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Kim, B. G., Garmire, E., Hummel, Steven G., Dapkus, P. D. (1989) Nonlinear Bragg reflector based on saturable absorption. Applied Physics Letters, 54 (12). 1095-1097 doi:10.1063/1.100768

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Reference TypeJournal (article/letter/editorial)
TitleNonlinear Bragg reflector based on saturable absorption
JournalApplied Physics Letters
AuthorsKim, B. G.Author
Garmire, E.Author
Hummel, Steven G.Author
Dapkus, P. D.Author
Year1989 (March 20)Volume54
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.100768Search in ResearchGate
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Mindat Ref. ID8486035Long-form Identifiermindat:1:5:8486035:4
GUID0
Full ReferenceKim, B. G., Garmire, E., Hummel, Steven G., Dapkus, P. D. (1989) Nonlinear Bragg reflector based on saturable absorption. Applied Physics Letters, 54 (12). 1095-1097 doi:10.1063/1.100768
Plain TextKim, B. G., Garmire, E., Hummel, Steven G., Dapkus, P. D. (1989) Nonlinear Bragg reflector based on saturable absorption. Applied Physics Letters, 54 (12). 1095-1097 doi:10.1063/1.100768
In(1989, March) Applied Physics Letters Vol. 54 (12) AIP Publishing

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Kost, Alan, Lee, H. C., Zou, Yao, Dapkus, P. D., Garmire, Elsa (1989) Band‐edge absorption coefficients from photoluminescence in semiconductor multiple quantum wells. Applied Physics Letters, 54 (14). 1356-1358 doi:10.1063/1.100714
Danner, A. D., Dapkus, P. D., Kost, A., Garmire, E. (1988) Nonlinear optical absorption in GaAs doping superlattices. Journal of Applied Physics, 64 (10). 5206-5209 doi:10.1063/1.342433
Lee, H. C., Hariz, A., Dapkus, P. D., Kost, A., Kawase, M., Garmire, E. (1987) Nonlinear absorption in AlGaAs/GaAs multiple quantum well structures grown by metalorganic chemical vapor deposition. Applied Physics Letters, 50 (17). 1182-1184 doi:10.1063/1.97904
Kim, B. G., Garmire, E., Shibata, N., Zembutsu, S. (1987) Optical bistability and nonlinear switching due to increasing absorption in single‐crystal ZnSe waveguides. Applied Physics Letters, 51 (7). 475-477 doi:10.1063/1.98398
Jeong, Weon G., Menu, E. P., Dapkus, P. D. (1989) Steric hindrance effects in atomic layer epitaxy of InAs. Applied Physics Letters, 55 (3). 244-246 doi:10.1063/1.101920
Kost, A., Garmire, E., Danner, A., Dapkus, P. D. (1988) Large optical nonlinearities in a GaAs/AlGaAs heteron‐i‐p‐istructure. Applied Physics Letters, 52 (8). 637-639 doi:10.1063/1.99389
Lee, H. C., Dzurko, K. M., Dapkus, P. D., Garmire, E. (1987) Electroabsorption in AlGaAs/GaAs multiple quantum well structures grown on a GaP transparent substrate. Applied Physics Letters, 51 (20). 1582-1584 doi:10.1063/1.98561
Osinski, J. S., Dzurko, K. M., Hummel, S. G., Dapkus, P. D. (1990) Optimization of stripe width for low‐threshold operation of quantum well laser diodes. Applied Physics Letters, 56 (25). 2487-2489 doi:10.1063/1.102887
Zhu, T., Dussaigne, A., Christmann, G., Pinquier, C., Feltin, E., Martin, D., ButtĂ©, R., Grandjean, N. (2008) Nonpolar GaN-based microcavity using AlN∕GaN distributed Bragg reflector. Applied Physics Letters, 92 (6). 61114pp. doi:10.1063/1.2857500
Hummel, S. G., Zou, Y., Beyler, C. A., Grodzinski, P., Dapkus, P. D., McManus, J. V., Zhang, Y., Skromme, B. J., Lee, W. I. (1992) Characteristics of GaAs, AlGaAs, and InGaAs materials grown by metalorganic chemical vapor deposition using an on‐demand hydride gas generator. Applied Physics Letters, 60 (12). 1483-1485 doi:10.1063/1.107278
Hummel, S. G., Beyler, C. A., Zou, Y., Grodzinski, P., Dapkus, P. D. (1990) Use of tertiarybutylarsine in the fabrication of GaAs/AlGaAs quantum wells and quantum well lasers. Applied Physics Letters, 57 (7). 695-697 doi:10.1063/1.103595
 
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