doi:10.1063/1.100026
Plain TextLo, Y. H., Deri, R. J., Harbison, J., Skromme, B. J., Seto, M., Hwang, D. M., Lee, T. P. (1988) GaAs‐on‐InP heteroepitaxial waveguides grown by molecular beam epitaxy. Applied Physics Letters, 53 (14). 1242-1244 doi:10.1063/1.100026
In(1988, October) Applied Physics Letters Vol. 53 (14) AIP Publishing

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Jewell, J. L., Lee, Y. H., McCall, S. L., Harbison, J. P., Florez, L. T. (1988) High‐finesse (Al,Ga)As interference filters grown by molecular beam epitaxy. Applied Physics Letters, 53 (8). 640-642 doi:10.1063/1.99838
Deri, R. J., Kapon, E., Harbison, J. P., Seto, M., Yun, C. P., Florez, L. T. (1988) Low‐loss GaAs/AlGaAs waveguide phase modulator using a W‐shaped index profile. Applied Physics Letters, 53 (19). 1803-1805 doi:10.1063/1.99786
Olego, D. J., Tamura, M., Okuno, Y., Kawano, T., Hashimoto, A. (1992) Heteroepitaxial InP layers grown by metalorganic chemical vapor deposition on novel GaAs on Si buffers obtained by molecular beam epitaxy. Journal of Applied Physics, 71 (9). 4329-4332 doi:10.1063/1.350814
Kim, Young‐Soon, Ramaswamy, Ramu V., Sakai, Shiro, Matyi, R. J., Shichijo, H. (1988) GaAs/AlGaAs optical waveguides on silicon substrates grown by molecular beam epitaxy. Applied Physics Letters, 53 (17). 1586-1587 doi:10.1063/1.99920
Turco‐Sandroff, F. S., Brasil, M. J. S. P., Nahory, R. E., Martin, R. J., Zhang, Y., Skromme, B. J. (1991) Arsenic‐dopedP‐type ZnTe grown by molecular beam epitaxy. Applied Physics Letters, 59 (6). 688-690 doi:10.1063/1.105366
Richter, H. J., Smith, R. S., Herres, N., Seelmann‐Eggebert, M., Wennekers, P. (1988) Analysis of ytterbium arsenide films grown on GaAs by molecular beam epitaxy. Applied Physics Letters, 53 (2). 99-101 doi:10.1063/1.100361
Schwarz, S. A., Mei, P., Venkatesan, T., Bhat, R., Hwang, D. M., Schwartz, C. L., Koza, M., Nazar, L., Skromme, B. J. (1988) InGaAs/InP superlattice mixing induced by Zn or Si diffusion. Applied Physics Letters, 53 (12). 1051-1053 doi:10.1063/1.100406
Lee, H. Y., Crook, M. D., Hafich, M. J., Quigley, J. H., Robinson, G. Y., Li, D., Otsuka, N. (1989) InGaP/GaAs superlattices grown by gas‐source molecular beam epitaxy. Applied Physics Letters, 55 (22). 2322-2324 doi:10.1063/1.102050
Lee, M. K., Chiu, T. H., Dayem, A., Agyekum, E. (1988) Isoelectronic doping in GaAs epilayers grown by molecular beam epitaxy. Applied Physics Letters, 53 (26). 2653-2655 doi:10.1063/1.100184
Temkin, H., Hwang, J. C. M. (1983) Undoped, semi‐insulating GaAs layers grown by molecular beam epitaxy. Applied Physics Letters, 42 (2). 178-180 doi:10.1063/1.93866
Horikawa, H., Ogawa, Y., Kawai, Y., Sakuta, M. (1988) Heteroepitaxial growth of InP on a GaAs substrate by low‐pressure metalorganic vapor phase epitaxy. Applied Physics Letters, 53 (5). 397-399 doi:10.1063/1.99890
 
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