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Higuchi, T., Gaylord, E., Rozgonyi, G. A., Shimura, F. (1988) Minority‐carrier lifetime of magnetic field applied Czochralski silicon wafers. Applied Physics Letters, 53 (19). 1850-1852 doi:10.1063/1.100374

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Reference TypeJournal (article/letter/editorial)
TitleMinority‐carrier lifetime of magnetic field applied Czochralski silicon wafers
JournalApplied Physics Letters
AuthorsHiguchi, T.Author
Gaylord, E.Author
Rozgonyi, G. A.Author
Shimura, F.Author
Year1988 (November 7)Volume53
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.100374Search in ResearchGate
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Mindat Ref. ID8484659Long-form Identifiermindat:1:5:8484659:4
GUID0
Full ReferenceHiguchi, T., Gaylord, E., Rozgonyi, G. A., Shimura, F. (1988) Minority‐carrier lifetime of magnetic field applied Czochralski silicon wafers. Applied Physics Letters, 53 (19). 1850-1852 doi:10.1063/1.100374
Plain TextHiguchi, T., Gaylord, E., Rozgonyi, G. A., Shimura, F. (1988) Minority‐carrier lifetime of magnetic field applied Czochralski silicon wafers. Applied Physics Letters, 53 (19). 1850-1852 doi:10.1063/1.100374
In(1988, November) Applied Physics Letters Vol. 53 (19) AIP Publishing

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Kirino, Y., Shimura, F. (1991) Noncontact minority‐carrier lifetime measurement for magnetic field applied Czochralski silicon crystals. Journal of Applied Physics, 69 (4). 2700-2702 doi:10.1063/1.348641
Shimura, F., Higuchi, T., Hockett, R. S. (1988) Outdiffusion of oxygen and carbon in Czochralski silicon. Applied Physics Letters, 53 (1). 69-71 doi:10.1063/1.100126
Shimura, F., Okui, T., Kusama, T. (1990) Noncontact minority‐carrier lifetime measurement at elevated temperatures for metal‐doped Czochralski silicon crystals. Journal of Applied Physics, 67 (11). 7168-7171 doi:10.1063/1.344548
Hayamizu, Y., Hamaguchi, T., Ushio, S., Abe, T., Shimura, F. (1991) Temperature dependence of minority‐carrier lifetime in iron‐diffusedp‐type silicon wafers. Journal of Applied Physics, 69 (5). 3077-3081 doi:10.1063/1.348570
Yoon, Yohan, Yan, Yixin, Ostrom, Nels P., Kim, Jinwoo, Rozgonyi, George (2012) Deep level transient spectroscopy and minority carrier lifetime study on Ga-doped continuous Czochralski silicon. Applied Physics Letters, 101 (22). 222107pp. doi:10.1063/1.4766337
Rozgonyi, G. A., Pearce, C. W. (1977) Interstitial oxygen gettering in Czochralski silicon wafers. Applied Physics Letters, 31 (5). 343-345 doi:10.1063/1.89693
Zhong, L., Buczkowski, A., Katayama, K., Shimura, F. (1992) Transient recovery of minority‐carrier lifetime in silicon after ultraviolet irradiation. Applied Physics Letters, 61 (8). 931-933 doi:10.1063/1.107732
Daio, Hiroshi, Shimura, Fumio (1993) Dependence of Minority-Carrier Recombination Lifetime on Surface Microroughness in Silicon Wafers. Japanese Journal of Applied Physics, 32. doi:10.1143/jjap.32.l1792
Rozgonyi, G. A., Pearce, C. W. (1978) Gettering of surface and bulk impurities in Czochralski silicon wafers. Applied Physics Letters, 32 (11). 747-749 doi:10.1063/1.89908
Kvit, A., Karoui, A., Duscher, G., Rozgonyi, G. A. (2004) “Umbrella”-like precipitates in nitrogen-doped Czochralski silicon wafers. Applied Physics Letters, 84 (11). 1889-1891 doi:10.1063/1.1669069
Shimura, Fumio (1981) Redissolution of precipitated oxygen in Czochralski‐grown silicon wafers. Applied Physics Letters, 39 (12). 987-989 doi:10.1063/1.92636
 
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