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Asom, M. T., Parsey, J. M., Kimerling, L. C., Sauer, R., Thiel, F. A. (1988) Changes in the electronic properties of bulk GaAs by thermal annealing. Applied Physics Letters, 52 (18). 1472-1474 doi:10.1063/1.99102

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Reference TypeJournal (article/letter/editorial)
TitleChanges in the electronic properties of bulk GaAs by thermal annealing
JournalApplied Physics Letters
AuthorsAsom, M. T.Author
Parsey, J. M.Author
Kimerling, L. C.Author
Sauer, R.Author
Thiel, F. A.Author
Year1988 (May 2)Volume52
Issue18
PublisherAIP Publishing
DOIdoi:10.1063/1.99102Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8482910Long-form Identifiermindat:1:5:8482910:8
GUID0
Full ReferenceAsom, M. T., Parsey, J. M., Kimerling, L. C., Sauer, R., Thiel, F. A. (1988) Changes in the electronic properties of bulk GaAs by thermal annealing. Applied Physics Letters, 52 (18). 1472-1474 doi:10.1063/1.99102
Plain TextAsom, M. T., Parsey, J. M., Kimerling, L. C., Sauer, R., Thiel, F. A. (1988) Changes in the electronic properties of bulk GaAs by thermal annealing. Applied Physics Letters, 52 (18). 1472-1474 doi:10.1063/1.99102
In(1988, May) Applied Physics Letters Vol. 52 (18) AIP Publishing

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Asom, M. T., Benton, J. L., Sauer, R., Kimerling, L. C. (1987) Interstitial defect reactions in silicon. Applied Physics Letters, 51 (4). 256-258 doi:10.1063/1.98465
Kimerling, Lionel C., Asom, M.T., Thiel, F.A., Parsey, J.M. (1991) Nonstoichiometry Related Acceptors in GaAs. Materials Science Forum, 38. 945-950 doi:10.4028/www.scientific.net/msf.38-41.945
Harris, T. D., Skolnick, M. S., Parsey, J. M., Bhat, R. (1988) Donor identification in bulk gallium arsenide. Applied Physics Letters, 52 (5). 389-391 doi:10.1063/1.99475
Asom, M. T., Kortan, A. R., Kimerling, L. C., Farrow, R. C. (1989) Structure and stability of metastable α‐Sn. Applied Physics Letters, 55 (14). 1439-1441 doi:10.1063/1.101580
Sauer, R., Asom, M., People, R., Lang, D. V., Kimerling, L. C., Bean, J. C. (1987) New photoluminescence defect at 1.0192 eV in silicon molecular beam epitaxy layers ascribed to Cu. Applied Physics Letters, 51 (15). 1185-1187 doi:10.1063/1.98727
Asom, M. T., Fitzgerald, E. A., Kortan, A. R., Spear, B., Kimerling, L. C. (1989) Epitaxial growth of metastable SnGe alloys. Applied Physics Letters, 55 (6). 578-579 doi:10.1063/1.101838
Gray, M. L., Abemathy, C. R., Caruso, R., Jordan, A. S., Parsey, J. M. (1988) Surface polygonization on GaAs wafers. Journal of Applied Physics, 64 (3). 1468-1471 doi:10.1063/1.341819
Gray, M. L., Parsey, J. M. (1989) The impact of various annealing methods on silicon implant activation properties for GaAs crystals. Journal of Applied Physics, 66 (1). 137-140 doi:10.1063/1.343892
Gray, M. L., Parsey, J. M., Pearton, S. J., Short, K. T., Ahrens, R. E., Sargent, L., Blakemore, J. S. (1988) The role of crystal‐growth properties on silicon implant activation processes for GaAs. Journal of Applied Physics, 64 (3). 1464-1467 doi:10.1063/1.341818
Chou, H., Chen, H. S., Kortan, A. R., Kimerling, L. C., Thiel, F. A., Wu, M. K. (1991) Processing of a TlBa2Ca2Cu3Oysuperconducting film by liquid‐gas solidification. Applied Physics Letters, 58 (24). 2836-2838 doi:10.1063/1.104751
Benton, J. L., Levinson, M., Macrander, A. T., Temkin, H., Kimerling, L. C. (1984) Recombination enhanced defect annealing inn‐InP. Applied Physics Letters, 45 (5). 566-568 doi:10.1063/1.95282
 
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