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Kvit, A., Karoui, A., Duscher, G., Rozgonyi, G. A. (2004) “Umbrella”-like precipitates in nitrogen-doped Czochralski silicon wafers. Applied Physics Letters, 84 (11). 1889-1891 doi:10.1063/1.1669069

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Reference TypeJournal (article/letter/editorial)
Title“Umbrella”-like precipitates in nitrogen-doped Czochralski silicon wafers
JournalApplied Physics Letters
AuthorsKvit, A.Author
Karoui, A.Author
Duscher, G.Author
Rozgonyi, G. A.Author
Year2004 (March 15)Volume84
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.1669069Search in ResearchGate
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Mindat Ref. ID8538045Long-form Identifiermindat:1:5:8538045:7
GUID0
Full ReferenceKvit, A., Karoui, A., Duscher, G., Rozgonyi, G. A. (2004) “Umbrella”-like precipitates in nitrogen-doped Czochralski silicon wafers. Applied Physics Letters, 84 (11). 1889-1891 doi:10.1063/1.1669069
Plain TextKvit, A., Karoui, A., Duscher, G., Rozgonyi, G. A. (2004) “Umbrella”-like precipitates in nitrogen-doped Czochralski silicon wafers. Applied Physics Letters, 84 (11). 1889-1891 doi:10.1063/1.1669069
In(2004, March) Applied Physics Letters Vol. 84 (11) AIP Publishing

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Karoui, A., Rozgonyi, G. A. (2004) Oxygen precipitation in nitrogen doped Czochralski silicon wafers. II. Effects of nitrogen and oxygen coupling. Journal of Applied Physics, 96 (6). 3264-3271 doi:10.1063/1.1773922
Karoui, A., Sahtout Karoui, F., Rozgonyi, G. A., Yang, D. (2004) Oxygen precipitation in nitrogen doped Czochralski silicon wafers. I. Formation mechanisms of near-surface and bulk defects. Journal of Applied Physics, 96 (6). 3255-3263 doi:10.1063/1.1773921
Karoui, A., Karoui, F. Sahtout, Kvit, A., Rozgonyi, G. A., Yang, D. (2002) Role of nitrogen related complexes in the formation of defects in silicon. Applied Physics Letters, 80 (12). 2114-2116 doi:10.1063/1.1462874
Rozgonyi, G. A., Pearce, C. W. (1978) Gettering of surface and bulk impurities in Czochralski silicon wafers. Applied Physics Letters, 32 (11). 747-749 doi:10.1063/1.89908
Stoddard, N., Duscher, G., Karoui, A., Stevie, F., Rozgonyi, G. (2005) Segregation and enhanced diffusion of nitrogen in silicon induced by low energy ion bombardment. Journal of Applied Physics, 97 (8). 83534pp. doi:10.1063/1.1866480
Rozgonyi, G. A., Pearce, C. W. (1977) Interstitial oxygen gettering in Czochralski silicon wafers. Applied Physics Letters, 31 (5). 343-345 doi:10.1063/1.89693
Kvit, A., Yankov, R. A., Duscher, G., Rozgonyi, G., Glasko, J. M. (2003) Formation of nanoscale voids and related metallic impurity gettering in high-energy ion-implanted and annealed epitaxial silicon. Applied Physics Letters, 83 (7). 1367-1369 doi:10.1063/1.1601678
Higuchi, T., Gaylord, E., Rozgonyi, G. A., Shimura, F. (1988) Minority‐carrier lifetime of magnetic field applied Czochralski silicon wafers. Applied Physics Letters, 53 (19). 1850-1852 doi:10.1063/1.100374
Rozgonyi, G. A., Mahajan, S., Read, M. H., Brasen, D. (1976) Sources of oxidation‐induced stacking faults in Czochralski silicon wafers. Applied Physics Letters, 29 (9). 531-533 doi:10.1063/1.89174
Karoui, A., Karoui, F. Sahtout, Rozgonyi, G. A., Hourai, M., Sueoka, K. (2003) Structure, Energetics, and Thermal Stability of Nitrogen-Vacancy-Related Defects in Nitrogen Doped Silicon. Journal of the Electrochemical Society, 150. doi:10.1149/1.1621418
Ono, Toshiaki, Rozgonyi, George A., Asayama, Eiichi, Horie, Hiroshi, Tsuya, Hideki, Sueoka, Koji (1999) Oxygen diffusion in heavily antimony-, arsenic-, and boron-doped Czochralski silicon wafers. Applied Physics Letters, 74 (24). 3648-3650 doi:10.1063/1.123210
 
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