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Asom, M. T., Benton, J. L., Sauer, R., Kimerling, L. C. (1987) Interstitial defect reactions in silicon. Applied Physics Letters, 51 (4). 256-258 doi:10.1063/1.98465

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Reference TypeJournal (article/letter/editorial)
TitleInterstitial defect reactions in silicon
JournalApplied Physics Letters
AuthorsAsom, M. T.Author
Benton, J. L.Author
Sauer, R.Author
Kimerling, L. C.Author
Year1987 (July 27)Volume51
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.98465Search in ResearchGate
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Mindat Ref. ID8482020Long-form Identifiermindat:1:5:8482020:4
GUID0
Full ReferenceAsom, M. T., Benton, J. L., Sauer, R., Kimerling, L. C. (1987) Interstitial defect reactions in silicon. Applied Physics Letters, 51 (4). 256-258 doi:10.1063/1.98465
Plain TextAsom, M. T., Benton, J. L., Sauer, R., Kimerling, L. C. (1987) Interstitial defect reactions in silicon. Applied Physics Letters, 51 (4). 256-258 doi:10.1063/1.98465
In(1987, July) Applied Physics Letters Vol. 51 (4) AIP Publishing

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Sauer, R., Asom, M., People, R., Lang, D. V., Kimerling, L. C., Bean, J. C. (1987) New photoluminescence defect at 1.0192 eV in silicon molecular beam epitaxy layers ascribed to Cu. Applied Physics Letters, 51 (15). 1185-1187 doi:10.1063/1.98727
Kimerling, Lionel C., Asom, M.T., Benton, J.L., Drevinsky, P.J., Caefer, C.E. (1991) Interstitial Defect Reactions in Silicon. Materials Science Forum, 38. 141-150 doi:10.4028/www.scientific.net/msf.38-41.141
Asom, M. T., Parsey, J. M., Kimerling, L. C., Sauer, R., Thiel, F. A. (1988) Changes in the electronic properties of bulk GaAs by thermal annealing. Applied Physics Letters, 52 (18). 1472-1474 doi:10.1063/1.99102
Levinson, M., Benton, J. L., Temkin, H., Kimerling, L. C. (1982) Defect states in electron bombardedn‐InP. Applied Physics Letters, 40 (11). 990-992 doi:10.1063/1.92953
Benton, J. L., Levinson, M., Macrander, A. T., Temkin, H., Kimerling, L. C. (1984) Recombination enhanced defect annealing inn‐InP. Applied Physics Letters, 45 (5). 566-568 doi:10.1063/1.95282
Kimerling, L. C., Benton, J. L. (1981) Oxygen‐related donor states in silicon. Applied Physics Letters, 39 (5). 410-412 doi:10.1063/1.92755
Chantre, A., Benton, J.L., Asom, M.T., Kimerling, Lionel C. (1986) New Impurity-Defect Reactions in Silicon. Materials Science Forum, 10. 1111-1116 doi:10.4028/www.scientific.net/msf.10-12.1111
Asom, M. T., Kortan, A. R., Kimerling, L. C., Farrow, R. C. (1989) Structure and stability of metastable α‐Sn. Applied Physics Letters, 55 (14). 1439-1441 doi:10.1063/1.101580
Kimerling, L. C., Patel, J. R. (1979) Defect states associated with dislocations in silicon. Applied Physics Letters, 34 (1). 73-75 doi:10.1063/1.90563
Asom, M. T., Fitzgerald, E. A., Kortan, A. R., Spear, B., Kimerling, L. C. (1989) Epitaxial growth of metastable SnGe alloys. Applied Physics Letters, 55 (6). 578-579 doi:10.1063/1.101838
Benton, J. L., Doherty, C. J., Ferris, S. D., Flamm, D. L., Kimerling, L. C., Leamy, H. J. (1980) Hydrogen passivation of point defects in silicon. Applied Physics Letters, 36 (8). 670-671 doi:10.1063/1.91619
 
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