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Jamison, K. D., Bensaoula, A., Ignatiev, A., Huang, C. F., Chan, W. S. (1989) Epitaxial growth of InSb (111) on sapphire (0001). Applied Physics Letters, 54 (19). 1916-1917 doi:10.1063/1.101240

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Reference TypeJournal (article/letter/editorial)
TitleEpitaxial growth of InSb (111) on sapphire (0001)
JournalApplied Physics Letters
AuthorsJamison, K. D.Author
Bensaoula, A.Author
Ignatiev, A.Author
Huang, C. F.Author
Chan, W. S.Author
Year1989 (May 8)Volume54
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.101240Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8486522Long-form Identifiermindat:1:5:8486522:5
GUID0
Full ReferenceJamison, K. D., Bensaoula, A., Ignatiev, A., Huang, C. F., Chan, W. S. (1989) Epitaxial growth of InSb (111) on sapphire (0001). Applied Physics Letters, 54 (19). 1916-1917 doi:10.1063/1.101240
Plain TextJamison, K. D., Bensaoula, A., Ignatiev, A., Huang, C. F., Chan, W. S. (1989) Epitaxial growth of InSb (111) on sapphire (0001). Applied Physics Letters, 54 (19). 1916-1917 doi:10.1063/1.101240
In(1989, May) Applied Physics Letters Vol. 54 (19) AIP Publishing

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Miyazaki, T., Mori, M., Adachi, S. (1991) Epitaxial growth of InSb on sapphire by rf sputtering. Applied Physics Letters, 58 (2). 116-118 doi:10.1063/1.104972
Resh, J., Jamison, K. D., Strozier, J., Bensaoula, A., Ignatiev, A. (1989) Phase of reflection high-energy electron-diffraction intensity oscillations during molecular-beam-epitaxy growth of GaAs(100) Physical Review B, 40 (17) 11799-11803 doi:10.1103/physrevb.40.11799
Chyi, J.‐I., Biswas, D., Iyer, S. V., Kumar, N. S., Morkoç, H., Bean, R., Zanio, K., Lee, H.‐Y., Chen, Haydn (1989) Molecular beam epitaxial growth and characterization of InSb on Si. Applied Physics Letters, 54 (11). 1016-1018 doi:10.1063/1.100784
Durfee, C. S., Flynn, C. P. (2000) Phase diagram of epitaxial ferromagnets: Erbium (0001) on sapphire (112̄0). Applied Physics Letters, 77 (16). 2527-2529 doi:10.1063/1.1319182
Bhosle, V., Narayan, J. (2007) Epitaxial growth and magnetic properties of La0.7Sr0.3MnO3 films on (0001) sapphire. Applied Physics Letters, 90 (10). 101903pp. doi:10.1063/1.2472537
Tian, W., Pan, X. Q., Bu, S. D., Kim, D. M., Choi, J. H., Patnaik, S., Eom, C. B. (2002) Interfacial structure of epitaxial MgB2 thin films grown on (0001) sapphire. Applied Physics Letters, 81 (4). 685-687 doi:10.1063/1.1489101
Gupta, R.K., Yakuphanoglu, F. (2011) Epitaxial growth of MgFe2O4 (111) thin films on sapphire (0001) substrate. Materials Letters, 65. 3058-3060 doi:10.1016/j.matlet.2011.06.091
Shih, C. F., Chen, N. C., Lin, S. Y., Liu, K. S. (2005) AlGaN films grown on (0001) sapphire by a two-step method. Applied Physics Letters, 86 (21). 211103pp. doi:10.1063/1.1931058
Bensaoula, Abdelhak, Wolfe, J. C., Oro, James A., Ignatiev, A. (1983) Deposition and reactive ion etching of molybdenum. Applied Physics Letters, 42 (1). 122-123 doi:10.1063/1.93743
Humphreys, T. P., Miner, C. J., Posthill, J. B., Das, K., Summerville, M. K., Nemanich, R. J., Sukow, C. A., Parikh, N. R. (1989) Heteroepitaxial growth and characterization of GaAs on silicon‐on‐sapphire and sapphire substrates. Applied Physics Letters, 54 (17). 1687-1689 doi:10.1063/1.101303
d’Avitaya, F. Arnaud, Perio, A., Oberlin, J.‐C., Campidelli, Y., Chroboczek, J. A. (1989) Fabrication and structure of epitaxial Er silicide films on (111) Si. Applied Physics Letters, 54 (22). 2198-2200 doi:10.1063/1.101517
 
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