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Jen, H. R., Ma, K. Y., Stringfellow, G. B. (1989) Long‐range order in InAsSb. Applied Physics Letters, 54 (12). 1154-1156 doi:10.1063/1.100746

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Reference TypeJournal (article/letter/editorial)
TitleLong‐range order in InAsSb
JournalApplied Physics Letters
AuthorsJen, H. R.Author
Ma, K. Y.Author
Stringfellow, G. B.Author
Year1989 (March 20)Volume54
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.100746Search in ResearchGate
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Mindat Ref. ID8486019Long-form Identifiermindat:1:5:8486019:6
GUID0
Full ReferenceJen, H. R., Ma, K. Y., Stringfellow, G. B. (1989) Long‐range order in InAsSb. Applied Physics Letters, 54 (12). 1154-1156 doi:10.1063/1.100746
Plain TextJen, H. R., Ma, K. Y., Stringfellow, G. B. (1989) Long‐range order in InAsSb. Applied Physics Letters, 54 (12). 1154-1156 doi:10.1063/1.100746
In(1989, March) Applied Physics Letters Vol. 54 (12) AIP Publishing

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Jen, H. R., Cao, D. S., Stringfellow, G. B. (1989) Long‐range [111] ordering in GaAs1−xPx. Applied Physics Letters, 54 (19). 1890-1892 doi:10.1063/1.101232
Fang, Z. M., Ma, K. Y., Jaw, D. H., Cohen, R. M., Stringfellow, G. B. (1990) Photoluminescence of InSb, InAs, and InAsSb grown by organometallic vapor phase epitaxy. Journal of Applied Physics, 67 (11). 7034-7039 doi:10.1063/1.345050
Cherng, Y. T., Jou, M. J., Jen, H. R., Stringfellow, G. B. (1988) Raman scattering in GaP1−xSbx. Journal of Applied Physics, 63 (11). 5444-5446 doi:10.1063/1.340365
Ma, K. Y., Fang, Z. M., Jaw, D. H., Cohen, R. M., Stringfellow, G. B., Kosar, W. P., Brown, D. W. (1989) Organometallic vapor phase epitaxial growth and characterization of InAsBi and InAsSbBi. Applied Physics Letters, 55 (23). 2420-2422 doi:10.1063/1.102033
Jen, H. R., Cherng, M. J., Stringfellow, G. B. (1986) Ordered structures in GaAs0.5Sb0.5alloys grown by organometallic vapor phase epitaxy. Applied Physics Letters, 48 (23). 1603-1605 doi:10.1063/1.96830
Cherng, Y. T., Ma, K. Y., Stringfellow, G. B. (1988) Raman scattering in InAs1−xSbxgrown by organometallic vapor phase epitaxy. Applied Physics Letters, 53 (10). 886-887 doi:10.1063/1.100104
Jou, M. J., Cherng, Y. T., Jen, H. R., Stringfellow, G. B. (1988) Organometallic vapor phase epitaxial growth of a new semiconductor alloy: GaP1−xSbx. Applied Physics Letters, 52 (7). 549-551 doi:10.1063/1.99413
Fang, Z. M., Ma, K. Y., Cohen, R. M., Stringfellow, G. B. (1991) Effect of growth temperature on photoluminescence of InAs grown by organometallic vapor phase epitaxy. Applied Physics Letters, 59 (12). 1446-1448 doi:10.1063/1.105283
Jaw, D. H., Cherng, Y. T., Stringfellow, G. B. (1989) Long‐wavelength lattice dynamics of GaxIn1−xAsySb1−yquaternary alloys. Journal of Applied Physics, 66 (5). 1965-1969 doi:10.1063/1.344333
Casey, H. C., McCalmont, J. S., Pandharpurkar, H., Wang, T. Y., Stringfellow, G. B. (1989) Current‐voltage and capacitance‐voltage behavior of high‐resistivity (AlxGa1−x)yIn1−yP on GaAs. Applied Physics Letters, 54 (7). 650-652 doi:10.1063/1.100907
Wang, T. Y., Reihlen, E. H., Jen, H. R., Stringfellow, G. B. (1989) Systematic studies on the effect of growth interruptions for GaInAs/InP quantum wells grown by atmospheric pressure organometallic vapor‐phase epitaxy. Journal of Applied Physics, 66 (11). 5376-5383 doi:10.1063/1.343681
 
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