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Oates, A. S., Lin, W. (1988) Temperature dependence of interstitial oxygen diffusion in antimony‐doped Czochralski silicon. Applied Physics Letters, 53 (26). 2659-2660 doi:10.1063/1.100186

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Reference TypeJournal (article/letter/editorial)
TitleTemperature dependence of interstitial oxygen diffusion in antimony‐doped Czochralski silicon
JournalApplied Physics Letters
AuthorsOates, A. S.Author
Lin, W.Author
Year1988 (December 26)Volume53
Issue26
PublisherAIP Publishing
DOIdoi:10.1063/1.100186Search in ResearchGate
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Mindat Ref. ID8485265Long-form Identifiermindat:1:5:8485265:6
GUID0
Full ReferenceOates, A. S., Lin, W. (1988) Temperature dependence of interstitial oxygen diffusion in antimony‐doped Czochralski silicon. Applied Physics Letters, 53 (26). 2659-2660 doi:10.1063/1.100186
Plain TextOates, A. S., Lin, W. (1988) Temperature dependence of interstitial oxygen diffusion in antimony‐doped Czochralski silicon. Applied Physics Letters, 53 (26). 2659-2660 doi:10.1063/1.100186
In(1988, December) Applied Physics Letters Vol. 53 (26) AIP Publishing

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Wijaranakula, W., Matlock, J. H., Mollenkopf, H. (1988) Oxygen diffusion in antimony‐doped silicon. Applied Physics Letters, 53 (12). 1068-1070 doi:10.1063/1.100068
Lin, Wen, Oates, A. S. (1990) Anomalous oxygen precipitation in Czochralski silicon. Applied Physics Letters, 56 (2). 128-130 doi:10.1063/1.103050
Wang, Q., Ho, Ihsiu (2006) High-temperature interstitial oxygen diffusion retardation in epitaxial-layered heavily arsenic- or boron-doped Czochralski silicon wafers. Applied Physics Letters, 88 (15). 154107pp. doi:10.1063/1.2195099
Ahn, S. T., Kennel, H. W., Plummer, J. D., Tiller, W. A., Rek, Z. U., Stock, S. R. (1988) Effect of oxygen precipitation on phosphorus diffusion in Czochralski silicon. Applied Physics Letters, 53 (1). 34-36 doi:10.1063/1.100114
Lin, Alice L. (1988) Temperature dependence of Hall effect in arsenic‐doped silicon at intermediate dopant density. Applied Physics Letters, 53 (9). 776-778 doi:10.1063/1.99830
Rozgonyi, G. A., Pearce, C. W. (1977) Interstitial oxygen gettering in Czochralski silicon wafers. Applied Physics Letters, 31 (5). 343-345 doi:10.1063/1.89693
Oates, A.S., Lin, W. (1988) Infrared measurements of interstitial oxygen in heavily doped silicon. Journal of Crystal Growth, 89 (1). 117-123 doi:10.1016/0022-0248(88)90080-2
Ono, Toshiaki, Rozgonyi, George A., Asayama, Eiichi, Horie, Hiroshi, Tsuya, Hideki, Sueoka, Koji (1999) Oxygen diffusion in heavily antimony-, arsenic-, and boron-doped Czochralski silicon wafers. Applied Physics Letters, 74 (24). 3648-3650 doi:10.1063/1.123210
Shimura, F., Higuchi, T., Hockett, R. S. (1988) Outdiffusion of oxygen and carbon in Czochralski silicon. Applied Physics Letters, 53 (1). 69-71 doi:10.1063/1.100126
Takeno, Hiroshi, Sunakawa, Ken, Suezawa, Masashi (2000) Temperature-dependent retardation effect of dopants on oxygen diffusion in heavily doped Czochralski silicon. Applied Physics Letters, 77 (3). 376-378 doi:10.1063/1.126981
Oates, A. S., Newman, R. C. (1986) Involvement of oxygen‐vacancy defects in enhancing oxygen diffusion in silicon. Applied Physics Letters, 49 (5). 262-264 doi:10.1063/1.97190
 
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