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Kim, Yudong, Massoud, Hisham Z., Fair, Richard B. (1988) Boron profile changes during low‐temperature annealing of BF+2‐implanted silicon. Applied Physics Letters, 53 (22). 2197-2199 doi:10.1063/1.100505

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Reference TypeJournal (article/letter/editorial)
TitleBoron profile changes during low‐temperature annealing of BF+2‐implanted silicon
JournalApplied Physics Letters
AuthorsKim, YudongAuthor
Massoud, Hisham Z.Author
Fair, Richard B.Author
Year1988 (November 28)Volume53
Issue22
PublisherAIP Publishing
DOIdoi:10.1063/1.100505Search in ResearchGate
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Mindat Ref. ID8485002Long-form Identifiermindat:1:5:8485002:9
GUID0
Full ReferenceKim, Yudong, Massoud, Hisham Z., Fair, Richard B. (1988) Boron profile changes during low‐temperature annealing of BF+2‐implanted silicon. Applied Physics Letters, 53 (22). 2197-2199 doi:10.1063/1.100505
Plain TextKim, Yudong, Massoud, Hisham Z., Fair, Richard B. (1988) Boron profile changes during low‐temperature annealing of BF+2‐implanted silicon. Applied Physics Letters, 53 (22). 2197-2199 doi:10.1063/1.100505
In(1988, November) Applied Physics Letters Vol. 53 (22) AIP Publishing

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Subrahmanyan, Ravi, Massoud, Hisham Z., Fair, Richard B. (1988) Experimental characterization of two‐dimensional dopant profiles in silicon using chemical staining. Applied Physics Letters, 52 (25). 2145-2147 doi:10.1063/1.99559
Subrahmanyan, Ravi, Massoud, Hisham Z., Fair, Richard B. (1987) The influence of HCl on the oxidation‐enhanced diffusion of boron and arsenic in silicon. Journal of Applied Physics, 61 (10). 4804-4807 doi:10.1063/1.338342
Massoud, Hisham Z. (1988) Reverse dopant redistribution during the initial stages of the oxidation of heavily doped silicon in dry oxygen. Applied Physics Letters, 53 (6). 497-499 doi:10.1063/1.100618
Huang, J., Fan, D., Jaccodine, R. J. (1988) Reverse annealing and low‐temperature diffusion of boron in boron‐implanted silicon. Journal of Applied Physics, 63 (11). 5521-5525 doi:10.1063/1.340328
Rogers, W. Boyd, Massoud, Hisham Z., Fair, Richard B., Gösele, Ulrich M., Tan, Teh Y., Rozgonyi, George A. (1989) The role of silicon self‐interstitial supersaturation in the retardation of oxygen precipitation in Czochralski silicon. Journal of Applied Physics, 65 (11). 4215-4219 doi:10.1063/1.343303
Adekoya, W. O., Hage‐Ali, M., Muller, J. C., Siffert, P. (1988) Dose effects during solid phase epitaxial regrowth of boron‐implanted, germanium‐amorphized silicon induced by rapid thermal annealing. Applied Physics Letters, 53 (6). 511-513 doi:10.1063/1.99882
Schroer, E., Privitera, V., Priolo, F., Napolitani, E., Carnera, A. (1999) Clustering of ultra-low-energy implanted boron in silicon during postimplantation annealing. Applied Physics Letters, 74 (26). 3996-3998 doi:10.1063/1.123239
Rogers, W. Boyd, Massoud, Hisham Z. (1989) Transfer of patterns from the backside of a silicon wafer coated with Si3N4to its front surface during wet oxidation. Applied Physics Letters, 55 (2). 159-161 doi:10.1063/1.102398
Velichko, O. I., Kavaliova, A. P. (2013) Simulation of boron diffusion during low-temperature annealing of implanted silicon. Applied Physics A, 111. 1221-1227 doi:10.1007/s00339-012-7378-4
de Lyon, T. J., Casey, H. C., Massoud, H. Z., Timmons, M. L., Hutchby, J. A., Dietrich, H. B. (1988) Influence of rapid thermal annealing temperature on the electrical properties of Be‐implanted GaAsp‐njunctions. Applied Physics Letters, 52 (26). 2244-2246 doi:10.1063/1.99544
Nieh, C. W., Chen, L. J. (1986) Formation of bubbles in BF+2‐implanted silicon. Applied Physics Letters, 48 (22). 1528-1530 doi:10.1063/1.96857
 
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