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Bylsma, R. B., Olson, D. H., Glass, A. M. (1988) Photorefractive imaging of semiconductor wafers. Applied Physics Letters, 52 (13). 1083-1085 doi:10.1063/1.99218

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Reference TypeJournal (article/letter/editorial)
TitlePhotorefractive imaging of semiconductor wafers
JournalApplied Physics Letters
AuthorsBylsma, R. B.Author
Olson, D. H.Author
Glass, A. M.Author
Year1988 (March 28)Volume52
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.99218Search in ResearchGate
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Mindat Ref. ID8482635Long-form Identifiermindat:1:5:8482635:0
GUID0
Full ReferenceBylsma, R. B., Olson, D. H., Glass, A. M. (1988) Photorefractive imaging of semiconductor wafers. Applied Physics Letters, 52 (13). 1083-1085 doi:10.1063/1.99218
Plain TextBylsma, R. B., Olson, D. H., Glass, A. M. (1988) Photorefractive imaging of semiconductor wafers. Applied Physics Letters, 52 (13). 1083-1085 doi:10.1063/1.99218
In(1988, March) Applied Physics Letters Vol. 52 (13) AIP Publishing

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Bylsma, R. B., Bridenbaugh, P. M., Olson, D. H., Glass, A. M. (1987) Photorefractive properties of doped cadmium telluride. Applied Physics Letters, 51 (12). 889-891 doi:10.1063/1.98845
Bylsma, R. B., Glass, A. M., Olson, D. H., Cronin‐Golomb, M. (1989) Self‐pumped phase conjugation in InP:Fe. Applied Physics Letters, 54 (20). 1968-1970 doi:10.1063/1.101187
Glass, A. M., Tai, K., Bylsma, R. B., Feldman, R. D., Olson, D. H., Austin, R. F. (1988) Room‐temperature optically pumped Cd0.25Zn0.75Te/ZnTe quantum well lasers grown on GaAs substrates. Applied Physics Letters, 53 (10). 834-836 doi:10.1063/1.100086
Lam, H. W., Pinizzotto, R. F., Malhi, S. D. S., Vaandrager, B. L. (1982) Lateral zone growth and characterization of device quality silicon‐on‐insulator wafers. Applied Physics Letters, 41 (11). 1083-1085 doi:10.1063/1.93373
Hack, M., Street, R. A. (1988) Realistic modeling of the electronic properties of doped amorphous silicon. Applied Physics Letters, 53 (12). 1083-1085 doi:10.1063/1.100028
Glass, A. M., Johnson, A. M., Olson, D. H., Simpson, W., Ballman, A. A. (1984) Four‐wave mixing in semi‐insulating InP and GaAs using the photorefractive effect. Applied Physics Letters, 44 (10). 948-950 doi:10.1063/1.94607
Partovi, A., Glass, A. M., Olson, D. H., Zydzik, G. J., O’Bryan, H. M., Chiu, T. H., Knox, W. H. (1993) Cr‐doped GaAs/AlGaAs semi‐insulating multiple quantum well photorefractive devices. Applied Physics Letters, 62 (5). 464-466 doi:10.1063/1.108934
Rytz, D., Klein, M. B., Mullen, R. A., Schwartz, R. N., Valley, G. C., Wechsler, B. A. (1988) High‐efficiency fast response in photorefractive BaTiO3at 120 °C. Applied Physics Letters, 52 (21). 1759-1761 doi:10.1063/1.99721
Podlesnik, D. V., Gilgen, H. H., Osgood, R. M., Sanchez, A. (1983) Maskless chemical etching of submicrometer gratings in single‐crystalline GaAs. Applied Physics Letters, 43 (12). 1083-1085 doi:10.1063/1.94250
Liang, Zhongning, Mo, Dang (1988) Ellipsometric spectra of silicon‐on‐insulator wafers. Applied Physics Letters, 52 (13). 1050-1052 doi:10.1063/1.99207
Partovi, A., Glass, A. M., Olson, D. H., Feldman, R. D., Austin, R. F., Lee, D., Johnson, A. M., Miller, D. A. B. (1991) Electroabsorption in II‐VI multiple quantum wells. Applied Physics Letters, 58 (4). 334-336 doi:10.1063/1.104678
 
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