Basmaji, P., Zaouk, A., Gibart, P., Gauthier, D., Portal, J. C. (1989) Enhancement of free‐carrier concentration inn‐type AlxGa1−xAs grown by metalorganic vapor phase epitaxy in the temperature range 850–950 °C. Applied Physics Letters, 54 (12). 1121-1123 doi:10.1063/1.100775

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Reference Type	Journal (article/letter/editorial)
Title	Enhancement of free‐carrier concentration inn‐type AlxGa1−xAs grown by metalorganic vapor phase epitaxy in the temperature range 850–950 °C
Journal	Applied Physics Letters
Authors	Basmaji, P.		Author
	Zaouk, A.		Author
	Gibart, P.		Author
	Gauthier, D.		Author
	Portal, J. C.		Author
Year	1989 (March 20)	Volume	54
Issue	12
Publisher	AIP Publishing
DOI	doi:10.1063/1.100775Search in ResearchGate
	Generate Citation Formats
Mindat Ref. ID	8486049	Long-form Identifier	mindat:1:5:8486049:7
GUID	0
Full Reference	Basmaji, P., Zaouk, A., Gibart, P., Gauthier, D., Portal, J. C. (1989) Enhancement of free‐carrier concentration inn‐type AlxGa1−xAs grown by metalorganic vapor phase epitaxy in the temperature range 850–950 °C. Applied Physics Letters, 54 (12). 1121-1123 doi:10.1063/1.100775
Plain Text	Basmaji, P., Zaouk, A., Gibart, P., Gauthier, D., Portal, J. C. (1989) Enhancement of free‐carrier concentration inn‐type AlxGa1−xAs grown by metalorganic vapor phase epitaxy in the temperature range 850–950 °C. Applied Physics Letters, 54 (12). 1121-1123 doi:10.1063/1.100775
In	(1989, March) Applied Physics Letters Vol. 54 (12) AIP Publishing

	Mooney, P. M., Parker, B. D., Cardone, F., Gibart, P., Portal, J. C. (1992) DXcenters in Sn‐doped AlxGa1−xAs grown by metalorganic vapor phase epitaxy atT≥850 °C. Applied Physics Letters, 60 (3). 374-376 doi:10.1063/1.106661
	Basmaji, P., Guittard, M., Gibart, P. (1987) Enhancement of the free carrier density in Ga1-xAlx as grown by metallorganic vapor phase epitaxy under high temperature growth conditions. physica status solidi (a), 100 (1). doi:10.1002/pssa.2211000154
	Thomeer, R. A. J., Hageman, P. R., Giling, L. J. (1994) Radiatively controlled lifetimes in AlxGa1−xAs grown by metalorganic vapor phase epitaxy. Applied Physics Letters, 64 (12). 1561-1563 doi:10.1063/1.111865
	Basmaji, P., Guittard, M., Rudra, A., Carlin, J. F., Gibart, P. (1987) GaAs tunnel junction grown by metalorganic vapor‐phase epitaxy for multigap cascade solar cells. Journal of Applied Physics, 62 (5). 2103-2106 doi:10.1063/1.339528
	Olsthoorn, S. M., Driessen, F. A. J. M., Giling, L. J. (1991) Excitonic photoluminescence spectra of AlxGa1−xAs grown by metalorganic vapor phase epitaxy. Applied Physics Letters, 58 (12). 1274-1276 doi:10.1063/1.104334
	El Jani, B., Köhler, K., N’Guessan, K., Bel Hadj, A., Gibart, P. (1988) Shallow and deep donors inn‐type Ga1−xAlxAs: Sn grown by metalorganic vapor‐phase epitaxy. Journal of Applied Physics, 63 (9). 4518-4523 doi:10.1063/1.340149
	Li, G., Petravić, M., Jagadish, C. (1996) Very high carbon δ ‐doping concentration in AlxGa1−xAs grown by metalorganic vapor phase epitaxy using trimethylaluminum as a doping precursor. Journal of Applied Physics, 79 (7). 3554-3559 doi:10.1063/1.361377
	*Basmaji, P. (1991) Selenium‐DXcenter‐doped AlxGa1−xAs grown by molecular beam epitaxy. Journal of Applied Physics, 70 (5). 2866-2867 doi:10.1063/1.349350*
	Olsthoorn, S. M., Driessen, F. A. J. M., Giling, L. J., Frigo, D. M., Smit, C. J. (1992) Photoluminescence on high‐quality AlxGa1−xAs grown by metalorganic vapor‐phase epitaxy using alane bis(dimethylethylamine). Applied Physics Letters, 60 (1). 82-84 doi:10.1063/1.107382
	Bernussi, A.A., Iikawa, F., Motisuke, P., Basmaji, P. (1991) Properties of AlxGa1−xAs with an AlAs buffer layer on Si substrates grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 108 (3). 615-620 doi:10.1016/0022-0248(91)90240-6
	Xu, Xian’gang, Huang, Baibiao, Ren, Hongwen, Jiang, Minhua (1994) Smoothing effect of GaAs/AlxGa1−xAs superlattices grown by metalorganic vapor phase epitaxy. Applied Physics Letters, 64 (22). 2949-2951 doi:10.1063/1.111422

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Basmaji, P., Zaouk, A., Gibart, P., Gauthier, D., Portal, J. C. (1989) Enhancement of free‐carrier concentration inn‐type AlxGa1−xAs grown by metalorganic vapor phase epitaxy in the temperature range 850–950 °C. Applied Physics Letters, 54 (12). 1121-1123 doi:10.1063/1.100775

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