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(1988, December) Applied Physics Letters Vol. 53 (24) AIP Publishing

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Reference TypeJournal (issue)
JournalApplied Physics Letters
Year1988 (December)Volume53
Issue<   24   >
PublisherAIP Publishing
Mindat Ref. ID8485092Long-form Identifiermindat:1:5:8485092:2
GUID0
Full Reference(1988, December) Applied Physics Letters Vol. 53 (24) AIP Publishing
Plain Text(1988, December) Applied Physics Letters Vol. 53 (24) AIP Publishing
In(n.d.) Applied Physics Letters Vol. 53. AIP Publishing

Contains

Takizawa, Kuniharu, Okada, Masakatsu, Kikuchi, Hiroshi, Aida, Tahito (1988) Bistable spatial light modulator using liquid crystal and Bi12SiO20crystal layers. Applied Physics Letters, 53 (24). 2359-2361 doi:10.1063/1.100522
D’Ottavi, A., Mecozzi, A., Spano, P., Piazzolla, S. (1988) Time jitter in multimode Fabry–Perot laser diodes. Applied Physics Letters, 53 (24). 2362-2364 doi:10.1063/1.100230
Gross, R. W. F., Schneider, L. E., Amimoto, S. T. (1988) XeF laser pumped by high‐power sliding discharges. Applied Physics Letters, 53 (24). 2365-2367 doi:10.1063/1.100231
Bulmer, C. H. (1988) Sensitive, highly linear lithium niobate interferometers for electromagnetic field sensing. Applied Physics Letters, 53 (24). 2368-2370 doi:10.1063/1.100232
Bour, D. P., Gilbert, D. B., Elbaum, L., Harvey, M. G. (1988) Continuous, high‐power operation of a strained InGaAs/AlGaAs quantum well laser. Applied Physics Letters, 53 (24). 2371-2373 doi:10.1063/1.100233
Sinclair, M., McBranch, D., Moses, D., Heeger, A. J. (1988) Time‐resolved waveguide modulation of a conjugated polymer. Applied Physics Letters, 53 (24). 2374-2376 doi:10.1063/1.100234
Mahan, G. D., Cole, H. S., Liu, Y. S., Philipp, H. R. (1988) Theory of polymer ablation. Applied Physics Letters, 53 (24). 2377-2379 doi:10.1063/1.100235
DeFreez, R. K., Bossert, D. J., Yu, N., Hartnett, K., Elliott, R. A., Winful, H. G. (1988) Spectral and picosecond temporal properties of flared guide Y‐coupled phase‐locked laser arrays. Applied Physics Letters, 53 (24). 2380-2382 doi:10.1063/1.100236
Coe, S. E., Willi, O., Afshar‐Rad, T., Rose, S. J. (1988) Study of shock coalescence in laser‐irradiated targets. Applied Physics Letters, 53 (24). 2383-2385 doi:10.1063/1.100237
Dirne, F. W. A., den Broeder, F. J. A., Tolboom, J. A. M., de Wit, H. J., Witmer, C. H. M. (1988) Soft‐magnetic properties and structure of Fe/CoNbZr multilayers. Applied Physics Letters, 53 (24). 2386-2388 doi:10.1063/1.100238
Razeghi, M., Defour, M., Blondeau, R., Omnes, F., Maurel, P., Acher, O., Brillouet, F., C‐Fan, J. C., Salerno, J. (1988) First cw operation of a Ga0.25In0.75As0.5P0.5‐InP laser on a silicon substrate. Applied Physics Letters, 53 (24). 2389-2390 doi:10.1063/1.100239
Yamada‐Kaneta, Hiroshi, Ogawa, Tsutomu, Muraishi, Shuichi, Kaneta, Chioko, Wada, Kunihiko (1988) Far‐infrared absorption by oxygen in silicon. Applied Physics Letters, 53 (24). 2391-2393 doi:10.1063/1.100240
Lee, Henry P., Liu, Xiaoming, Lin, Hong, Smith, John S., Wang, Shyh, Huang, Yi‐He, Yu, Peter, Huang, Yi‐Zhu (1988) Tensile stress variations of chemically etched GaAs films grown on Si substrates. Applied Physics Letters, 53 (24). 2394-2396 doi:10.1063/1.100241
Xue, Jiuzhi, Clark, Noel A., Meadows, Michael R. (1988) Surface orientation transitions in surface stabilized ferroelectric liquid crystal structures. Applied Physics Letters, 53 (24). 2397-2399 doi:10.1063/1.100242
Meyer, Gerhard, Amer, Nabil M. (1988) Erratum: Novel optical approach to atomic force microscopy [Appl. Phys. Lett. 53, 1045 (1988)]. Applied Physics Letters, 53 (24). 2400-2402 doi:10.1063/1.100425
Yodo, Tokuo, Yamashita, Ken (1988) Li‐doped ZnSe epitaxial layers by ion implantation. Applied Physics Letters, 53 (24). 2403-2405 doi:10.1063/1.100243
Roskos, H., Rieck, B., Seilmeier, A., Kaiser, W. (1988) Cooling of a carrier plasma in germanium investigated with subpicosecond infrared pulses. Applied Physics Letters, 53 (24). 2406-2408 doi:10.1063/1.100244
Zahn, D. R. T., Williams, R. H., Golding, T. D., Dinan, J. H., Mackey, K. J., Geurts, J., Richter, W. (1988) Raman spectroscopy of InSb/CdTe heterostructures: Improved interface quality obtained by Cd overpressure during molecular beam epitaxial growth. Applied Physics Letters, 53 (24). 2409-2410 doi:10.1063/1.100245
Tejwani, M. J., Kanber, H., Paine, B. M., Whelan, J. M. (1988) Growth and diffusion of abrupt beryllium‐doped profiles in gallium arsenide by organometallic vapor phase epitaxy. Applied Physics Letters, 53 (24). 2411-2413 doi:10.1063/1.100412
Petruzzello, J., Leys, M. R. (1988) Effect of the sign of misfit strain on the dislocation structure at interfaces of heteroepitaxial GaAsxP1−xfilms. Applied Physics Letters, 53 (24). 2414-2416 doi:10.1063/1.100246
Patil, M. B., Mui, D., Kalem, S., Morkoç, H. (1988) Reduced backgating effect in modulation‐doped field‐effect transistors byp‐njunction isolation. Applied Physics Letters, 53 (24). 2417-2419 doi:10.1063/1.100226
Schulman, J. N., Wu, O. K., Patten, E. A., Han, Jeong W., Lansari, Y., Kim, L. S., Cook, J. W., Schetzina, J. F. (1988) Light hole interband transitions in HgTe‐HgCdTe superlattices. Applied Physics Letters, 53 (24). 2420-2422 doi:10.1063/1.100227
Chu, P., Lin, C. L., Wieder, H. H. (1988) Schottky barrier height of InxAl1−xAs epitaxial and strained layers. Applied Physics Letters, 53 (24). 2423-2425 doi:10.1063/1.100228
Freeouf, J. L. (1988) Application of spectroscopic ellipsometry to complex samples. Applied Physics Letters, 53 (24). 2426-2428 doi:10.1063/1.100411
Manasreh, M. O., Fischer, D. W. (1988) Infrared absorption of electron irradiation induced deep defects in semi‐insulating GaAs. Applied Physics Letters, 53 (24). 2429-2431 doi:10.1063/1.100229
Stirland, D. J. (1988) Quantitative defect etching of GaAs on Si: Is it possible?. Applied Physics Letters, 53 (24). 2432-2434 doi:10.1063/1.100211
Kim, Jae‐Hoon, Liu, John K., Radhakrishnan, Gouri, Katz, Joseph, Sakai, Shiro, Chang, Shi S., El‐Masry, Nadia A. (1988) Growth and characterization of GaAs layers on Si substrates by migration‐enhanced molecular beam epitaxy. Applied Physics Letters, 53 (24). 2435-2437 doi:10.1063/1.100212
Lee, B., Bose, S. S., Kim, M. H., Stillman, G. E., Calawa, A. R. (1988) Spectroscopic studies of the influence of intentionally increased CO partial pressure on the incorporation of residual C impurities in molecular beam epitaxy GaAs. Applied Physics Letters, 53 (24). 2438-2440 doi:10.1063/1.100410
Robertazzi, R. P., Buhrman, R. A. (1988) NbN Josephson tunnel junctions for terahertz local oscillators. Applied Physics Letters, 53 (24). 2441-2443 doi:10.1063/1.100213
Takeuchi, T., Iijima, Y., Kosuge, M., Inoue, K., Watanabe, K., Noto, K. (1988) Pinning mechanism in a continuous ultrafine Nb3Al multifilamentary superconductor. Applied Physics Letters, 53 (24). 2444-2446 doi:10.1063/1.100523
Heinzelmann, H., Anselmetti, D., Wiesendanger, R., Güntherodt, H.‐J., Kaldis, E., Wisard, A. (1988) Topography and local modification of the HoBa2Cu3O7−x(001) surface using scanning tunneling microscopy. Applied Physics Letters, 53 (24). 2447-2449 doi:10.1063/1.100524
Hung, L. S., Agostinelli, J. A., Paz‐Pujalt, G. R., Mir, J. M. (1988) Growth of superconducting Bi2Sr2CaCu2O8+xfilms on alumina, silicon, and fused quartz. Applied Physics Letters, 53 (24). 2450-2452 doi:10.1063/1.100525
Reim, W., Weller, D. (1988) Kerr rotation enhancement in metallic bilayer thin films for magneto‐optical recording. Applied Physics Letters, 53 (24). 2453-2454 doi:10.1063/1.100526

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