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Lee, D. M., Posthill, J. B., Shimura, F., Rozgonyi, G. A. (1988) Impurity gettering by misfit dislocations in Si (2% Ge) epitaxy: nickel. Applied Physics Letters, 53 (5). 370-372 doi:10.1063/1.99897

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Reference TypeJournal (article/letter/editorial)
TitleImpurity gettering by misfit dislocations in Si (2% Ge) epitaxy: nickel
JournalApplied Physics Letters
AuthorsLee, D. M.Author
Posthill, J. B.Author
Shimura, F.Author
Rozgonyi, G. A.Author
Year1988 (August)Volume53
Issue5
PublisherAIP Publishing
DOIdoi:10.1063/1.99897Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8485518Long-form Identifiermindat:1:5:8485518:5
GUID0
Full ReferenceLee, D. M., Posthill, J. B., Shimura, F., Rozgonyi, G. A. (1988) Impurity gettering by misfit dislocations in Si (2% Ge) epitaxy: nickel. Applied Physics Letters, 53 (5). 370-372 doi:10.1063/1.99897
Plain TextLee, D. M., Posthill, J. B., Shimura, F., Rozgonyi, G. A. (1988) Impurity gettering by misfit dislocations in Si (2% Ge) epitaxy: nickel. Applied Physics Letters, 53 (5). 370-372 doi:10.1063/1.99897
In(1988, August) Applied Physics Letters Vol. 53 (5) AIP Publishing

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Lee, D. M., Rozgonyi, G. A. (1994) Low‐temperature gettering of trace iron and copper by misfit dislocations in Si/Si(Ge) epitaxy. Applied Physics Letters, 65 (3). 350-352 doi:10.1063/1.112370
Salih, A. S., Kim, H. J., Davis, R. F., Rozgonyi, G. A. (1985) Extrinsic gettering via the controlled introduction of misfit dislocations. Applied Physics Letters, 46 (4). 419-421 doi:10.1063/1.95598
Rozgonyi, G. A., Petroff, P. M., Panish, M. B. (1974) Elimination of dislocations in heteroepitaxial layers by the controlled introduction of interfacial misfit dislocations. Applied Physics Letters, 24 (6). 251-254 doi:10.1063/1.1655171
Braga, N., Buczkowski, A., Kirk, H. R., Rozgonyi, G. A. (1994) Formation of cylindricaln/pjunction diodes by arsenic enhanced diffusion along interfacial misfit dislocations inp‐type epitaxial Si/Si(Ge). Applied Physics Letters, 64 (11). 1410-1412 doi:10.1063/1.111899
Lu, Jinggang, Yu, Xuegong, Park, Yongkook, Rozgonyi, George (2009) Investigation of iron impurity gettering at dislocations in a SiGe/Si heterostructure. Journal of Applied Physics, 105 (7). 73712pp. doi:10.1063/1.3093912
Higuchi, T., Gaylord, E., Rozgonyi, G. A., Shimura, F. (1988) Minority‐carrier lifetime of magnetic field applied Czochralski silicon wafers. Applied Physics Letters, 53 (19). 1850-1852 doi:10.1063/1.100374
Hutchins, J. W., Skromme, B. J., Chen, Y. P., Sivananthan, S., Posthill, J. B. (1997) Optical investigation of strain and defects in (100) CdTe/Ge/Si and ZnTe/Ge/Si grown by molecular beam epitaxy. Applied Physics Letters, 71 (3). 350-352 doi:10.1063/1.119534
Abrahams, M. S., Buiocchi, C. J., Corboy, J. F., Cullen, G. W. (1976) Misfit dislocations in heteroepitaxial Si on sapphire. Applied Physics Letters, 28 (5). 275-277 doi:10.1063/1.88733
Jiang, B. L., Shimura, F., Rozgonyi, G. A., Hamaguchi, N., Bedair, S. M. (1988) Erratum: Single‐crystal x‐ray diffraction study of the InGaAs‐GaAsP/GaAs superlattice system [Appl. Phys. Lett. 52, 1258 (1988)]. Applied Physics Letters, 53 (6). 537 doi:10.1063/1.100420
Ioannou, D. E., Huang, Y. J., Iliadis, A. A. (1988) Deep states and misfit dislocations in indium‐doped GaAs layers grown by molecular beam epitaxy. Applied Physics Letters, 52 (26). 2258-2260 doi:10.1063/1.99530
Kikuchi, H., Kitakata, M., Toyokawa, F., Mikami, M. (1989) New gettering using misfit dislocations in homoepitaxial wafers with heavily boron‐doped silicon substrates. Applied Physics Letters, 54 (5). 463-465 doi:10.1063/1.100953
 
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