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Nishioka, Yasushiro, da Silva, Eronides F., Ma, T. P. (1988) Equivalence between interface traps in SiO2/Si generated by radiation damage and hot‐electron injection. Applied Physics Letters, 52 (9). 720-722 doi:10.1063/1.99358

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Reference TypeJournal (article/letter/editorial)
TitleEquivalence between interface traps in SiO2/Si generated by radiation damage and hot‐electron injection
JournalApplied Physics Letters
AuthorsNishioka, YasushiroAuthor
da Silva, Eronides F.Author
Ma, T. P.Author
Year1988 (February 29)Volume52
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.99358Search in ResearchGate
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Mindat Ref. ID8483927Long-form Identifiermindat:1:5:8483927:5
GUID0
Full ReferenceNishioka, Yasushiro, da Silva, Eronides F., Ma, T. P. (1988) Equivalence between interface traps in SiO2/Si generated by radiation damage and hot‐electron injection. Applied Physics Letters, 52 (9). 720-722 doi:10.1063/1.99358
Plain TextNishioka, Yasushiro, da Silva, Eronides F., Ma, T. P. (1988) Equivalence between interface traps in SiO2/Si generated by radiation damage and hot‐electron injection. Applied Physics Letters, 52 (9). 720-722 doi:10.1063/1.99358
In(1988, February) Applied Physics Letters Vol. 52 (9) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Nishioka, Yasushiro, da Silva, Eronides F., Ma, T.‐P. (1988) Time‐dependent evolution of SiO2/Si interface traps after repeated radiation damage. Journal of Applied Physics, 64 (6). 3317-3319 doi:10.1063/1.341510
da Silva, Eronides F., Nishioka, Yasushiro, Ma, T.‐P. (1987) Effects of trichloroethane during oxide growth on radiation‐induced interface traps in Metal/SiO2/Si capacitors. Applied Physics Letters, 51 (16). 1262-1264 doi:10.1063/1.98699
da Silva, Eronides F., Nishioka, Yasushiro, Ma, T.‐P. (1987) Two distinct interface trap peaks in radiation‐damaged metal/SiO2/Si structures. Applied Physics Letters, 51 (4). 270-272 doi:10.1063/1.98470
Nishioka, Yasushiro, da Silva, Eronides F., Ma, T.-P. (1987) Radiation-Induced Interface Traps in Mo/SiO2/Si Capacitors. IEEE Transactions on Nuclear Science, 34 (6) 1166-1171 doi:10.1109/tns.1987.4337447
Wang, Xie W., Wang, Yu, Nishioka, Yasushiro, da Silva, Eronides F., Ma, T. P. (1988) Radiation‐induced enhancement of minority‐carrier lifetimes in metal/SiO2/Si capacitors having oxides grown in O2with trichloroethane additive. Applied Physics Letters, 53 (7). 592-594 doi:10.1063/1.99866
Nishioka, Yasushiro, Ma, T. P. (1988) Interface traps at midgap during defect transformation in (100) Si/SiO2. Applied Physics Letters, 53 (18). 1744-1746 doi:10.1063/1.99776
Wang, Yu, Nishioka, Yasushiro, Ma, T. P., Barker, R. C. (1988) Radiation and hot‐electron effects on SiO2/Si interfaces with oxides grown in O2containing small amounts of trichloroethane. Applied Physics Letters, 52 (7). 573-575 doi:10.1063/1.99397
da Silva, Eronides F., Nishioka, Yasushiro, Ma, T.-P. (1987) Radiation Response of MOS Capacitors Containing Fluorinated Oxides. IEEE Transactions on Nuclear Science, 34 (6) 1190-1195 doi:10.1109/tns.1987.4337451
Zekeriya, Viktor, Ma, T. P. (1983) Interface traps generated by internal photoemission in Al‐SiO2‐Si structures. Applied Physics Letters, 43 (1). 95-97 doi:10.1063/1.94135
Hook, Terence B., Ma, T. P. (1986) Hot‐electron induced interface traps in metal/SiO2/Si capacitors: The effect of gate‐induced strain. Applied Physics Letters, 48 (18). 1208-1210 doi:10.1063/1.96983
Chin, M. R., Ma, T. P. (1983) Gate‐width dependence of radiation‐induced interface traps in metal/SiO2/Si devices. Applied Physics Letters, 42 (10). 883-885 doi:10.1063/1.93774
 
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