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Collins, R. W. (1988) Insitustudy ofp‐type amorphous silicon growth from B2H6:SiH4mixtures: Surface reactivity and interface effects. Applied Physics Letters, 53 (12). 1086-1088 doi:10.1063/1.100029

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Reference TypeJournal (article/letter/editorial)
TitleInsitustudy ofp‐type amorphous silicon growth from B2H6:SiH4mixtures: Surface reactivity and interface effects
JournalApplied Physics Letters
AuthorsCollins, R. W.Author
Year1988 (September 19)Volume53
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.100029Search in ResearchGate
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Mindat Ref. ID8484147Long-form Identifiermindat:1:5:8484147:4
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Full ReferenceCollins, R. W. (1988) Insitustudy ofp‐type amorphous silicon growth from B2H6:SiH4mixtures: Surface reactivity and interface effects. Applied Physics Letters, 53 (12). 1086-1088 doi:10.1063/1.100029
Plain TextCollins, R. W. (1988) Insitustudy ofp‐type amorphous silicon growth from B2H6:SiH4mixtures: Surface reactivity and interface effects. Applied Physics Letters, 53 (12). 1086-1088 doi:10.1063/1.100029
In(1988, September) Applied Physics Letters Vol. 53 (12) AIP Publishing

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Collins, R. W. (1988) Surface, interface, and bulk properties of amorphous carbon films characterized byinsituellipsometry. Applied Physics Letters, 52 (24). 2025-2027 doi:10.1063/1.99570
Utsunomiya, Michito, Yoshida, Akira (1988) Strain dependence ofp‐i‐nhydrogenated amorphous silicon junctions. Applied Physics Letters, 53 (23). 2296-2298 doi:10.1063/1.100258
Koh, Joohyun, Fujiwara, H., Koval, R. J., Wronski, C. R., Collins, R. W. (1999) Real time spectroscopic ellipsometry studies of the nucleation and growth of p-type microcrystalline silicon films on amorphous silicon using B2H6, B(CH3)3 and BF3 dopant source gases. Journal of Applied Physics, 85 (8). 4141-4153 doi:10.1063/1.370323
Blayo, N., Drévillon, B. (1991) Insitustudy of the growth of hydrogenated amorphous silicon by infrared ellipsometry. Applied Physics Letters, 59 (8). 950-952 doi:10.1063/1.106311
Weil, R., Busso, A., Beyer, W. (1988) Effusion of deuterium from deuterated‐fluorinated amorphous silicon under illumination. Applied Physics Letters, 53 (25). 2477-2479 doi:10.1063/1.100218
Zhang, R. Q., Wang, W. L., Esteve, J., Bertran, E. (1996) Structural modeling of the possible growth of oriented textured single‐crystal diamond film on a silicon (111) surface. Applied Physics Letters, 69 (8). 1086-1088 doi:10.1063/1.117066
Hack, M., Street, R. A. (1988) Realistic modeling of the electronic properties of doped amorphous silicon. Applied Physics Letters, 53 (12). 1083-1085 doi:10.1063/1.100028
Collins, R. W., Cavese, J. M. (1986) Influence of substrate structure on the growth of hydrogenated amorphous silicon studied byinsituellipsometry. Journal of Applied Physics, 60 (12). 4169-4176 doi:10.1063/1.337501
Collins, R. W., Pawlowski, A. (1986) The nucleation and growth of glow‐discharge hydrogenated amorphous silicon. Journal of Applied Physics, 59 (4). 1160-1166 doi:10.1063/1.336553
Inoue, Takeshi, Tanaka, Tatsuya, Konagai, Makoto, Takahashi, Kiyoshi (1984) Electronic and optical properties ofp‐type amorphous silicon and wide band‐gap amorphous silicon carbide films prepared by photochemical vapor deposition. Applied Physics Letters, 44 (9). 871-873 doi:10.1063/1.94962
Fujiwara, H., Koh, Joohyun, Wronski, C. R., Collins, R. W. (1999) Analysis of contamination, hydrogen emission, and surface temperature variations using real time spectroscopic ellipsometry during p/i interface formation in amorphous silicon p-i-n solar cells. Applied Physics Letters, 74 (24). 3687-3689 doi:10.1063/1.123230
 
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