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Hack, M., Street, R. A. (1988) Realistic modeling of the electronic properties of doped amorphous silicon. Applied Physics Letters, 53 (12). 1083-1085 doi:10.1063/1.100028

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Reference TypeJournal (article/letter/editorial)
TitleRealistic modeling of the electronic properties of doped amorphous silicon
JournalApplied Physics Letters
AuthorsHack, M.Author
Street, R. A.Author
Year1988 (September 19)Volume53
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.100028Search in ResearchGate
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Mindat Ref. ID8484144Long-form Identifiermindat:1:5:8484144:7
GUID0
Full ReferenceHack, M., Street, R. A. (1988) Realistic modeling of the electronic properties of doped amorphous silicon. Applied Physics Letters, 53 (12). 1083-1085 doi:10.1063/1.100028
Plain TextHack, M., Street, R. A. (1988) Realistic modeling of the electronic properties of doped amorphous silicon. Applied Physics Letters, 53 (12). 1083-1085 doi:10.1063/1.100028
In(1988, September) Applied Physics Letters Vol. 53 (12) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Street, R. A., Kakalios, J., Hack, M. (1988) Electron drift mobility in doped amorphous silicon. Physical Review B, 38 (8) 5603-5609 doi:10.1103/physrevb.38.5603
Winer, K., Street, R. A. (1988) Interfacial defect creation by interstitial lithium doping of amorphous hydrogenated silicon. Applied Physics Letters, 53 (6). 505-507 doi:10.1063/1.99881
Street, R. A., Hack, M., Jackson, W. B. (1988) Mechanisms of thermal equilibration in doped amorphous silicon. Physical Review B, 37 (8) 4209-4224 doi:10.1103/physrevb.37.4209
Schwarz, R., Wang, F., Reissner, M. (1993) Fermi level dependence of the ambipolar diffusion length in amorphous silicon thin film transistors. Applied Physics Letters, 63 (8). 1083-1085 doi:10.1063/1.109840
Street, R. A., Thompson, M. J. (1984) Electronic states at the hydrogenated amorphous silicon/silcon nitride interface. Applied Physics Letters, 45 (7). 769-771 doi:10.1063/1.95398
Bylsma, R. B., Olson, D. H., Glass, A. M. (1988) Photorefractive imaging of semiconductor wafers. Applied Physics Letters, 52 (13). 1083-1085 doi:10.1063/1.99218
Hack, M., Street, R. A. (1992) Analysis of double injection transients in amorphous siliconp‐i‐ndiodes. Journal of Applied Physics, 72 (6). 2331-2339 doi:10.1063/1.351575
Hack, M., Shur, M. (1983) Theoretical modeling of amorphous silicon‐based alloyp‐i‐nsolar cells. Journal of Applied Physics, 54 (10). 5858-5863 doi:10.1063/1.331812
Kanicki, Jerzy (1988) Contact resistance to undoped and phosphorus‐doped hydrogenated amorphous silicon films. Applied Physics Letters, 53 (20). 1943-1945 doi:10.1063/1.100330
Hack, M., Madan, A. (1982) Photoelectronic effects in amorphous silicon based alloys. Applied Physics Letters, 41 (3). 272-274 doi:10.1063/1.93498
Hack, M., McGill, J., Czubatyj, W., Singh, R., Shur, M., Madan, A. (1982) Minority‐carrier diffusion lengths in amorphous silicon‐based alloys. Journal of Applied Physics, 53 (9). 6270-6275 doi:10.1063/1.331545
 
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