Watch the Dallas Symposium LIVE, and fundraiser auction
Ticket proceeds support mindat.org! - click here...
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Burns, G. P. (1988) Low‐temperature native oxide removal from silicon using nitrogen trifluoride prior to low‐temperature silicon epitaxy. Applied Physics Letters, 53 (15). 1423-1425 doi:10.1063/1.99961

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleLow‐temperature native oxide removal from silicon using nitrogen trifluoride prior to low‐temperature silicon epitaxy
JournalApplied Physics Letters
AuthorsBurns, G. P.Author
Year1988 (October 10)Volume53
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.99961Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8484397Long-form Identifiermindat:1:5:8484397:7
GUID0
Full ReferenceBurns, G. P. (1988) Low‐temperature native oxide removal from silicon using nitrogen trifluoride prior to low‐temperature silicon epitaxy. Applied Physics Letters, 53 (15). 1423-1425 doi:10.1063/1.99961
Plain TextBurns, G. P. (1988) Low‐temperature native oxide removal from silicon using nitrogen trifluoride prior to low‐temperature silicon epitaxy. Applied Physics Letters, 53 (15). 1423-1425 doi:10.1063/1.99961
In(1988, October) Applied Physics Letters Vol. 53 (15) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Ohmi, T., Matsudo, K., Shibata, T., Ichikawa, T., Iwabuchi, H. (1988) Low‐temperature silicon epitaxy by low‐energy bias sputtering. Applied Physics Letters, 53 (5). 364-366 doi:10.1063/1.99914
Friedrich, J. A., Neudeck, G. W., Liu, S. T. (1988) Limitations in low‐temperature silicon epitaxy due to water vapor and oxygen in the growth ambient. Applied Physics Letters, 53 (25). 2543-2545 doi:10.1063/1.100530
Meyerson, Bernard S., Uram, Kevin J., LeGoues, Francoise K. (1988) Cooperative growth phenomena in silicon/germanium low‐temperature epitaxy. Applied Physics Letters, 53 (25). 2555-2557 doi:10.1063/1.100206
Ohmi, T., Ichikawa, T., Shibata, T., Matsudo, K., Iwabuchi, H. (1988) Insitusubstrate‐surface cleaning for very low temperature silicon epitaxy by low‐kinetic‐energy particle bombardment. Applied Physics Letters, 53 (1). 45-47 doi:10.1063/1.100121
Mizushima, Ichiro, Mitani, Yuichiro, Miyano, Kiyotaka, Kambayashi, Shigeru (2000) Oxide-Mediated Solid Phase Epitaxy (OMSPE) of Silicon: A New Low-Temperature Epitaxy Technique Using Intentionally Grown Native Oxide. Japanese Journal of Applied Physics, 39. 2147-2150 doi:10.1143/jjap.39.2147
Haderbache, L., Wetzel, P., Pirri, C., Peruchetti, J. C., Bolmont, D., Gewinner, G. (1988) Epitaxy of CoSi2on Si (111) at low temperature (≤400 °C). Applied Physics Letters, 53 (15). 1384-1386 doi:10.1063/1.100456
Friess, E., Nützel, J., Abstreiter, G. (1992) Phosphorous doping in low temperature silicon molecular beam epitaxy. Applied Physics Letters, 60 (18). 2237-2239 doi:10.1063/1.107041
Tong, Q.-Y., Gan, Q., Fountain, G., Hudson, G., Enquist, P. (2004) Low-temperature bonding of silicon-oxide-covered wafers using diluted HF etching. Applied Physics Letters, 85 (14). 2762-2764 doi:10.1063/1.1800275
Lou, Jen‐Chung, Galewski, Carl, Oldham, William G. (1991) Dichlorosilane effects on low‐temperature selective silicon epitaxy. Applied Physics Letters, 58 (1). 59-61 doi:10.1063/1.104444
Donahue, T. J., Burger, W. R., Reif, R. (1984) Low‐temperature silicon epitaxy using low pressure chemical vapor deposition with and without plasma enhancement. Applied Physics Letters, 44 (3). 346-348 doi:10.1063/1.94754
Meyerson, B. S. (1986) Low‐temperature silicon epitaxy by ultrahigh vacuum/chemical vapor deposition. Applied Physics Letters, 48 (12). 797-799 doi:10.1063/1.96673
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: August 20, 2025 14:56:08
Go to top of page