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Manasreh, M. O., Fischer, D. W. (1988) Infrared absorption of electron irradiation induced deep defects in semi‐insulating GaAs. Applied Physics Letters, 53 (24). 2429-2431 doi:10.1063/1.100229

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Reference TypeJournal (article/letter/editorial)
TitleInfrared absorption of electron irradiation induced deep defects in semi‐insulating GaAs
JournalApplied Physics Letters
AuthorsManasreh, M. O.Author
Fischer, D. W.Author
Year1988 (December 12)Volume53
Issue24
PublisherAIP Publishing
DOIdoi:10.1063/1.100229Search in ResearchGate
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Mindat Ref. ID8485105Long-form Identifiermindat:1:5:8485105:5
GUID0
Full ReferenceManasreh, M. O., Fischer, D. W. (1988) Infrared absorption of electron irradiation induced deep defects in semi‐insulating GaAs. Applied Physics Letters, 53 (24). 2429-2431 doi:10.1063/1.100229
Plain TextManasreh, M. O., Fischer, D. W. (1988) Infrared absorption of electron irradiation induced deep defects in semi‐insulating GaAs. Applied Physics Letters, 53 (24). 2429-2431 doi:10.1063/1.100229
In(1988, December) Applied Physics Letters Vol. 53 (24) AIP Publishing

See Also

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Fischer, D. W., Manasreh, M. O. (1990) The effect of charge state on the local vibrational mode absorption of the carbon acceptor in semi‐insulating GaAs. Journal of Applied Physics, 68 (5). 2504-2506 doi:10.1063/1.346516
Fischer, D. W., Manasreh, M. O. (1991) Response to: ‘‘Comment on ‘The effect of charge state on the local vibrational mode absorption of the carbon acceptor in semi‐insulating GaAs’ ’’. Journal of Applied Physics, 69 (9). 6733-6734 doi:10.1063/1.348899
Manasreh, M. O., Fischer, D. W. (1989) Electron-irradiation effects on the infrared absorption properties of theEL2 defect in GaAs. Physical Review B, 39 (6) 3871-3874 doi:10.1103/physrevb.39.3871
Manasreh, M. O., Mitchel, W. C., Fischer, D. W. (1989) Observation of the second energy level of the EL2 defect in GaAs by the infrared absorption technique. Applied Physics Letters, 55 (9). 864-866 doi:10.1063/1.101623
Manasreh, M. O., Szmulowicz, F., Fischer, D. W., Evans, K. R., Stutz, C. E. (1990) Intersubband infrared absorption in a GaAs/Al0.3Ga0.7As quantum well structure. Applied Physics Letters, 57 (17). 1790-1792 doi:10.1063/1.104023
Fischer, D. W., Manasreh, M. O. (1989) Temperature dependence of the photoinduced EL2*→EL20recovery process observed by infrared absorption. Applied Physics Letters, 54 (20). 2018-2020 doi:10.1063/1.101178
Manasreh, M. O., Fischer, D. W., Covington, B. C. (1988) Neutron irradiation effects on the infrared absorption of theEL2 defect in GaAs: New interpretation for the intracenter transition. Physical Review B, 37 (11) 6567-6570 doi:10.1103/physrevb.37.6567
Queisser, Hans J. (1985) Reversal of contrast for infrared absorption of deep levels in semi‐insulating GaAs. Applied Physics Letters, 46 (8). 757-759 doi:10.1063/1.95498
von Bardeleben, H. J., Bourgoin, J. C., Stievenard, D. (1988) Compensation mechanism in semi‐insulating GaAs: The role of intrinsic acceptor defects. Applied Physics Letters, 53 (12). 1089-1091 doi:10.1063/1.100030
Kuriyama, K., Takahashi, Hirokazu, Irie, Y., Kawakubo, T. (1991) Annealing behavior of photoconductance relating to electron‐irradiation‐induced defects in semi‐insulating GaAs. Journal of Applied Physics, 70 (2). 1051-1053 doi:10.1063/1.349693
Goltzene, A., Meyer, B., Schwab, C. (1982) Electron paramagnetic resonance of extended defects in semi‐insulating GaAs. Journal of Applied Physics, 53 (6). 4541-4543 doi:10.1063/1.331200
 
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