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Shan, W., Li, M. F., Yu, P. Y., Hansen, W. L., Walukiewicz, W. (1988) Pressure dependence of Schottky barrier height at the Pt/GaAs interface. Applied Physics Letters, 53 (11). 974-976 doi:10.1063/1.100045

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Reference TypeJournal (article/letter/editorial)
TitlePressure dependence of Schottky barrier height at the Pt/GaAs interface
JournalApplied Physics Letters
AuthorsShan, W.Author
Li, M. F.Author
Yu, P. Y.Author
Hansen, W. L.Author
Walukiewicz, W.Author
Year1988 (September 12)Volume53
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.100045Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8484080Long-form Identifiermindat:1:5:8484080:0
GUID0
Full ReferenceShan, W., Li, M. F., Yu, P. Y., Hansen, W. L., Walukiewicz, W. (1988) Pressure dependence of Schottky barrier height at the Pt/GaAs interface. Applied Physics Letters, 53 (11). 974-976 doi:10.1063/1.100045
Plain TextShan, W., Li, M. F., Yu, P. Y., Hansen, W. L., Walukiewicz, W. (1988) Pressure dependence of Schottky barrier height at the Pt/GaAs interface. Applied Physics Letters, 53 (11). 974-976 doi:10.1063/1.100045
In(1988, September) Applied Physics Letters Vol. 53 (11) AIP Publishing

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Shan, W., Li, Ming Fu, Yu, P.Y., Walukiewicz, W., Hansen, W.L. (1991) Pressure Dependence of Schottky Barrier Height at Pt/GaAs Interface. Materials Science Forum, 38. 1427-1432 doi:10.4028/www.scientific.net/msf.38-41.1427
Li, M. F., Shan, W., Yu, P. Y., Hansen, W. L., Weber, E. R., Bauser, E. (1988) Pressure dependence of theDXcenter in Ga1−xAlxAs:Te in the vicinity of the Γ‐Xcrossover. Applied Physics Letters, 53 (13). 1195-1197 doi:10.1063/1.100017
HĂŒbers, H.-W., Röser, H. P. (1998) Temperature dependence of the barrier height of Pt/n-GaAs Schottky diodes. Journal of Applied Physics, 84 (9). 5326-5330 doi:10.1063/1.368781
Shan, W., Yu, P. Y., Li, M. F., Hansen, W. L., Bauser, E. (1989) Pressure dependence of theDXcenter inGa1−xAlxAs:Te. Physical Review B, 40 (11) 7831-7838 doi:10.1103/physrevb.40.7831
Chen, C.‐P., Chang, Y. A., Huang, J.‐W., Kuech, T. F. (1994) High Schottky barrier height of the Al/n‐GaAs diodes achieved by sputter deposition. Applied Physics Letters, 64 (11). 1413-1415 doi:10.1063/1.111900
Shan, W., Walukiewicz, W., Ager, J. W., Yu, K. M., Wu, J., Haller, E. E. (2004) Pressure dependence of the fundamental band-gap energy of CdSe. Applied Physics Letters, 84 (1). 67-69 doi:10.1063/1.1638879
Waldrop, J. R., Grant, R. W. (1988) Metal contacts to GaAs with 1 eV Schottky barrier height. Applied Physics Letters, 52 (21). 1794-1796 doi:10.1063/1.99628
Broom, R. F., Meier, H. P., Walter, W. (1986) Doping dependence of the Schottky‐barrier height of Ti‐Pt contacts ton‐gallium arsenide. Journal of Applied Physics, 60 (5). 1832-1833 doi:10.1063/1.337226
Dong, Y. F., Wang, S. J., Chai, J. W., Feng, Y. P., Huan, A. C. H. (2005) Impact of interface structure on Schottky-barrier height for Ni∕ZrO2(001) interfaces. Applied Physics Letters, 86 (13). 132103pp. doi:10.1063/1.1891285
Uebbing, John J., Bell, Ronald L. (1967) CESIUM‐GaAs SCHOTTKY BARRIER HEIGHT. Applied Physics Letters, 11 (11). 357-358 doi:10.1063/1.1755013
Shan, W., Walukiewicz, W., Ager, J. W., Yu, K. M., Zhang, Y., Mao, S. S., Kling, R., Kirchner, C., Waag, A. (2005) Pressure-dependent photoluminescence study of ZnO nanowires. Applied Physics Letters, 86 (15). 153117pp. doi:10.1063/1.1901827
 
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