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Fischer, D. W., Manasreh, M. O. (1989) Temperature dependence of the photoinduced EL2*→EL20recovery process observed by infrared absorption. Applied Physics Letters, 54 (20). 2018-2020 doi:10.1063/1.101178

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Reference TypeJournal (article/letter/editorial)
TitleTemperature dependence of the photoinduced EL2*→EL20recovery process observed by infrared absorption
JournalApplied Physics Letters
AuthorsFischer, D. W.Author
Manasreh, M. O.Author
Year1989 (May 15)Volume54
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.101178Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8486656Long-form Identifiermindat:1:5:8486656:1
GUID0
Full ReferenceFischer, D. W., Manasreh, M. O. (1989) Temperature dependence of the photoinduced EL2*→EL20recovery process observed by infrared absorption. Applied Physics Letters, 54 (20). 2018-2020 doi:10.1063/1.101178
Plain TextFischer, D. W., Manasreh, M. O. (1989) Temperature dependence of the photoinduced EL2*→EL20recovery process observed by infrared absorption. Applied Physics Letters, 54 (20). 2018-2020 doi:10.1063/1.101178
In(1989, May) Applied Physics Letters Vol. 54 (20) AIP Publishing

See Also

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Manasreh, M. O., Mitchel, W. C., Fischer, D. W. (1989) Observation of the second energy level of the EL2 defect in GaAs by the infrared absorption technique. Applied Physics Letters, 55 (9). 864-866 doi:10.1063/1.101623
Manasreh, M. O., Fischer, D. W. (1988) Infrared absorption of electron irradiation induced deep defects in semi‐insulating GaAs. Applied Physics Letters, 53 (24). 2429-2431 doi:10.1063/1.100229
Manasreh, M. O., Szmulowicz, F., Fischer, D. W., Evans, K. R., Stutz, C. E. (1990) Intersubband infrared absorption in a GaAs/Al0.3Ga0.7As quantum well structure. Applied Physics Letters, 57 (17). 1790-1792 doi:10.1063/1.104023
Manasreh, M. O., Fischer, D. W., Mitchel, W. C. (1989) The EL2 Defect in GaAs: Some Recent Developments. physica status solidi (b), 154 (1). 11-41 doi:10.1002/pssb.2221540102
Manasreh, M. O., Fischer, D. W. (1989) Electron-irradiation effects on the infrared absorption properties of theEL2 defect in GaAs. Physical Review B, 39 (6) 3871-3874 doi:10.1103/physrevb.39.3871
Fischer, D. W., Manasreh, M. O., Matous, G. (1993) Hydrogen‐iron interaction in proton‐implanted InP:Fe. Applied Physics Letters, 63 (22). 3038-3039 doi:10.1063/1.110251
Manasreh, M. O., Fischer, D. W. (1989) Infrared absorption properties of theEL2 and the isolatedAsGadefects in neutron-transmutation-doped GaAs: Generation of anEL2-like defect. Physical Review B, 39 (5) 3239-3249 doi:10.1103/physrevb.39.3239
Fischer, D. W., Manasreh, M. O. (1990) The effect of charge state on the local vibrational mode absorption of the carbon acceptor in semi‐insulating GaAs. Journal of Applied Physics, 68 (5). 2504-2506 doi:10.1063/1.346516
Manasreh, M. O., Fischer, D. W. (1989) Photoquenching and photoinduced-recovery properties of theEL2defect in GaAs: Evidence against the identification ofEL2with the isolatedAsGadefect. Physical Review B, 39 (17) 13001-13004 doi:10.1103/physrevb.39.13001
Fischer, David W. (1987) Photon‐induced recovery of photoquenched EL2 intracenter absorption in GaAs. Applied Physics Letters, 50 (24). 1751-1753 doi:10.1063/1.97736
Fischer, David W. (1984) Temperature dependence of boron infrared‐absorption line intensity in extrinsic silicon. Journal of Applied Physics, 56 (10). 2984-2985 doi:10.1063/1.333769
 
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