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Nishioka, Yasushiro, Ohji, Yuzuru, Mukai, Kiichiro, Sugano, Takuo, Wang, Yu, Ma, T. P. (1989) Dielectric characteristics of fluorinated ultradry SiO2. Applied Physics Letters, 54 (12). 1127-1129 doi:10.1063/1.101479

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Reference TypeJournal (article/letter/editorial)
TitleDielectric characteristics of fluorinated ultradry SiO2
JournalApplied Physics Letters
AuthorsNishioka, YasushiroAuthor
Ohji, YuzuruAuthor
Mukai, KiichiroAuthor
Sugano, TakuoAuthor
Wang, YuAuthor
Ma, T. P.Author
Year1989 (March 20)Volume54
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.101479Search in ResearchGate
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Mindat Ref. ID8486058Long-form Identifiermindat:1:5:8486058:5
GUID0
Full ReferenceNishioka, Yasushiro, Ohji, Yuzuru, Mukai, Kiichiro, Sugano, Takuo, Wang, Yu, Ma, T. P. (1989) Dielectric characteristics of fluorinated ultradry SiO2. Applied Physics Letters, 54 (12). 1127-1129 doi:10.1063/1.101479
Plain TextNishioka, Yasushiro, Ohji, Yuzuru, Mukai, Kiichiro, Sugano, Takuo, Wang, Yu, Ma, T. P. (1989) Dielectric characteristics of fluorinated ultradry SiO2. Applied Physics Letters, 54 (12). 1127-1129 doi:10.1063/1.101479
In(1989, March) Applied Physics Letters Vol. 54 (12) AIP Publishing

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Nishioka, Yasushiro, Ohji, Yuzuru, Yoshida, Ikuo, Mukai, Kiichiro, Sugano, Takuo (1990) Effects of oxide‐trapped charges and interface trap generation in metal/oxide/semiconductor structures with ultradry oxides after Fowler–Nordheim stressing. Journal of Applied Physics, 67 (8). 3903-3905 doi:10.1063/1.344998
Nishioka, Yasushiro, Ohyu, Kiyonori, Ohji, Yuzuru, Natsuaki, Nobuyoshi, Mukai, Kiichiro, Ma, T. P. (1989) The effect of fluorine implantation on the interface radiation hardness of Si‐gate metal‐oxide‐semiconductor transistors. Journal of Applied Physics, 66 (8). 3909-3912 doi:10.1063/1.344012
Nishioka, Yasushiro, Shinriki, Hiroshi, Mukai, Kiichiro (1987) Influence of SiO2at the Ta2O5/Si interface on dielectric characteristics of Ta2O5capacitors. Journal of Applied Physics, 61 (6). 2335-2338 doi:10.1063/1.337945
Yu, Byoung‐gon, Arai, Eiichi, Nishioka, Yasushiro, Ohji, Yuzuru, Iwata, Seiichi, Ma, T. P. (1990) Investigation of fluorine in SiO2and on Si surface by the19F(p,αγ)16O reaction, secondary‐ion mass spectrometry, and x‐ray photoelectron spectroscopy. Applied Physics Letters, 56 (15). 1430-1432 doi:10.1063/1.103206
Nishioka, Yasushiro, Kato, Masataka, Ohji, Yuzuru, Ma, T. P. (1991) Time‐dependent changes of parasitic effects induced by high‐field electron injection in metal‐oxide‐semiconductor transistors. Journal of Applied Physics, 69 (1). 528-530 doi:10.1063/1.347700
Nishioka, Yasushiro, Ma, T. P. (1988) Interface traps at midgap during defect transformation in (100) Si/SiO2. Applied Physics Letters, 53 (18). 1744-1746 doi:10.1063/1.99776
Wang, Yu, Nishioka, Yasushiro, Ma, T. P., Barker, R. C. (1988) Radiation and hot‐electron effects on SiO2/Si interfaces with oxides grown in O2containing small amounts of trichloroethane. Applied Physics Letters, 52 (7). 573-575 doi:10.1063/1.99397
Wang, Xie W., Wang, Yu, Nishioka, Yasushiro, da Silva, Eronides F., Ma, T. P. (1988) Radiation‐induced enhancement of minority‐carrier lifetimes in metal/SiO2/Si capacitors having oxides grown in O2with trichloroethane additive. Applied Physics Letters, 53 (7). 592-594 doi:10.1063/1.99866
Yu, Byoung‐gon, Konuma, Naoki, Arai, Eiichi, Ohji, Yuzuru, Nishioka, Yasushiro (1991) Thermal behavior of fluorine in SiO2and Si investigated by the  19F(p,αγ) 16O reaction and secondary‐ion mass spectrometry. Journal of Applied Physics, 70 (4). 2408-2412 doi:10.1063/1.349392
da Silva, Eronides F., Nishioka, Yasushiro, Ma, T.‐P. (1987) Two distinct interface trap peaks in radiation‐damaged metal/SiO2/Si structures. Applied Physics Letters, 51 (4). 270-272 doi:10.1063/1.98470
Nishioka, Yasushiro, da Silva, Eronides F., Ma, T. P. (1988) Equivalence between interface traps in SiO2/Si generated by radiation damage and hot‐electron injection. Applied Physics Letters, 52 (9). 720-722 doi:10.1063/1.99358
 
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