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Li, M. F., Yu, Peter Y., Shan, W., Hansen, W., Weber, E. R. (1989) Effect of boron on the deep donors (DXcenters) in GaAs:Si. Applied Physics Letters, 54 (14). 1344-1346 doi:10.1063/1.100710

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Reference TypeJournal (article/letter/editorial)
TitleEffect of boron on the deep donors (DXcenters) in GaAs:Si
JournalApplied Physics Letters
AuthorsLi, M. F.Author
Yu, Peter Y.Author
Shan, W.Author
Hansen, W.Author
Weber, E. R.Author
Year1989 (April 3)Volume54
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.100710Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8486171Long-form Identifiermindat:1:5:8486171:5
GUID0
Full ReferenceLi, M. F., Yu, Peter Y., Shan, W., Hansen, W., Weber, E. R. (1989) Effect of boron on the deep donors (DXcenters) in GaAs:Si. Applied Physics Letters, 54 (14). 1344-1346 doi:10.1063/1.100710
Plain TextLi, M. F., Yu, Peter Y., Shan, W., Hansen, W., Weber, E. R. (1989) Effect of boron on the deep donors (DXcenters) in GaAs:Si. Applied Physics Letters, 54 (14). 1344-1346 doi:10.1063/1.100710
In(1989, April) Applied Physics Letters Vol. 54 (14) AIP Publishing

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Li, M. F., Yu, P. Y., Weber, E. R., Hansen, W. (1987) Lattice relaxation of pressure‐induced deep centers in GaAs:Si. Applied Physics Letters, 51 (5). 349-351 doi:10.1063/1.98437
Li, M. F., Shan, W., Yu, P. Y., Hansen, W. L., Weber, E. R., Bauser, E. (1988) Pressure dependence of theDXcenter in Ga1−xAlxAs:Te in the vicinity of the Γ‐Xcrossover. Applied Physics Letters, 53 (13). 1195-1197 doi:10.1063/1.100017
Li, Ming Fu, Yu, P.Y., Shan, W., Hansen, W.L., Weber, Eicke R. (1991) Reduction of Capture Barrier Height of Pressure-Induced Deep Donors (DX Center)in GaAs:Si. Materials Science Forum, 38. 851-856 doi:10.4028/www.scientific.net/msf.38-41.851
Li, M. F., Yu, Peter Y., Weber, Eicke R., Hansen, W. (1987) Photocapacitance study of pressure-induced deep donors in GaAs: Si. Physical Review B, 36 (8) 4531-4534 doi:10.1103/physrevb.36.4531
Shan, W., Li, M. F., Yu, P. Y., Hansen, W. L., Walukiewicz, W. (1988) Pressure dependence of Schottky barrier height at the Pt/GaAs interface. Applied Physics Letters, 53 (11). 974-976 doi:10.1063/1.100045
Mooney, P. M., Theis, T. N., Wright, S. L. (1988) Effect of local alloy disorder on emission kinetics of deep donors (DXcenters) in AlxGa1−xAs of low Al content. Applied Physics Letters, 53 (25). 2546-2548 doi:10.1063/1.100203
Li, Ming‐fu, Yu, Peter Y., Weber, E. R. (1991) Simulation of effects of uniaxial stress on the deep level transient spectroscopy spectra of theDXcenter in AlGaAs alloys. Applied Physics Letters, 59 (10). 1197-1199 doi:10.1063/1.105501
Yu, K. M., Liliental-Weber, Z., Walukiewicz, W., Shan, W., Ager, J. W., Li, S. X., Jones, R. E., Haller, E. E., Lu, Hai, Schaff, William J. (2005) On the crystalline structure, stoichiometry and band gap of InN thin films. Applied Physics Letters, 86 (7). 71910pp. doi:10.1063/1.1861513
Shan, W., Yu, P. Y., Li, M. F., Hansen, W. L., Bauser, E. (1989) Pressure dependence of theDXcenter inGa1−xAlxAs:Te. Physical Review B, 40 (11) 7831-7838 doi:10.1103/physrevb.40.7831
Kaminska, M., Liliental‐Weber, Z., Weber, E. R., George, T., Kortright, J. B., Smith, F. W., Tsaur, B‐Y., Calawa, A. R. (1989) Structural properties of As‐rich GaAs grown by molecular beam epitaxy at low temperatures. Applied Physics Letters, 54 (19). 1881-1883 doi:10.1063/1.101229
Yu, K. M., Walukiewicz, W., Wu, J., Shan, W., Beeman, J. W., Scarpulla, M. A., Dubon, O. D., Ridgway, M. C., Mars, D. E., Chamberlin, D. R. (2003) Mutual passivation of group IV donors and nitrogen in diluted GaNxAs1−x alloys. Applied Physics Letters, 83 (14). 2844-2846 doi:10.1063/1.1616980
 
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