Watch the Dallas Symposium LIVE, and fundraiser auction
Ticket proceeds support mindat.org! - click here...
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Tejwani, M. J., Kanber, H., Paine, B. M., Whelan, J. M. (1988) Growth and diffusion of abrupt beryllium‐doped profiles in gallium arsenide by organometallic vapor phase epitaxy. Applied Physics Letters, 53 (24). 2411-2413 doi:10.1063/1.100412

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleGrowth and diffusion of abrupt beryllium‐doped profiles in gallium arsenide by organometallic vapor phase epitaxy
JournalApplied Physics Letters
AuthorsTejwani, M. J.Author
Kanber, H.Author
Paine, B. M.Author
Whelan, J. M.Author
Year1988 (December 12)Volume53
Issue24
PublisherAIP Publishing
DOIdoi:10.1063/1.100412Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8485144Long-form Identifiermindat:1:5:8485144:4
GUID0
Full ReferenceTejwani, M. J., Kanber, H., Paine, B. M., Whelan, J. M. (1988) Growth and diffusion of abrupt beryllium‐doped profiles in gallium arsenide by organometallic vapor phase epitaxy. Applied Physics Letters, 53 (24). 2411-2413 doi:10.1063/1.100412
Plain TextTejwani, M. J., Kanber, H., Paine, B. M., Whelan, J. M. (1988) Growth and diffusion of abrupt beryllium‐doped profiles in gallium arsenide by organometallic vapor phase epitaxy. Applied Physics Letters, 53 (24). 2411-2413 doi:10.1063/1.100412
In(1988, December) Applied Physics Letters Vol. 53 (24) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Enquist, P., Hutchby, J. A., de Lyon, T. J. (1988) Growth and diffusion of abrupt zinc profiles in gallium arsenide and heterojunction bipolar transistor structures grown by organometallic vapor phase epitaxy. Journal of Applied Physics, 63 (9). 4485-4493 doi:10.1063/1.340143
Rosner, S. J., Amano, Jun, Lee, J. W., Fan, J. C. C. (1988) Initial growth of gallium arsenide on silicon by organometallic vapor phase epitaxy. Applied Physics Letters, 53 (12). 1101-1103 doi:10.1063/1.100033
Timmons, M. L., Ahrenkiel, R. K., Al‐Jassim, M. M., Dunlavy, D. J. (1988) Minority‐carrier lifetime measurements and defect‐structure identification for gallium arsenide grown on sapphire by organometallic vapor phase epitaxy. Journal of Applied Physics, 64 (11). 6259-6263 doi:10.1063/1.342084
Glade, M., Grützmacher, D., Meyer, R., Woelk, E. G., Balk, P. (1989) Activation of Zn and Cd acceptors in InP grown by metalorganic vapor phase epitaxy. Applied Physics Letters, 54 (24). 2411-2413 doi:10.1063/1.101091
Hobson, W. S., Pearton, S. J., Swaminathan, V., Jordan, A. S., Kanber, H., Kao, Y. J., Haegel, N. M. (1989) Role of vanadium in organometallic vapor phase epitaxy grown GaAs. Applied Physics Letters, 54 (18). 1772-1774 doi:10.1063/1.101287
Lamelas, F. J., Fuoss, P. H., Imperatori, P., Kisker, D. W., Stephenson, G. B., Brennan, S. (1992) Gallium arsenide surface reconstructions during organometallic vapor‐phase epitaxy. Applied Physics Letters, 60 (21). 2610-2612 doi:10.1063/1.106924
Foster, Douglas F., Glidewell, Christopher, Cole‐Hamilton, David J. (1993) Role of gas‐phase adducts in the growth of gallium arsenide by metalorganic vapor‐phase epitaxy. Applied Physics Letters, 63 (2). 214-215 doi:10.1063/1.110373
Schubert, E. F., Stark, J. B., Chiu, T. H., Tell, B. (1988) Diffusion of atomic silicon in gallium arsenide. Applied Physics Letters, 53 (4). 293-295 doi:10.1063/1.99917
Ghosh, C., Layman, R. L. (1984) Selective area growth of gallium arsenide by metalorganic vapor phase epitaxy. Applied Physics Letters, 45 (11). 1229-1231 doi:10.1063/1.95073
Jen, H. R., Cherng, M. J., Stringfellow, G. B. (1986) Ordered structures in GaAs0.5Sb0.5alloys grown by organometallic vapor phase epitaxy. Applied Physics Letters, 48 (23). 1603-1605 doi:10.1063/1.96830
Chen, C. H., Kitamura, M., Cohen, R. M., Stringfellow, G. B. (1986) Growth of ultrapure InP by atmospheric pressure organometallic vapor phase epitaxy. Applied Physics Letters, 49 (15). 963-965 doi:10.1063/1.97496
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: August 19, 2025 22:21:18
Go to top of page