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Chyi, J.‐I., Kalem, S., Kumar, N. S., Litton, C. W., Morkoç, H. (1988) Growth of InSb and InAs1−xSbxon GaAs by molecular beam epitaxy. Applied Physics Letters, 53 (12). 1092-1094 doi:10.1063/1.100031

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Reference TypeJournal (article/letter/editorial)
TitleGrowth of InSb and InAs1−xSbxon GaAs by molecular beam epitaxy
JournalApplied Physics Letters
AuthorsChyi, J.‐I.Author
Kalem, S.Author
Kumar, N. S.Author
Litton, C. W.Author
Morkoç, H.Author
Year1988 (September 19)Volume53
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.100031Search in ResearchGate
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Mindat Ref. ID8484150Long-form Identifiermindat:1:5:8484150:8
GUID0
Full ReferenceChyi, J.‐I., Kalem, S., Kumar, N. S., Litton, C. W., Morkoç, H. (1988) Growth of InSb and InAs1−xSbxon GaAs by molecular beam epitaxy. Applied Physics Letters, 53 (12). 1092-1094 doi:10.1063/1.100031
Plain TextChyi, J.‐I., Kalem, S., Kumar, N. S., Litton, C. W., Morkoç, H. (1988) Growth of InSb and InAs1−xSbxon GaAs by molecular beam epitaxy. Applied Physics Letters, 53 (12). 1092-1094 doi:10.1063/1.100031
In(1988, September) Applied Physics Letters Vol. 53 (12) AIP Publishing

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Kalem, Ş., Chyi, J., Litton, C. W., Morkoç, H., Kan, S. C., Yariv, A. (1988) Electrical properties of InAs epilayers grown by molecular beam epitaxy on Si substrates. Applied Physics Letters, 53 (7). 562-564 doi:10.1063/1.99857
Chyi, J.‐I., Biswas, D., Iyer, S. V., Kumar, N. S., Morkoç, H., Bean, R., Zanio, K., Lee, H.‐Y., Chen, Haydn (1989) Molecular beam epitaxial growth and characterization of InSb on Si. Applied Physics Letters, 54 (11). 1016-1018 doi:10.1063/1.100784
Won, T., Agarwala, S., Morkoç, H. (1988) In0.52Al0.48As/In0.53Ga0.47As heterojunction bipolar transistor on GaAs by molecular beam epitaxy. Applied Physics Letters, 53 (23). 2311-2313 doi:10.1063/1.100263
Kalem, Seref, Chyi, Jen‐Inn, Morkoç, Hadis, Bean, Ross, Zanio, Ken (1988) Growth and transport properties of InAs epilayers on GaAs. Applied Physics Letters, 53 (17). 1647-1649 doi:10.1063/1.99938
Yen, M. Y. (1988) Molecular‐beam epitaxial growth and electrical properties of lattice mismatched InAs1−xSbxon (100) GaAs. Journal of Applied Physics, 64 (6). 3306-3309 doi:10.1063/1.342492
Won, T., Munns, G., Unlu, M. S., Unlu, H., Chyi, J., Morkoç, H. (1987) Characteristics ofp‐GaAs/n‐Si heterojunctions grown by molecular‐beam epitaxy. Journal of Applied Physics, 62 (9). 3860-3865 doi:10.1063/1.339230
Huang, D., Agarwala, S., Morkoç, H. (1989) Photoluminescence studies of GaAs grown on InP substrates by molecular beam epitaxy. Applied Physics Letters, 54 (1). 51-53 doi:10.1063/1.100832
Kiely, C. J., Chyi, J. I., Rockett, A., Morkoç, H. (1989) On the microstructure and interfacial structure of InSb layers grown on GaAs(100) by molecular beam epitaxy. Philosophical Magazine A, 60 (3). 321-337 doi:10.1080/01418618908213865
Williams, G. M., Whitehouse, C. R., McConville, C. F., Cullis, A. G., Ashley, T., Courtney, S. J., Elliott, C. T. (1988) Heteroepitaxial growth of InSb on (100)GaAs using molecular beam epitaxy. Applied Physics Letters, 53 (13). 1189-1191 doi:10.1063/1.100405
Bloch, J., Heiblum, M., Komem, Y. (1985) Growth of molybdenum and tungsten on GaAs in a molecular beam epitaxy system. Applied Physics Letters, 46 (11). 1092-1094 doi:10.1063/1.95772
Agarwala, S., Won, T., Morkoç, H. (1989) AlGaAs/GaAs single heterojunction bipolar transistors grown on InP by molecular beam epitaxy. Applied Physics Letters, 54 (12). 1151-1153 doi:10.1063/1.100745
 
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