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Hua, B. Y., Fortin, E., Roth, A. P., Masut, R. A. (1988) Photovoltaic spectroscopy of InGaAs/GaAs superlattices. Applied Physics Letters, 53 (12). 1062-1064 doi:10.1063/1.100066

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Reference TypeJournal (article/letter/editorial)
TitlePhotovoltaic spectroscopy of InGaAs/GaAs superlattices
JournalApplied Physics Letters
AuthorsHua, B. Y.Author
Fortin, E.Author
Roth, A. P.Author
Masut, R. A.Author
Year1988 (September 19)Volume53
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.100066Search in ResearchGate
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Mindat Ref. ID8484186Long-form Identifiermindat:1:5:8484186:3
GUID0
Full ReferenceHua, B. Y., Fortin, E., Roth, A. P., Masut, R. A. (1988) Photovoltaic spectroscopy of InGaAs/GaAs superlattices. Applied Physics Letters, 53 (12). 1062-1064 doi:10.1063/1.100066
Plain TextHua, B. Y., Fortin, E., Roth, A. P., Masut, R. A. (1988) Photovoltaic spectroscopy of InGaAs/GaAs superlattices. Applied Physics Letters, 53 (12). 1062-1064 doi:10.1063/1.100066
In(1988, September) Applied Physics Letters Vol. 53 (12) AIP Publishing

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Fortin, E., Hua, B. Y., Roth, A. P., Charlebois, A., Fafard, S., Lacelle, C. (1989) Luminescence, level saturation, and optical gain in a single InGaAs/GaAs quantum well. Journal of Applied Physics, 66 (10). 4854-4857 doi:10.1063/1.343802
Fortin, E., Hua, B. Y., Roth, A. P. (1989) Electro-optical effects inInxGa1−xAs/GaAs strained-layer superlattices. Physical Review B, 39 (15) 10887-10891 doi:10.1103/physrevb.39.10887
Fritz, I. J., Gourley, P. L., Dawson, L. R., Schirber, J. E. (1988) Electrical and optical studies of dislocation filtering in InGaAs/GaAs strained‐layer superlattices. Applied Physics Letters, 53 (12). 1098-1100 doi:10.1063/1.100032
Roth, A. P., Sacilotti, M., Masut, R. A., D’Arcy, P. J., Watt, B., Sproule, G. I., Mitchell, D. F. (1986) GaInAs/GaAs strained‐layer superlattices grown by low pressure metalorganic vapor phase epitaxy. Applied Physics Letters, 48 (21). 1452-1454 doi:10.1063/1.96887
Iikawa, F., Cerdeira, F., Vazquez-Lopez, C., Motisuke, P., Sacilotti, M. A., Roth, A. P., Masut, R. A. (1988) Optical studies inInxGa1−xAs/GaAs strained-layer superlattices. Physical Review B, 38 (12) 8473-8476 doi:10.1103/physrevb.38.8473
Sacilotti, M., Masut, R. A., Roth, A. P. (1986) Stabilization of InP substrate under annealing in the presence of GaAs. Applied Physics Letters, 48 (7). 481-483 doi:10.1063/1.96536
Morris, D., Roth, A. P., Masut, R. A., Lacelle, C., Brebner, J. L. (1988) Photoluminescence study of strain relaxation in Ga1−xInxAs/GaAs single heterostructures. Journal of Applied Physics, 64 (8). 4135-4140 doi:10.1063/1.341324
Fortin, E., Charbonneau, S., Meikle, S., Roth, A. P. (1984) Photovoltaic study of the substrate‐layer interface for Sn‐doped GaAs grown by metalorganic vapor phase epitaxy. Journal of Applied Physics, 56 (4). 1141-1144 doi:10.1063/1.334088
Gal, M., Orders, P. J., Usher, B. F., Joyce, M. J., Tann, J. (1988) Observation of compressive and tensile strains in InGaAs/GaAs by photoluminescence spectroscopy. Applied Physics Letters, 53 (2). 113-115 doi:10.1063/1.100385
Peng, C. K., Ji, G., Kumar, N. S., Morkoç, H. (1988) Extremely low resistance nonalloyed ohmic contacts on GaAs using InAs/InGaAs and InAs/GaAs strained‐layer superlattices. Applied Physics Letters, 53 (10). 900-901 doi:10.1063/1.100109
Katz, A., Alfano, R. R. (1988) Intervalley scattering rates in GaAs measured by time‐resolved four‐wave mixing spectroscopy. Applied Physics Letters, 53 (12). 1065-1067 doi:10.1063/1.100067
 
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