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Judd, T. P. C., Pepper, M., Hill, G. (1988) Magnetophonon effect in GaAs Schottky gate field‐effect transistors. Applied Physics Letters, 53 (1). 54-56 doi:10.1063/1.100124

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Reference TypeJournal (article/letter/editorial)
TitleMagnetophonon effect in GaAs Schottky gate field‐effect transistors
JournalApplied Physics Letters
AuthorsJudd, T. P. C.Author
Pepper, M.Author
Hill, G.Author
Year1988 (July 4)Volume53
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.100124Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8483971Long-form Identifiermindat:1:5:8483971:6
GUID0
Full ReferenceJudd, T. P. C., Pepper, M., Hill, G. (1988) Magnetophonon effect in GaAs Schottky gate field‐effect transistors. Applied Physics Letters, 53 (1). 54-56 doi:10.1063/1.100124
Plain TextJudd, T. P. C., Pepper, M., Hill, G. (1988) Magnetophonon effect in GaAs Schottky gate field‐effect transistors. Applied Physics Letters, 53 (1). 54-56 doi:10.1063/1.100124
In(1988, July) Applied Physics Letters Vol. 53 (1) AIP Publishing

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Wang, G. W., Kaliski, R., Kuang, J. B. (1990) Misfit In0.18Ga0.82As/GaAs metal‐semiconductor field‐effect transistors with improved Schottky gate characteristics. Applied Physics Letters, 56 (20). 1995-1997 doi:10.1063/1.102997
Lee, C. P., Zucca, R., Welch, B. M. (1980) Orientation effect on planar GaAs Schottky barrier field effect transistors. Applied Physics Letters, 37 (3). 311-313 doi:10.1063/1.91917
Folkes, P. A. (1986) Characteristics and mechanism of 1/fnoise in GaAs Schottky barrier field‐effect transistors. Applied Physics Letters, 48 (5). 344-346 doi:10.1063/1.96546
Temkin, H., Chen, Y. K., Garbinski, P., Tanbun‐Ek, T., Logan, R. A. (1988) Insulating gate InGaAs/InP field‐effect transistors. Applied Physics Letters, 53 (25). 2534-2536 doi:10.1063/1.100200
Leonard, T. P., Bregman, J., Pepper, M., Davies, G. J., Scott, E. G. (1991) Characterization of insulated gate Ga0.47In0.53As/Al0.48In0.52As heterojunction field‐effect transistors. Journal of Applied Physics, 70 (9). 5090-5094 doi:10.1063/1.349017
Paquin, N., Pepper, M., Gundlach, A., Ruthven, A. (1988) Intrinsic stress in narrow silicon metal‐oxide‐semiconductor field‐effect transistors: Magnetotransport measurements. Applied Physics Letters, 53 (3). 198-200 doi:10.1063/1.100146
Rossel, P., Cabot, J. J., Graffeuil, J. (1974) Bistable switching on gallium arsenide Schottky gate field‐effect transistors. Applied Physics Letters, 25 (9). 510-511 doi:10.1063/1.1655569
Ruden, P. P., Han, C. J., Shur, M. (1988) Gate current of modulation‐doped field‐effect transistors. Journal of Applied Physics, 64 (3). 1541-1546 doi:10.1063/1.341830
Yokoyama, N., Onodera, H., Ohnishi, T., Shibatomi, A. (1983) Orientation effect of self‐aligned source/drain planar GaAs Schottky barrier field‐effect transistors. Applied Physics Letters, 42 (3). 270-271 doi:10.1063/1.93911
Chen, You‐jun, Dahlberg, E. Dan, Shur, M., Akinwande, A. (1990) Effect of a magnetic field on the gate current in heterostructure field‐effect transistors. Applied Physics Letters, 56 (20). 2028-2030 doi:10.1063/1.103007
McLaughlin, K. L., Birrittella, M. S. (1984) Preferential diffusion and orientation effects of Schottky barrier GaAs field‐effect transistors. Applied Physics Letters, 44 (2). 252-254 doi:10.1063/1.94688
 
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