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Vu, D. P., Pfister, J. C. (1988) Characterization of beam‐recrystallized Si films and their Si/SiO2interfaces in silicon‐on‐insulator structures: The very thin Si film case. Applied Physics Letters, 52 (1). 45-47 doi:10.1063/1.99312

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Reference TypeJournal (article/letter/editorial)
TitleCharacterization of beam‐recrystallized Si films and their Si/SiO2interfaces in silicon‐on‐insulator structures: The very thin Si film case
JournalApplied Physics Letters
AuthorsVu, D. P.Author
Pfister, J. C.Author
Year1988 (January 4)Volume52
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.99312Search in ResearchGate
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Mindat Ref. ID8482373Long-form Identifiermindat:1:5:8482373:3
GUID0
Full ReferenceVu, D. P., Pfister, J. C. (1988) Characterization of beam‐recrystallized Si films and their Si/SiO2interfaces in silicon‐on‐insulator structures: The very thin Si film case. Applied Physics Letters, 52 (1). 45-47 doi:10.1063/1.99312
Plain TextVu, D. P., Pfister, J. C. (1988) Characterization of beam‐recrystallized Si films and their Si/SiO2interfaces in silicon‐on‐insulator structures: The very thin Si film case. Applied Physics Letters, 52 (1). 45-47 doi:10.1063/1.99312
In(1988, January) Applied Physics Letters Vol. 52 (1) AIP Publishing

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Vu, D. P., Pfister, J. C. (1986) Characterization of beam‐recrystallized Si films and their Si/SiO2interfaces in silicon‐on‐insulator structures. Applied Physics Letters, 48 (1). 50-52 doi:10.1063/1.96759
Vu, D. P., Pfister, J. C. (1985) Determination of minority‐carrier generation lifetime in beam‐recrystallized silicon‐on‐insulator structure by using a depletion‐mode transistor. Applied Physics Letters, 47 (9). 950-952 doi:10.1063/1.95939
Carlos, W. E. (1987) Paramagnetic centers at Si‐SiO2interfaces in silicon‐on‐insulator films. Applied Physics Letters, 50 (20). 1450-1452 doi:10.1063/1.97798
Crowder, S. W., Hsieh, C. J., Griffin, P. B., Plummer, J. D. (1994) Effect of buried Si‐SiO2interfaces on oxidation and implant‐enhanced dopant diffusion in thin silicon‐on‐insulator films. Journal of Applied Physics, 76 (5). 2756-2764 doi:10.1063/1.357539
Liao, C. N., Chen, C., Tu, K. N. (1999) Thermoelectric characterization of Si thin films in silicon-on-insulator wafers. Journal of Applied Physics, 86 (6). 3204-3208 doi:10.1063/1.371190
Ogura, Atsushi, Aizaki, Naoaki (1989) Si/SiO2interface structures in laser‐recrystallized Si on SiO2. Applied Physics Letters, 55 (6). 547-549 doi:10.1063/1.102433
Mathiot, D., Pfister, J. C. (1985) Evidences that P diffusion in Si is assisted mainly by vacancies. Applied Physics Letters, 47 (9). 962-964 doi:10.1063/1.95944
Nakane, Ryosho, Tanaka, Masaaki, Sugahara, Satoshi (2006) Preparation and characterization of ferromagnetic DO3-phase Fe3Si thin films on silicon-on-insulator substrates for Si-based spin-electronic device applications. Applied Physics Letters, 89 (19). 192503pp. doi:10.1063/1.2378487
Tsaur, B‐Y., Fan, John C. C., Turner, G. W., Geis, M. W., Silversmith, D. J., Mountain, R. W. (1983) Thin‐film transistors fabricated in solid‐phase‐recrystallized Si films on fused silica substrates. Journal of Applied Physics, 54 (2). 1151-1153 doi:10.1063/1.332088
Glastre, G., Rosencher, E., d’Avitaya, F. Arnaud, Puissant, C., Pons, M., Vincent, G., Pfister, J. C. (1988) CoSi2and Si epitaxial growth in 〈111〉 Si submicron lines with application to a permeable base transistor. Applied Physics Letters, 52 (11). 898-900 doi:10.1063/1.99266
Lin, T. L., Chen, S. C., Kao, Y. C., Wang, K. L., Iyer, S. (1986) 100‐μm‐wide silicon‐on‐insulator structures by Si molecular beam epitaxy growth on porous silicon. Applied Physics Letters, 48 (26). 1793-1795 doi:10.1063/1.96789
 
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