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Lin, Alice L. (1988) Temperature dependence of Hall effect in arsenic‐doped silicon at intermediate dopant density. Applied Physics Letters, 53 (9). 776-778 doi:10.1063/1.99830

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Reference TypeJournal (article/letter/editorial)
TitleTemperature dependence of Hall effect in arsenic‐doped silicon at intermediate dopant density
JournalApplied Physics Letters
AuthorsLin, Alice L.Author
Year1988 (August 29)Volume53
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.99830Search in ResearchGate
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Mindat Ref. ID8485786Long-form Identifiermindat:1:5:8485786:4
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Full ReferenceLin, Alice L. (1988) Temperature dependence of Hall effect in arsenic‐doped silicon at intermediate dopant density. Applied Physics Letters, 53 (9). 776-778 doi:10.1063/1.99830
Plain TextLin, Alice L. (1988) Temperature dependence of Hall effect in arsenic‐doped silicon at intermediate dopant density. Applied Physics Letters, 53 (9). 776-778 doi:10.1063/1.99830
In(1988, August) Applied Physics Letters Vol. 53 (9) AIP Publishing

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Oates, A. S., Lin, W. (1988) Temperature dependence of interstitial oxygen diffusion in antimony‐doped Czochralski silicon. Applied Physics Letters, 53 (26). 2659-2660 doi:10.1063/1.100186
Porter, N. A., Marrows, C. H. (2011) Dependence of magnetoresistance on dopant density in phosphorous doped silicon. Journal of Applied Physics, 109 (7). 7pp. doi:10.1063/1.3536663
Massoud, Hisham Z. (1988) Reverse dopant redistribution during the initial stages of the oxidation of heavily doped silicon in dry oxygen. Applied Physics Letters, 53 (6). 497-499 doi:10.1063/1.100618
Forman, Richard A. (1980) Optical study of isotopic effects in the sulfur deep level in silicon. Applied Physics Letters, 37 (9). 776-778 doi:10.1063/1.92085
Huldt, L., Nilsson, N. G., Svantesson, K. G. (1979) The temperature dependence of band‐to‐band Auger recombination in silicon. Applied Physics Letters, 35 (10). 776-777 doi:10.1063/1.90974
Lin, Alice L., Crouse, Allen G., Wendt, Jerry, Campbell, Albert G., Newman, Roger (1981) Electrical and optical properties of tellurium‐doped silicon. Applied Physics Letters, 38 (9). 683-685 doi:10.1063/1.92478
Lin, H.-A., Jaccodine, R., Freund, M. S. (1998) Doping-density dependence of scanning tunneling spectroscopy on lightly doped silicon. Applied Physics Letters, 72 (16). 1993-1995 doi:10.1063/1.121243
Seager, C. H. (1982) Temperature dependence of minority‐carrier recombination velocities at grain boundaries in silicon. Applied Physics Letters, 41 (9). 855-857 doi:10.1063/1.93675
Tao, T. F., Hsia, Yukun (1968) DOPANT DEPENDENCY OF FERMI LEVEL LOCATION IN HEAVILY DOPED SILICON. Applied Physics Letters, 13 (9). 291-292 doi:10.1063/1.1652617
Lin, Alice L. (1982) Electrical and optical properties of magnesium‐diffused silicon. Journal of Applied Physics, 53 (10). 6989-6995 doi:10.1063/1.330045
Brown, T. G., Bradfield, P. L., Hall, D. G. (1987) Concentration dependence of optical emission from sulfur‐doped crystalline silicon. Applied Physics Letters, 51 (20). 1585-1587 doi:10.1063/1.98562
 
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