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Fuchs, F., Dischler, B. (1987) Infrared studies of the dynamics of transformations between normal and metastable state of the EL2 center in GaAs. Applied Physics Letters, 51 (9). 679-681 doi:10.1063/1.98332

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Reference TypeJournal (article/letter/editorial)
TitleInfrared studies of the dynamics of transformations between normal and metastable state of the EL2 center in GaAs
JournalApplied Physics Letters
AuthorsFuchs, F.Author
Dischler, B.Author
Year1987 (August 31)Volume51
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.98332Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8482324Long-form Identifiermindat:1:5:8482324:7
GUID0
Full ReferenceFuchs, F., Dischler, B. (1987) Infrared studies of the dynamics of transformations between normal and metastable state of the EL2 center in GaAs. Applied Physics Letters, 51 (9). 679-681 doi:10.1063/1.98332
Plain TextFuchs, F., Dischler, B. (1987) Infrared studies of the dynamics of transformations between normal and metastable state of the EL2 center in GaAs. Applied Physics Letters, 51 (9). 679-681 doi:10.1063/1.98332
In(1987, August) Applied Physics Letters Vol. 51 (9) AIP Publishing

See Also

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Fuchs, F., Dischler, B. (1987) Resolved structure in the quenching band of the EL2 center in GaAs, studied by infrared spectroscopy. Applied Physics Letters, 51 (25). 2115-2117 doi:10.1063/1.98964
Dischler, B., Fuchs, F., Kaufmann, U. (1986) Photoresponse of the EL2 absorption in undoped semiā€insulating GaAs. Applied Physics Letters, 48 (19). 1282-1284 doi:10.1063/1.97004
Sugiyama, Toshinobu, Tanimura, Katsumi, Itoh, Noriaki (1989) Recombinationā€induced metastable to stable transformation of the EL2 center in GaAs. Applied Physics Letters, 55 (7). 639-641 doi:10.1063/1.101809
Dischler, B., Fuchs, Franziska, Kaufmann, Ulrich (1986) Infrared Investigations of Persistent Carriers, Photo-Generated during EL2 Bleaching in GaAs. Materials Science Forum, 10. 359-364 doi:10.4028/www.scientific.net/msf.10-12.359
Kabiraj, D., Ghosh, Subhasis (2005) ā€œEL2ā€ revisited: Observation of metastable and stable energy levels of EL2 in semi-insulating GaAs. Applied Physics Letters, 87 (25). 252118pp. doi:10.1063/1.2150579
Matsui, Masayoshi, Kazuno, Tadao (1987) Abnormal outdiffusion behavior of the deep level EL2 at the surface layer of undoped semiā€insulating GaAs. Applied Physics Letters, 51 (9). 658-660 doi:10.1063/1.98325
Bourgoin, J. C., Neffati, T. (1997) Detection of the metastable state of the EL2 defect in GaAs. Journal of Applied Physics, 82 (8). 4124-4125 doi:10.1063/1.365724
Alvarez, A., JimĆ©nez, J., GonzĆ”lez, M. A. (1996) Metastable transformation of EL2 in semiā€insulating GaAs: The role of the actuator level and the photoionization of EL2. Applied Physics Letters, 68 (21). 2959-2961 doi:10.1063/1.116368
Schneider, Harald, Fuchs, Frank, Dischler, Bernhard, Ralston, John D., Koidl, Peter (1991) Intersubband absorption and infrared photodetection at 3.5 and 4.2 Ī¼m in GaAs quantum wells. Applied Physics Letters, 58 (20). 2234-2236 doi:10.1063/1.104936
BAGRAEV, N.T. (1991) SYMMETRY OF THE EL2 CENTER IN GaAs. Modern Physics Letters B, 5. 1925-1931 doi:10.1142/s0217984991002318
von Bardeleben, H. J., Bagraev, N. T., Bourgoin, J. C. (1987) Optically induced regeneration of the stable configuration of the EL2 defect in GaAs. Applied Physics Letters, 51 (18). 1451-1453 doi:10.1063/1.98654
 
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