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Schowengerdt, F. D., Lin, T. L., Fathauer, R. W., Grunthaner, P. J. (1989) Diffusion of Si in thin CoSi2layers. Applied Physics Letters, 54 (14). 1314-1316 doi:10.1063/1.101399

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Reference TypeJournal (article/letter/editorial)
TitleDiffusion of Si in thin CoSi2layers
JournalApplied Physics Letters
AuthorsSchowengerdt, F. D.Author
Lin, T. L.Author
Fathauer, R. W.Author
Grunthaner, P. J.Author
Year1989 (April 3)Volume54
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.101399Search in ResearchGate
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Mindat Ref. ID8486192Long-form Identifiermindat:1:5:8486192:8
GUID0
Full ReferenceSchowengerdt, F. D., Lin, T. L., Fathauer, R. W., Grunthaner, P. J. (1989) Diffusion of Si in thin CoSi2layers. Applied Physics Letters, 54 (14). 1314-1316 doi:10.1063/1.101399
Plain TextSchowengerdt, F. D., Lin, T. L., Fathauer, R. W., Grunthaner, P. J. (1989) Diffusion of Si in thin CoSi2layers. Applied Physics Letters, 54 (14). 1314-1316 doi:10.1063/1.101399
In(1989, April) Applied Physics Letters Vol. 54 (14) AIP Publishing

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Schowengerdt, F. D., Lin, T. L., Fathauer, R. W., Grunthaner, P. J. (1989) Response to ‘‘Comment on ‘Diffusion of Si in thin CoSi2layers’ ’’ [Appl. Phys. Lett.55, 1804 (1989)]. Applied Physics Letters, 55 (17). 1804-1805 doi:10.1063/1.102325
Schowengerdt, F. D., Lin, T. L., Fathauer, R. W., Grunthaner, P. J. (1989) Characterization of Si/CoSi2/Si(111) heterostructures using Auger plasmon losses. Journal of Applied Physics, 65 (9). 3531-3538 doi:10.1063/1.342627
d’Heurle, F. M. (1989) Comment on ‘‘Diffusion of Si in thin CoSi2layers’’ [Appl. Phys. Lett.54, 1314 (1989)]. Applied Physics Letters, 55 (17). 1804 doi:10.1063/1.102324
Lin, T. L., Fathauer, R. W., Grunthaner, P. J. (1989) Heavily boron‐doped Si layers grown below 700 °C by molecular beam epitaxy using a HBO2source. Applied Physics Letters, 55 (8). 795-797 doi:10.1063/1.101763
Lin, T. L., Fathauer, R. W., Grunthaner, P. J., d’Anterroches, C. (1988) Room‐temperature codeposition growth technique for pinhole reduction in epitaxial CoSi2on Si (111). Applied Physics Letters, 52 (10). 804-806 doi:10.1063/1.99289
Jimenez, J. R., Wu, Z.‐C., Schowalter, L. J., Hunt, B. D., Fathauer, R. W., Grunthaner, P. J., Lin, T. L. (1989) Optical properties of epitaxial CoSi2and NiSi2films on silicon. Journal of Applied Physics, 66 (6). 2738-2741 doi:10.1063/1.344217
Fathauer, R. W., Lin, T. L., Grunthaner, P. J., Andersson, P. O., Iannelli, J. M., Jamieson, D. N. (1988) Increased effective barrier heights in Schottky diodes by molecular‐beam epitaxy of CoSi2and Ga‐doped Si on Si(111). Journal of Applied Physics, 64 (8). 4082-4085 doi:10.1063/1.341315
d’Anterroches, Cecile, Yakupoglu, H. Nejat, Lin, T. L., Fathauer, R. W., Grunthaner, P. J. (1988) Transmission electron microscopy study of the formation of epitaxial CoSi2/Si (111) by a room‐temperature codeposition technique. Applied Physics Letters, 52 (6). 434-436 doi:10.1063/1.99434
Vasquez, R. P., Fathauer, R. W., George, T., Ksendzov, A., Lin, T. L. (1992) Electronic structure of light‐emitting porous Si. Applied Physics Letters, 60 (8). 1004-1006 doi:10.1063/1.106503
George, T., Anderson, M. S., Pike, W. T., Lin, T. L., Fathauer, R. W., Jung, K. H., Kwong, D. L. (1992) Microstructural investigations of light‐emitting porous Si layers. Applied Physics Letters, 60 (19). 2359-2361 doi:10.1063/1.107025
Tung, R. T., Batstone, J. L. (1988) Control of pinholes in epitaxial CoSi2layers on Si(111). Applied Physics Letters, 52 (8). 648-650 doi:10.1063/1.99393
 
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