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Epler, J. E., Thornton, R. L., Mosby, W. J., Paoli, T. L. (1988) Low threshold buried‐heterostructure quantum well lasers by excimer laser assisted disordering. Applied Physics Letters, 53 (16). 1459-1461 doi:10.1063/1.99966

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Reference TypeJournal (article/letter/editorial)
TitleLow threshold buried‐heterostructure quantum well lasers by excimer laser assisted disordering
JournalApplied Physics Letters
AuthorsEpler, J. E.Author
Thornton, R. L.Author
Mosby, W. J.Author
Paoli, T. L.Author
Year1988 (October 17)Volume53
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.99966Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8484490Long-form Identifiermindat:1:5:8484490:3
GUID0
Full ReferenceEpler, J. E., Thornton, R. L., Mosby, W. J., Paoli, T. L. (1988) Low threshold buried‐heterostructure quantum well lasers by excimer laser assisted disordering. Applied Physics Letters, 53 (16). 1459-1461 doi:10.1063/1.99966
Plain TextEpler, J. E., Thornton, R. L., Mosby, W. J., Paoli, T. L. (1988) Low threshold buried‐heterostructure quantum well lasers by excimer laser assisted disordering. Applied Physics Letters, 53 (16). 1459-1461 doi:10.1063/1.99966
In(1988, October) Applied Physics Letters Vol. 53 (16) AIP Publishing

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Epler, J. E., Thornton, R. L., Paoli, T. L. (1988) Very low threshold buried heterostructure quantum well lasers by laser‐assisted disordering. Applied Physics Letters, 52 (17). 1371-1373 doi:10.1063/1.99119
Epler, J. E., Burnham, R. D., Thornton, R. L., Paoli, T. L. (1987) Low threshold buried heterostructure quantum well diode lasers by laser‐assisted disordering. Applied Physics Letters, 50 (23). 1637-1639 doi:10.1063/1.97752
Epler, J. E., Burnham, R. D., Thornton, R. L., Paoli, T. L. (1987) Low‐threshold disorder‐defined buried‐heterostructure AlGaAs diode lasers by anisotropic diffusion of laser‐incorporated Si. Applied Physics Letters, 51 (10). 731-733 doi:10.1063/1.98849
Epler, J. E., Burnham, R. D., Paoli, T. L. (1987) Low‐threshold gain‐guided coupled‐stripe quantum well diode lasers by laser‐assisted processing. Applied Physics Letters, 51 (8). 558-560 doi:10.1063/1.98346
Thornton, R. L., Burnham, R. D., Paoli, T. L., Holonyak, N., Deppe, D. G. (1985) Low threshold planar buried heterostructure lasers fabricated by impurity‐induced disordering. Applied Physics Letters, 47 (12). 1239-1241 doi:10.1063/1.96290
Thornton, R. L., Mosby, W. J., Chung, H. F. (1988) Unified planar process for fabricating heterojunction bipolar transistors and buried‐heterostructure lasers utilizing impurity‐induced disordering. Applied Physics Letters, 53 (26). 2669-2671 doi:10.1063/1.100192
Guido, L. J., Jackson, G. S., Plano, W. E., Hsieh, K. C., Holonyak, N., Burnham, R. D., Epler, J. E., Thornton, R. L., Paoli, T. L. (1987) Index‐guided AlxGa1−xAs‐GaAs quantum well heterostructure lasers fabricated by vacancy‐enhanced impurity‐induced layer disordering from an internal (Si2)y(GaAs)1−ysource. Applied Physics Letters, 50 (10). 609-611 doi:10.1063/1.98096
Deppe, D. G., Jackson, G. S., Holonyak, N., Hall, D. C., Burnham, R. D., Thornton, R. L., Epler, J. E., Paoli, T. L. (1987) Impurity‐induced layer‐disordered buried heterostructure AlxGa1−xAs‐GaAs quantum well edge‐injection laser array. Applied Physics Letters, 50 (7). 392-394 doi:10.1063/1.98209
Epler, J. E., Burnham, R. D., Thornton, R. L., Paoli, T. L., Bashaw, M. C. (1986) Laser induced disordering of GaAs‐AlGaAs superlattice and incorporation of Si impurity. Applied Physics Letters, 49 (21). 1447-1449 doi:10.1063/1.97298
Epler, J. E., Jackson, G. S., Holonyak, N., Thornton, R. L., Burnham, R. D., Paoli, T. L. (1985) Broadband operation of coupled‐stripe multiple quantum well AlGaAs laser diodes. Applied Physics Letters, 47 (8). 779-780 doi:10.1063/1.96035
Epler, J. E., Holonyak, N., Burnham, R. D., Lindström, C., Streifer, W., Paoli, T. L. (1983) Broadband tuning (ΔE∼100 meV) of AlxGa1−xAs quantum well heterostructure lasers with an external grating. Applied Physics Letters, 43 (8). 740-742 doi:10.1063/1.94480
 
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