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Posthill, J. B., Tarn, J. C. L., Das, K., Humphreys, T. P., Parikh, N. R. (1988) Observation of antiphase domain boundaries in GaAs on silicon by transmission electron microscopy. Applied Physics Letters, 53 (13). 1207-1209 doi:10.1063/1.100021

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Reference TypeJournal (article/letter/editorial)
TitleObservation of antiphase domain boundaries in GaAs on silicon by transmission electron microscopy
JournalApplied Physics Letters
AuthorsPosthill, J. B.Author
Tarn, J. C. L.Author
Das, K.Author
Humphreys, T. P.Author
Parikh, N. R.Author
Year1988 (September 26)Volume53
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.100021Search in ResearchGate
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Mindat Ref. ID8484243Long-form Identifiermindat:1:5:8484243:7
GUID0
Full ReferencePosthill, J. B., Tarn, J. C. L., Das, K., Humphreys, T. P., Parikh, N. R. (1988) Observation of antiphase domain boundaries in GaAs on silicon by transmission electron microscopy. Applied Physics Letters, 53 (13). 1207-1209 doi:10.1063/1.100021
Plain TextPosthill, J. B., Tarn, J. C. L., Das, K., Humphreys, T. P., Parikh, N. R. (1988) Observation of antiphase domain boundaries in GaAs on silicon by transmission electron microscopy. Applied Physics Letters, 53 (13). 1207-1209 doi:10.1063/1.100021
In(1988, September) Applied Physics Letters Vol. 53 (13) AIP Publishing

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Das, K., Humphreys, T. P., Posthill, J. B., Tarn, J. C. L., Wortman, J. J., Parikh, N. R. (1988) Molecular‐beam epitaxial growth and microstructural characterization of GaAs on Si with a buried implanted oxide. Journal of Applied Physics, 64 (8). 3934-3937 doi:10.1063/1.341349
Humphreys, T. P., Das, K., Posthill, J. B., Tarn, J. C. L., Jaing, B. L., Wortman, J. J., Parikh, N. R. (1988) Growth of GaAs on High Temperature Hydrogen Pretreated (100) Si Substrates by Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 27. 1458-1463 doi:10.1143/jjap.27.1458
Posthill, J. B., Markunas, R. J., Humphreys, T. P., Nemanich, R. J., Das, K., Parikh, N. R., Ross, P. L., Miner, C. J. (1989) Assessment of GaAs heteroepitaxial films grown on silicon‐on‐sapphire upgraded by double solid phase epitaxy. Applied Physics Letters, 55 (17). 1756-1758 doi:10.1063/1.102208
Humphreys, T. P., Miner, C. J., Posthill, J. B., Das, K., Summerville, M. K., Nemanich, R. J., Sukow, C. A., Parikh, N. R. (1989) Heteroepitaxial growth and characterization of GaAs on silicon‐on‐sapphire and sapphire substrates. Applied Physics Letters, 54 (17). 1687-1689 doi:10.1063/1.101303
Humphreys, T. P., Hamaguchi, N., Bedair, S. M., Tarn, J. C. L., El‐Masry, N., Radzimski, Z. J. (1988) Comparative studies of defects in GaAs on silicon substrates using electron‐beam‐induced current and transmission electron microscopy. Journal of Applied Physics, 64 (7). 3763-3765 doi:10.1063/1.341382
Humphreys, T. P., Posthill, J. B., Das, K., Sukow, C. A., Nemanichi, R. J., Parikh, N. R., Majeed, A. (1989) Raman Scattering Characterization of Strain in GaAs Heteroepitaxial Films Grown on Sapphire and Silicon-on-Sapphire Substrates. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l1595
Solomon, G. S., Posthill, J. B., Timmons, M. L. (1989) Antiphase domain boundary formation in single‐crystal chalcopyrite‐structure ZnGeAs2grown on GaAs. Applied Physics Letters, 55 (15). 1531-1533 doi:10.1063/1.102304
Malta, D. P., Posthill, J. B., Markunas, R. J., Humphreys, T. P. (1992) Low‐defect‐density germanium on silicon obtained by a novel growth phenomenon. Applied Physics Letters, 60 (7). 844-846 doi:10.1063/1.106532
El‐Masry, N., Tarn, J. C. L., Humphreys, T. P., Hamaguchi, N., Karam, N. H., Bedair, S. M. (1987) Effectiveness of strained‐layer superlattices in reducing defects in GaAs epilayers grown on silicon substrates. Applied Physics Letters, 51 (20). 1608-1610 doi:10.1063/1.98570
George, T., Foote, M. C., Vasquez, R. P., Fortier, E. P., Posthill, J. B. (1993) Below band‐gap laser ablation of diamond for transmission electron microscopy. Applied Physics Letters, 62 (22). 2880-2882 doi:10.1063/1.109188
Liu, D. G., Fan, J. C., Lee, C. P., Tsai, C. M., Chang, K. H., Liou, D. C., Lee, T. L., Chen, L. J. (1992) Direct observation of Si delta‐doped GaAs by transmission electron microscopy. Applied Physics Letters, 60 (21). 2628-2630 doi:10.1063/1.106902
 
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