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Wijaranakula, W., Matlock, J. H., Mollenkopf, H. (1988) Oxygen diffusion in antimony‐doped silicon. Applied Physics Letters, 53 (12). 1068-1070 doi:10.1063/1.100068

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Reference TypeJournal (article/letter/editorial)
TitleOxygen diffusion in antimony‐doped silicon
JournalApplied Physics Letters
AuthorsWijaranakula, W.Author
Matlock, J. H.Author
Mollenkopf, H.Author
Year1988 (September 19)Volume53
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.100068Search in ResearchGate
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Mindat Ref. ID8484191Long-form Identifiermindat:1:5:8484191:5
GUID0
Full ReferenceWijaranakula, W., Matlock, J. H., Mollenkopf, H. (1988) Oxygen diffusion in antimony‐doped silicon. Applied Physics Letters, 53 (12). 1068-1070 doi:10.1063/1.100068
Plain TextWijaranakula, W., Matlock, J. H., Mollenkopf, H. (1988) Oxygen diffusion in antimony‐doped silicon. Applied Physics Letters, 53 (12). 1068-1070 doi:10.1063/1.100068
In(1988, September) Applied Physics Letters Vol. 53 (12) AIP Publishing

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Wijaranakula, W., Matlock, J. H., Mollenkopf, H. (1987) Oxygen precipitation and bulk microdefects induced by the pre‐ and postepitaxial annealing inN/N+(100) silicon wafers. Journal of Applied Physics, 62 (12). 4897-4902 doi:10.1063/1.338997
Wijaranakula, W., Mollenkopf, H., Matlock, J. H. (1990) Photoluminescence of theDlines in silicon containing a high concentration of carbon after a two‐step isochronal anneal. Applied Physics Letters, 56 (8). 764-766 doi:10.1063/1.102707
Wijaranakula, W. (1990) Oxygen diffusion in carbon‐doped silicon. Journal of Applied Physics, 68 (12). 6538-6540 doi:10.1063/1.346833
Oates, A. S., Lin, W. (1988) Temperature dependence of interstitial oxygen diffusion in antimony‐doped Czochralski silicon. Applied Physics Letters, 53 (26). 2659-2660 doi:10.1063/1.100186
Wijaranakula, W., Matlock, J. H. (1989) Influence of the preepitaxial annealing and polycrystalline silicon deposition processes on oxygen precipitation and internal gettering in N/N+(100) epitaxial silicon wafers. Journal of Applied Physics, 65 (5). 2078-2083 doi:10.1063/1.342853
Wijaranakula, W. (1991) Solubility of interstitial oxygen in silicon. Applied Physics Letters, 59 (10). 1185-1187 doi:10.1063/1.105497
Wijaranakula, W. (1992) Oxygen precipitation and defects in heavily doped Czochralski silicon. Journal of Applied Physics, 72 (7). 2713-2723 doi:10.1063/1.351521
Wijaranakula, W., Matlock, J. H. (1991) The effect of the denudation anneal on the precipitate dissolution in Czochralski silicon wafers during the three‐step internal gettering anneal. Journal of Applied Physics, 69 (10). 6982-6989 doi:10.1063/1.347637
Wijaranakula, W. (1993) Effect of point defect reactions on behavior of boron and oxygen in degenerately doped Czochralski silicon. Applied Physics Letters, 62 (23). 2974-2976 doi:10.1063/1.109161
Wijaranakula, W. (1991) Formation kinetics of oxygen thermal donors in silicon. Applied Physics Letters, 59 (13). 1608-1610 doi:10.1063/1.106245
Ahn, S. T., Kennel, H. W., Plummer, J. D., Tiller, W. A., Rek, Z. U., Stock, S. R. (1988) Effect of oxygen precipitation on phosphorus diffusion in Czochralski silicon. Applied Physics Letters, 53 (1). 34-36 doi:10.1063/1.100114
 
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