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Li, M. F., Shan, W., Yu, P. Y., Hansen, W. L., Weber, E. R., Bauser, E. (1988) Pressure dependence of theDXcenter in Ga1−xAlxAs:Te in the vicinity of the Γ‐Xcrossover. Applied Physics Letters, 53 (13). 1195-1197 doi:10.1063/1.100017

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Reference TypeJournal (article/letter/editorial)
TitlePressure dependence of theDXcenter in Ga1−xAlxAs:Te in the vicinity of the Γ‐Xcrossover
JournalApplied Physics Letters
AuthorsLi, M. F.Author
Shan, W.Author
Yu, P. Y.Author
Hansen, W. L.Author
Weber, E. R.Author
Bauser, E.Author
Year1988 (September 26)Volume53
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.100017Search in ResearchGate
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Mindat Ref. ID8484235Long-form Identifiermindat:1:5:8484235:8
GUID0
Full ReferenceLi, M. F., Shan, W., Yu, P. Y., Hansen, W. L., Weber, E. R., Bauser, E. (1988) Pressure dependence of theDXcenter in Ga1−xAlxAs:Te in the vicinity of the Γ‐Xcrossover. Applied Physics Letters, 53 (13). 1195-1197 doi:10.1063/1.100017
Plain TextLi, M. F., Shan, W., Yu, P. Y., Hansen, W. L., Weber, E. R., Bauser, E. (1988) Pressure dependence of theDXcenter in Ga1−xAlxAs:Te in the vicinity of the Γ‐Xcrossover. Applied Physics Letters, 53 (13). 1195-1197 doi:10.1063/1.100017
In(1988, September) Applied Physics Letters Vol. 53 (13) AIP Publishing

See Also

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Shan, W., Yu, P. Y., Li, M. F., Hansen, W. L., Bauser, E. (1989) Pressure dependence of theDXcenter inGa1−xAlxAs:Te. Physical Review B, 40 (11) 7831-7838 doi:10.1103/physrevb.40.7831
Shan, W., Li, M. F., Yu, P. Y., Hansen, W. L., Walukiewicz, W. (1988) Pressure dependence of Schottky barrier height at the Pt/GaAs interface. Applied Physics Letters, 53 (11). 974-976 doi:10.1063/1.100045
Li, M. F., Yu, Peter Y., Shan, W., Hansen, W., Weber, E. R. (1989) Effect of boron on the deep donors (DXcenters) in GaAs:Si. Applied Physics Letters, 54 (14). 1344-1346 doi:10.1063/1.100710
Li, M. F., Yu, P. Y., Weber, E. R., Hansen, W. (1987) Lattice relaxation of pressure‐induced deep centers in GaAs:Si. Applied Physics Letters, 51 (5). 349-351 doi:10.1063/1.98437
Li, Ming Fu, Shan, W., Yu, P.Y., Hansen, W.L., Weber, Eicke R., Bauser, E. (1991) Pressure Dependence of the DX Center in Al0.35Ga0.65As:Te. Materials Science Forum, 38. 1103-1108 doi:10.4028/www.scientific.net/msf.38-41.1103
Uchida, K., Yu, P. Y., Noto, N., Weber, E. R. (1994) Pressure‐induced Γ‐Xcrossover in the conduction band of ordered and disordered GaInP alloys. Applied Physics Letters, 64 (21). 2858-2860 doi:10.1063/1.111449
Li, Ming‐fu, Yu, Peter Y., Weber, E. R. (1991) Simulation of effects of uniaxial stress on the deep level transient spectroscopy spectra of theDXcenter in AlGaAs alloys. Applied Physics Letters, 59 (10). 1197-1199 doi:10.1063/1.105501
Li, Ming‐fu, Yu, Peter Y., Weber, E. R. (1992) Comment on ‘‘Occupancy of theDXCenter in N‐Al0.32Ga0.68As under uniaxial stress’’. Applied Physics Letters, 60 (11). 1404 doi:10.1063/1.107305
Shan, W., Walukiewicz, W., Ager, J. W., Yu, K. M., Wu, J., Haller, E. E. (2004) Pressure dependence of the fundamental band-gap energy of CdSe. Applied Physics Letters, 84 (1). 67-69 doi:10.1063/1.1638879
Chen, Y. M., Peng, Z. H., Chan, W. K., Yu, L. P. (1994) New photorefractive polymer based on multifunctional polyurethane. Applied Physics Letters, 64 (10). 1195-1197 doi:10.1063/1.110887
Leroux, M., Pelous, G., Raymond, F., Verie, C. (1985) Minority‐carrier lifetime study of the pressure induced Γ‐Xcrossover in GaAs. Applied Physics Letters, 46 (3). 288-290 doi:10.1063/1.95661
 
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