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Nishioka, Yasushiro, Ma, T. P. (1988) Interface traps at midgap during defect transformation in (100) Si/SiO2. Applied Physics Letters, 53 (18). 1744-1746 doi:10.1063/1.99776

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Reference TypeJournal (article/letter/editorial)
TitleInterface traps at midgap during defect transformation in (100) Si/SiO2
JournalApplied Physics Letters
AuthorsNishioka, YasushiroAuthor
Ma, T. P.Author
Year1988 (October 31)Volume53
Issue18
PublisherAIP Publishing
DOIdoi:10.1063/1.99776Search in ResearchGate
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Mindat Ref. ID8484605Long-form Identifiermindat:1:5:8484605:3
GUID0
Full ReferenceNishioka, Yasushiro, Ma, T. P. (1988) Interface traps at midgap during defect transformation in (100) Si/SiO2. Applied Physics Letters, 53 (18). 1744-1746 doi:10.1063/1.99776
Plain TextNishioka, Yasushiro, Ma, T. P. (1988) Interface traps at midgap during defect transformation in (100) Si/SiO2. Applied Physics Letters, 53 (18). 1744-1746 doi:10.1063/1.99776
In(1988, October) Applied Physics Letters Vol. 53 (18) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Nishioka, Yasushiro, da Silva, Eronides F., Ma, T. P. (1988) Equivalence between interface traps in SiO2/Si generated by radiation damage and hot‐electron injection. Applied Physics Letters, 52 (9). 720-722 doi:10.1063/1.99358
da Silva, Eronides F., Nishioka, Yasushiro, Ma, T.‐P. (1987) Effects of trichloroethane during oxide growth on radiation‐induced interface traps in Metal/SiO2/Si capacitors. Applied Physics Letters, 51 (16). 1262-1264 doi:10.1063/1.98699
Nishioka, Yasushiro, da Silva, Eronides F., Ma, T.‐P. (1988) Time‐dependent evolution of SiO2/Si interface traps after repeated radiation damage. Journal of Applied Physics, 64 (6). 3317-3319 doi:10.1063/1.341510
da Silva, Eronides F., Nishioka, Yasushiro, Ma, T.‐P. (1987) Two distinct interface trap peaks in radiation‐damaged metal/SiO2/Si structures. Applied Physics Letters, 51 (4). 270-272 doi:10.1063/1.98470
Nishioka, Yasushiro, da Silva, Eronides F., Ma, T.-P. (1987) Radiation-Induced Interface Traps in Mo/SiO2/Si Capacitors. IEEE Transactions on Nuclear Science, 34 (6) 1166-1171 doi:10.1109/tns.1987.4337447
Wang, Xie W., Wang, Yu, Nishioka, Yasushiro, da Silva, Eronides F., Ma, T. P. (1988) Radiation‐induced enhancement of minority‐carrier lifetimes in metal/SiO2/Si capacitors having oxides grown in O2with trichloroethane additive. Applied Physics Letters, 53 (7). 592-594 doi:10.1063/1.99866
Wang, Yu, Nishioka, Yasushiro, Ma, T. P., Barker, R. C. (1988) Radiation and hot‐electron effects on SiO2/Si interfaces with oxides grown in O2containing small amounts of trichloroethane. Applied Physics Letters, 52 (7). 573-575 doi:10.1063/1.99397
Hook, Terence B., Ma, T. P. (1986) Hot‐electron induced interface traps in metal/SiO2/Si capacitors: The effect of gate‐induced strain. Applied Physics Letters, 48 (18). 1208-1210 doi:10.1063/1.96983
Zekeriya, Viktor, Ma, T. P. (1983) Interface traps generated by internal photoemission in Al‐SiO2‐Si structures. Applied Physics Letters, 43 (1). 95-97 doi:10.1063/1.94135
Nishioka, Yasushiro, Ohji, Yuzuru, Mukai, Kiichiro, Sugano, Takuo, Wang, Yu, Ma, T. P. (1989) Dielectric characteristics of fluorinated ultradry SiO2. Applied Physics Letters, 54 (12). 1127-1129 doi:10.1063/1.101479
Vishnubhotla, Lakshmanna, Ma, T. P. (1992) Energy shift of (100)Si/SiO2 interface traps resulting from avalanche hole injection. Journal of Applied Physics, 71 (2). 1058-1060 doi:10.1063/1.350399
 
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