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Jen, H. R., Cao, D. S., Stringfellow, G. B. (1989) Long‐range [111] ordering in GaAs1−xPx. Applied Physics Letters, 54 (19). 1890-1892 doi:10.1063/1.101232

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Reference TypeJournal (article/letter/editorial)
TitleLong‐range [111] ordering in GaAs1−xPx
JournalApplied Physics Letters
AuthorsJen, H. R.Author
Cao, D. S.Author
Stringfellow, G. B.Author
Year1989 (May 8)Volume54
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.101232Search in ResearchGate
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Mindat Ref. ID8486506Long-form Identifiermindat:1:5:8486506:7
GUID0
Full ReferenceJen, H. R., Cao, D. S., Stringfellow, G. B. (1989) Long‐range [111] ordering in GaAs1−xPx. Applied Physics Letters, 54 (19). 1890-1892 doi:10.1063/1.101232
Plain TextJen, H. R., Cao, D. S., Stringfellow, G. B. (1989) Long‐range [111] ordering in GaAs1−xPx. Applied Physics Letters, 54 (19). 1890-1892 doi:10.1063/1.101232
In(1989, May) Applied Physics Letters Vol. 54 (19) AIP Publishing

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Jen, H. R., Ma, K. Y., Stringfellow, G. B. (1989) Long‐range order in InAsSb. Applied Physics Letters, 54 (12). 1154-1156 doi:10.1063/1.100746
Cao, D. S., Chen, C. H., Fry, K. L., Reihlen, E. H., Stringfellow, G. B. (1989) Strained‐layer superlattices for reduction of dislocation density in GaAs1−xPxon GaAs by organometallic vapor‐phase epitaxy. Journal of Applied Physics, 65 (6). 2451-2456 doi:10.1063/1.343415
Holonyak, N., Scifres, D. R., Burnham, R. D., Craford, M. G., Groves, W. O., Herzog, A. H. (1971) Stimulated Emission Involving the Nitrogen Isoelectronic Trap in GaAs1−xPx. Applied Physics Letters, 19 (8). 254-256 doi:10.1063/1.1653907
Jaw, D. H., Chen, G. S., Stringfellow, G. B. (1991) Atomic ordering in InAs0.5P0.5grown by organometallic vapor phase epitaxy. Applied Physics Letters, 59 (1). 114-116 doi:10.1063/1.105563
Lee, M. H., Holonyak, N., Campbell, J. C., Groves, W. O., Craford, M. G., Keune, D. L. (1974) Spontaneous and stimulated carrier lifetimes (77°K) in GaAs1−xPx and GaAs1−xPx : N. Applied Physics Letters, 24 (7). 310-313 doi:10.1063/1.1655196
Chen, G. S., Jaw, D. H., Stringfellow, G. B. (1991) Atomic ordering in GaAsP. Journal of Applied Physics, 69 (8). 4263-4272 doi:10.1063/1.348398
Ostermayer, F. W., Allen, R. B., Dierschke, E. G. (1971) Room‐Temperature cw Operation of a GaAs1−xPx Diode‐Pumped YAG:Nd Laser. Applied Physics Letters, 19 (8). 289-292 doi:10.1063/1.1653922
Hobson, William S., Johnson, Phelps B., Ellis, Arthur B., Biefeld, R. M. (1984) Photoluminescent and electroluminescent properties of GaAs1−xPx‐GaAs1−yPyisotype heterojunction electrodes. Applied Physics Letters, 45 (2). 150-152 doi:10.1063/1.95149
Chen, G. S., Jaw, D. H., Stringfellow, G. B. (1990) Effects of substrate misorientation on ordering in GaAs0.5P0.5grown by organometallic vapor phase epitaxy. Applied Physics Letters, 57 (23). 2475-2477 doi:10.1063/1.103834
Edmonds, H. D., Smith, A. W. (1973) Radiative lifetime in GaAs1−xPx p‐n junctions. Applied Physics Letters, 23 (7). 382-384 doi:10.1063/1.1654927
Holonyak, N., Scifres, D. R., Craford, M. G., Groves, W. O., Keune, D. L. (1971) Stimulated Emission in an Indirect Semiconductor: N Isoelectronic Trap‐Assisted Recombination in GaAs1−xPx (x > 0.44). Applied Physics Letters, 19 (8). 256-258 doi:10.1063/1.1653908
 
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