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Temkin, H., Chen, Y. K., Garbinski, P., Tanbun‐Ek, T., Logan, R. A. (1988) Insulating gate InGaAs/InP field‐effect transistors. Applied Physics Letters, 53 (25). 2534-2536 doi:10.1063/1.100200

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Reference TypeJournal (article/letter/editorial)
TitleInsulating gate InGaAs/InP field‐effect transistors
JournalApplied Physics Letters
AuthorsTemkin, H.Author
Chen, Y. K.Author
Garbinski, P.Author
Tanbun‐Ek, T.Author
Logan, R. A.Author
Year1988 (December 19)Volume53
Issue25
PublisherAIP Publishing
DOIdoi:10.1063/1.100200Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8485172Long-form Identifiermindat:1:5:8485172:7
GUID0
Full ReferenceTemkin, H., Chen, Y. K., Garbinski, P., Tanbun‐Ek, T., Logan, R. A. (1988) Insulating gate InGaAs/InP field‐effect transistors. Applied Physics Letters, 53 (25). 2534-2536 doi:10.1063/1.100200
Plain TextTemkin, H., Chen, Y. K., Garbinski, P., Tanbun‐Ek, T., Logan, R. A. (1988) Insulating gate InGaAs/InP field‐effect transistors. Applied Physics Letters, 53 (25). 2534-2536 doi:10.1063/1.100200
In(1988, December) Applied Physics Letters Vol. 53 (25) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Temkin, H., Tanbun‐Ek, T., Logan, R. A. (1990) Strained InGaAs/InP quantum well lasers. Applied Physics Letters, 56 (13). 1210-1212 doi:10.1063/1.102562
Dutta, N. K., Temkin, H., Tanbun‐Ek, T., Logan, R. (1990) Linewidth enhancement factor for InGaAs/InP strained quantum well lasers. Applied Physics Letters, 57 (14). 1390-1391 doi:10.1063/1.103444
Temkin, H., Dutta, N. K., Tanbun‐Ek, T., Logan, R. A., Sergent, A. M. (1990) InGaAs/InP quantum well lasers with sub‐mA threshold current. Applied Physics Letters, 57 (16). 1610-1612 doi:10.1063/1.104085
Nottenburg, R. N., Chen, Y. K., Tanbun‐Ek, T., Logan, R. A., Humphrey, D. A. (1989) High performance InP/InGaAs heterostructure bipolar transistors grown by metalorganic vapor phase epitaxy. Applied Physics Letters, 55 (2). 171-172 doi:10.1063/1.102133
Temkin, H., Tanbun‐Ek, T., Logan, R. A., Lewis, J. A., Dutta, N. K. (1990) InGaAs/InP graded‐index quantum well lasers with nearly ideal static characteristics. Applied Physics Letters, 56 (13). 1222-1224 doi:10.1063/1.102521
Temkin, H., Tanbun‐Ek, T., Logan, R. A., Olsson, N. A., Sergent, M. A., Wecht, K. W., Cebula, D. A. (1990) InGaAs/InP distributed feedback quantum well laser. Applied Physics Letters, 57 (13). 1295-1297 doi:10.1063/1.103463
Fukushima, T., Bowers, J. E., Logan, R. A., Tanbun‐Ek, T., Temkin, H. (1991) Effect of strain on the resonant frequency and damping factor in InGaAs/InP multiple quantum well lasers. Applied Physics Letters, 58 (12). 1244-1246 doi:10.1063/1.104324
Lidgard, A., Tanbun‐Ek, T., Logan, R. A., Temkin, H., Wecht, K. W., Olsson, N. A. (1990) External‐cavity InGaAs/InP graded index multiquantum well laser with a 200 nm tuning range. Applied Physics Letters, 56 (9). 816-817 doi:10.1063/1.102672
Tanbun‐Ek, T., Temkin, H., Chu, S. N. G., Logan, R. A. (1989) Reproducible growth of low‐threshold single and multiple quantum well InGaAs/InP lasers by a novel interlayer growth technique. Applied Physics Letters, 55 (9). 819-821 doi:10.1063/1.101769
Ouacha, A., Chen, Q., Willander, M., Logan, R. A., Tanbun‐Ek, T. (1993) Recombination process and its effect on the dc performance of InP/InGaAs single‐heterojunction bipolar transistors. Journal of Applied Physics, 73 (9). 4444-4447 doi:10.1063/1.354070
Berthold, K., Levi, A. F. J., Tanbun‐Ek, T., Logan, R. A. (1990) Wavelength switching in InGaAs/InP quantum well lasers. Applied Physics Letters, 56 (2). 122-124 doi:10.1063/1.103048
 
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