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Edelman, F., Gutmanas, E. Y., Katz, A., Brener, R. (1988) Formation of nickel silicides in the Ni/Si3N4/Si system during rapid thermal annealing. Applied Physics Letters, 53 (13). 1186-1188 doi:10.1063/1.100665

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Reference TypeJournal (article/letter/editorial)
TitleFormation of nickel silicides in the Ni/Si3N4/Si system during rapid thermal annealing
JournalApplied Physics Letters
AuthorsEdelman, F.Author
Gutmanas, E. Y.Author
Katz, A.Author
Brener, R.Author
Year1988 (September 26)Volume53
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.100665Search in ResearchGate
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Mindat Ref. ID8484269Long-form Identifiermindat:1:5:8484269:5
GUID0
Full ReferenceEdelman, F., Gutmanas, E. Y., Katz, A., Brener, R. (1988) Formation of nickel silicides in the Ni/Si3N4/Si system during rapid thermal annealing. Applied Physics Letters, 53 (13). 1186-1188 doi:10.1063/1.100665
Plain TextEdelman, F., Gutmanas, E. Y., Katz, A., Brener, R. (1988) Formation of nickel silicides in the Ni/Si3N4/Si system during rapid thermal annealing. Applied Physics Letters, 53 (13). 1186-1188 doi:10.1063/1.100665
In(1988, September) Applied Physics Letters Vol. 53 (13) AIP Publishing

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Brener, R., Edelman, F., Gutmanas, E. Y. (1989) Formation of an interfacial AlN layer in an Al/Si3N4thinā€film system. Applied Physics Letters, 54 (10). 901-903 doi:10.1063/1.101418
Katz, A., Komem, Y. (1986) Contact structure formed in the Ni/Al/Si system due to rapid thermal melting. Applied Physics Letters, 49 (22). 1508-1510 doi:10.1063/1.97316
Katz, A., Komem, Y. (1988) The microstructure and electrical properties of contacts formed in the Ni/Al/Si system due to rapid thermal processing. Journal of Applied Physics, 63 (11). 5526-5533 doi:10.1063/1.340329
Edelman, F., Cytermann, C., Brener, R., Eizenberg, M., Weil, R., Beyer, W. (1992) Interfacial reactions in the Pd/aā€Si/cā€Si system. Journal of Applied Physics, 71 (1). 289-295 doi:10.1063/1.350702
Aslam, M., Soltis, R. E., Logothetis, E. M., Ager, R., Mikkor, M., Win, W., Chen, J. T., Wenger, L. E. (1988) Rapid thermal annealing of YBaCuO films on Si and SiO2substrates. Applied Physics Letters, 53 (2). 153-155 doi:10.1063/1.100578
Edelman, F., Cytermann, C., Brener, R., Eizenberg, M., Weil, R., Beyer, W. (1991) Phase transformations in the Cr/a-Si system during low temperature annealing. Journal of Non-Crystalline Solids, 137. 1063-1066 doi:10.1016/s0022-3093(05)80305-9
Kim, Y. M., Lo, G. Q., Kwong, D. L., Tasch, A. F., Novak, S. (1990) Extended defect evolution in boronā€implanted Si during rapid thermal annealing and its effects on the anomalous boron diffusion. Applied Physics Letters, 56 (13). 1254-1256 doi:10.1063/1.102529
Morgan, A. E., Broadbent, E. K., Ritz, K. N., Sadana, D. K., Burrow, B. J. (1988) Interactions of thin Ti films with Si, SiO2, Si3N4, and SiOxNyunder rapid thermal annealing. Journal of Applied Physics, 64 (1). 344-353 doi:10.1063/1.341434
Chi, J. Y., Koteles, Emil S., Holmstrom, R. P. (1988) Modification of exciton emission energies in InGaAs/AlInAs quantum wells by rapid thermal annealing. Applied Physics Letters, 53 (22). 2185-2187 doi:10.1063/1.100277
Chand, N., People, R., Baiocchi, F. A., Wecht, K. W., Cho, A. Y. (1986) Significant improvement in crystalline quality of molecular beam epitaxially grown GaAs on Siā€‰(100) by rapid thermal annealing. Applied Physics Letters, 49 (13). 815-817 doi:10.1063/1.97556
Ahn, S. T., Kennel, H. W., Plummer, J. D., Tiller, W. A. (1988) Enhanced Sb diffusion in Si under thermal Si3N4films during annealing in Ar. Applied Physics Letters, 53 (17). 1593-1595 doi:10.1063/1.100439
 
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