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Zhou, G. L., Chen, K. M., Jiang, W. D., Sheng, C., Zhang, X. J., Wang, Xun (1988) Heteroepitaxial growth of Ge films on Si substrates by molecular beam epitaxy. Applied Physics Letters, 53 (22). 2179-2181 doi:10.1063/1.100275

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Reference TypeJournal (article/letter/editorial)
TitleHeteroepitaxial growth of Ge films on Si substrates by molecular beam epitaxy
JournalApplied Physics Letters
AuthorsZhou, G. L.Author
Chen, K. M.Author
Jiang, W. D.Author
Sheng, C.Author
Zhang, X. J.Author
Wang, XunAuthor
Year1988 (November 28)Volume53
Issue22
PublisherAIP Publishing
DOIdoi:10.1063/1.100275Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8484946Long-form Identifiermindat:1:5:8484946:7
GUID0
Full ReferenceZhou, G. L., Chen, K. M., Jiang, W. D., Sheng, C., Zhang, X. J., Wang, Xun (1988) Heteroepitaxial growth of Ge films on Si substrates by molecular beam epitaxy. Applied Physics Letters, 53 (22). 2179-2181 doi:10.1063/1.100275
Plain TextZhou, G. L., Chen, K. M., Jiang, W. D., Sheng, C., Zhang, X. J., Wang, Xun (1988) Heteroepitaxial growth of Ge films on Si substrates by molecular beam epitaxy. Applied Physics Letters, 53 (22). 2179-2181 doi:10.1063/1.100275
In(1988, November) Applied Physics Letters Vol. 53 (22) AIP Publishing

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Jiang, Weidong, Zhou, Guoliang, Chen, Keming, Sheng, Chi, Zhang, Xiangjiu, Wang, Xun (1987) Growth and characterization of silicon molecular beam epilayers on GaP (111) substrates. Applied Physics Letters, 51 (23). 1910-1912 doi:10.1063/1.98297
Zhang, Yanhui, Jiang, Haitao, Yang, Zaihong, Fan, Liuyan, Zhang, Ziteng, Zhou, Can, Zhou, Xiaohao, Chen, Pingping (2025) Growth of CdTe films on patterned graphene/Ge (100) by molecular beam epitaxy. Applied Physics Letters, 126 (13). doi:10.1063/5.0257127
Sheldon, P., Yacobi, B. G., Jones, K. M., Dunlavy, D. J. (1985) Growth and characterization of GaAs/Ge epilayers grown on Si substrates by molecular beam epitaxy. Journal of Applied Physics, 58 (11). 4186-4193 doi:10.1063/1.335551
Williams, G. M., Whitehouse, C. R., McConville, C. F., Cullis, A. G., Ashley, T., Courtney, S. J., Elliott, C. T. (1988) Heteroepitaxial growth of InSb on (100)GaAs using molecular beam epitaxy. Applied Physics Letters, 53 (13). 1189-1191 doi:10.1063/1.100405
Kalem, Ş., Chyi, J., Litton, C. W., Morkoç, H., Kan, S. C., Yariv, A. (1988) Electrical properties of InAs epilayers grown by molecular beam epitaxy on Si substrates. Applied Physics Letters, 53 (7). 562-564 doi:10.1063/1.99857
Yodo, T., Tamura, M., López, M., Kajikawa, Y. (1994) GaAs heteroepitaxial growth on vicinal Si(110) substrates by molecular beam epitaxy. Journal of Applied Physics, 76 (11). 7630-7632 doi:10.1063/1.357932
Akeura, K., Tanaka, M., Ueki, M., Nishinaga, T. (1995) Epitaxial ferromagnetic MnAs thin films grown by molecular beam epitaxy on Si (001) substrates. Applied Physics Letters, 67 (22). 3349-3351 doi:10.1063/1.115243
Zhou, X. Y., Miao, J., Dai, J. Y., Chan, H. L. W., Choy, C. L., Wang, Y., Li, Q. (2007) Epitaxial growth of SrTiO3 thin film on Si by laser molecular beam epitaxy. Applied Physics Letters, 90 (1). 12902pp. doi:10.1063/1.2430407
Fons, P., Hirashita, N., Markert, L. C., Kim, Y.‐W., Greene, J. E., Ni, W.‐X., Knall, J., Hansson, G. V., Sundgren, J.‐E. (1988) Electrical properties of Si(100) films doped with low‐energy (≤150 eV) Sb ions during growth by molecular beam epitaxy. Applied Physics Letters, 53 (18). 1732-1734 doi:10.1063/1.99809
Williams, G. M., Whitehouse, C. R., Cullis, A. G., Chew, N. G., Blackmore, G. W. (1988) Growth of CdTe‐InSb multilayer structures on (100) InSb substrates using molecular beam epitaxy. Applied Physics Letters, 53 (19). 1847-1849 doi:10.1063/1.100373
Kim, J. G., Frenkel, A. C., Liu, H., Park, R. M. (1994) Growth by molecular beam epitaxy and electrical characterization of Si‐doped zinc blende GaN films deposited on β‐SiC coated (001) Si substrates. Applied Physics Letters, 65 (1). 91-93 doi:10.1063/1.113085
 
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