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Humphreys, T. P., Miner, C. J., Posthill, J. B., Das, K., Summerville, M. K., Nemanich, R. J., Sukow, C. A., Parikh, N. R. (1989) Heteroepitaxial growth and characterization of GaAs on silicon‐on‐sapphire and sapphire substrates. Applied Physics Letters, 54 (17). 1687-1689 doi:10.1063/1.101303

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Reference TypeJournal (article/letter/editorial)
TitleHeteroepitaxial growth and characterization of GaAs on silicon‐on‐sapphire and sapphire substrates
JournalApplied Physics Letters
AuthorsHumphreys, T. P.Author
Miner, C. J.Author
Posthill, J. B.Author
Das, K.Author
Summerville, M. K.Author
Nemanich, R. J.Author
Sukow, C. A.Author
Parikh, N. R.Author
Year1989 (April 24)Volume54
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.101303Search in ResearchGate
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Mindat Ref. ID8486368Long-form Identifiermindat:1:5:8486368:9
GUID0
Full ReferenceHumphreys, T. P., Miner, C. J., Posthill, J. B., Das, K., Summerville, M. K., Nemanich, R. J., Sukow, C. A., Parikh, N. R. (1989) Heteroepitaxial growth and characterization of GaAs on silicon‐on‐sapphire and sapphire substrates. Applied Physics Letters, 54 (17). 1687-1689 doi:10.1063/1.101303
Plain TextHumphreys, T. P., Miner, C. J., Posthill, J. B., Das, K., Summerville, M. K., Nemanich, R. J., Sukow, C. A., Parikh, N. R. (1989) Heteroepitaxial growth and characterization of GaAs on silicon‐on‐sapphire and sapphire substrates. Applied Physics Letters, 54 (17). 1687-1689 doi:10.1063/1.101303
In(1989, April) Applied Physics Letters Vol. 54 (17) AIP Publishing

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Humphreys, T. P., Posthill, J. B., Das, K., Sukow, C. A., Nemanichi, R. J., Parikh, N. R., Majeed, A. (1989) Raman Scattering Characterization of Strain in GaAs Heteroepitaxial Films Grown on Sapphire and Silicon-on-Sapphire Substrates. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l1595
Posthill, J. B., Markunas, R. J., Humphreys, T. P., Nemanich, R. J., Das, K., Parikh, N. R., Ross, P. L., Miner, C. J. (1989) Assessment of GaAs heteroepitaxial films grown on silicon‐on‐sapphire upgraded by double solid phase epitaxy. Applied Physics Letters, 55 (17). 1756-1758 doi:10.1063/1.102208
Posthill, J. B. (1989) Erratum: Heteroepitaxial growth and characterization of GaAs on silicon‐on‐sapphire and sapphire substrates [Appl. Phys. Lett.54, 1687 (1989)]. Applied Physics Letters, 55 (4). 411 doi:10.1063/1.102375
Posthill, J. B., Tarn, J. C. L., Das, K., Humphreys, T. P., Parikh, N. R. (1988) Observation of antiphase domain boundaries in GaAs on silicon by transmission electron microscopy. Applied Physics Letters, 53 (13). 1207-1209 doi:10.1063/1.100021
Das, K., Humphreys, T. P., Posthill, J. B., Tarn, J. C. L., Wortman, J. J., Parikh, N. R. (1988) Molecular‐beam epitaxial growth and microstructural characterization of GaAs on Si with a buried implanted oxide. Journal of Applied Physics, 64 (8). 3934-3937 doi:10.1063/1.341349
Humphreys, T. P., Das, K., Posthill, J. B., Tarn, J. C. L., Jaing, B. L., Wortman, J. J., Parikh, N. R. (1988) Growth of GaAs on High Temperature Hydrogen Pretreated (100) Si Substrates by Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 27. 1458-1463 doi:10.1143/jjap.27.1458
Humphreys, T. P., Labrasca, J. V., Nemanich, R. J., Das, K., Posthill, J. B. (1991) High Temperature Rectifying Contacts Using Heteroepitaxial Ni Films on Semiconducting Diamond. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1409
Humphreys, Trevor P., Labrasca, John V., Turner, Kevin F., Nemanich, Robert J., Das, Kalyankumar, Posthill, John B., Hunn, John D., Parikh, Nalin R. (1992) Growth and Characterization of Titanium Silicide Films on Natural Diamond C(001) Substrates. Japanese Journal of Applied Physics, 31. 2369-2373 doi:10.1143/jjap.31.2369
Malta, D. P., Posthill, J. B., Markunas, R. J., Humphreys, T. P. (1992) Low‐defect‐density germanium on silicon obtained by a novel growth phenomenon. Applied Physics Letters, 60 (7). 844-846 doi:10.1063/1.106532
Rudder, R. A., Hudson, G. C., Posthill, J. B., Thomas, R. E., Hendry, R. C., Malta, D. P., Markunas, R. J., Humphreys, T. P., Nemanich, R. J. (1992) Chemical vapor deposition of diamond films from water vapor rf‐plasma discharges. Applied Physics Letters, 60 (3). 329-331 doi:10.1063/1.106668
Summerville, M. K., Posthill, J. B. (1989) Sample preparation technique for transmission electron microscopy of thin films on sapphire. Journal of Electron Microscopy Technique, 12 (1). 56-57 doi:10.1002/jemt.1060120106
 
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