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Hobson, W. S., Pearton, S. J., Swaminathan, V., Jordan, A. S., Kanber, H., Kao, Y. J., Haegel, N. M. (1989) Role of vanadium in organometallic vapor phase epitaxy grown GaAs. Applied Physics Letters, 54 (18). 1772-1774 doi:10.1063/1.101287

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Reference TypeJournal (article/letter/editorial)
TitleRole of vanadium in organometallic vapor phase epitaxy grown GaAs
JournalApplied Physics Letters
AuthorsHobson, W. S.Author
Pearton, S. J.Author
Swaminathan, V.Author
Jordan, A. S.Author
Kanber, H.Author
Kao, Y. J.Author
Haegel, N. M.Author
Year1989 (May)Volume54
Issue18
PublisherAIP Publishing
DOIdoi:10.1063/1.101287Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8486472Long-form Identifiermindat:1:5:8486472:1
GUID0
Full ReferenceHobson, W. S., Pearton, S. J., Swaminathan, V., Jordan, A. S., Kanber, H., Kao, Y. J., Haegel, N. M. (1989) Role of vanadium in organometallic vapor phase epitaxy grown GaAs. Applied Physics Letters, 54 (18). 1772-1774 doi:10.1063/1.101287
Plain TextHobson, W. S., Pearton, S. J., Swaminathan, V., Jordan, A. S., Kanber, H., Kao, Y. J., Haegel, N. M. (1989) Role of vanadium in organometallic vapor phase epitaxy grown GaAs. Applied Physics Letters, 54 (18). 1772-1774 doi:10.1063/1.101287
In(1989, May) Applied Physics Letters Vol. 54 (18) AIP Publishing

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Hobson, W. S., Pearton, S. J., Schubert, E. F., Cabaniss, G. (1989) Zinc delta doping of GaAs by organometallic vapor phase epitaxy. Applied Physics Letters, 55 (15). 1546-1548 doi:10.1063/1.102240
Hobson, W. S., Pearton, S. J., Kozuch, D. M., Stavola, M. (1992) Comparison of gallium and arsenic precursors for GaAs carbon doping by organometallic vapor phase epitaxy using CCl4. Applied Physics Letters, 60 (26). 3259-3261 doi:10.1063/1.106712
Hobson, W. S., Ren, F., Schnoes, M. Lamont, Sputz, S. K., Harris, T. D., Pearton, S. J., Abernathy, C. R., Jones, K. S. (1991) GaAs/AlGaAs quantum well and modulation‐doped heterostructures grown by organometallic vapor phase epitaxy using trimethylamine alane. Applied Physics Letters, 59 (16). 1975-1977 doi:10.1063/1.106154
Swaminathan, V., Chakrabarti, U. K., Hobson, W. S., Caruso, R., Lopata, J., Pearton, S. J., Luftman, H. S. (1990) A photoluminescence study of hydrogenated GaAs grown on an InP substrate by metalorganic chemical vapor deposition. Journal of Applied Physics, 68 (2). 902-905 doi:10.1063/1.346757
Chakrabarti, U. K., Pearton, S. J., Hobson, W. S., Lopata, J., Swaminathan, V. (1990) Hydrogenation of GaAs‐on‐InP. Applied Physics Letters, 57 (9). 887-889 doi:10.1063/1.103394
Hobson, W. S., Harris, T. D., Abernathy, C. R., Pearton, S. J. (1991) High quality AlxGa1−xAs grown by organometallic vapor phase epitaxy using trimethylamine alane as the aluminum precursor. Applied Physics Letters, 58 (1). 77-79 doi:10.1063/1.104450
Hobson, W. S., van der Ziel, J. P., Levi, A. F. J., O’Gorman, J., Abernathy, C. R., Geva, M., Luther, L. C., Swaminathan, V. (1991) Low‐threshold GaAs/AlGaAs quantum‐well lasers grown by organometallic vapor‐phase epitaxy using trimethylamine alane. Journal of Applied Physics, 70 (1). 432-435 doi:10.1063/1.350294
Von Neida, A. E., Pearton, S. J., Hobson, W. S., Abernathy, C. R. (1989) Interaction of Be and O in GaAs. Applied Physics Letters, 54 (16). 1540-1542 doi:10.1063/1.101344
Hobson, W. S., Pearton, S. J., Jordan, A. S. (1990) Redistribution of Zn in GaAs‐AlGaAs heterojunction bipolar transistor structures. Applied Physics Letters, 56 (13). 1251-1253 doi:10.1063/1.102528
Abernathy, C. R., Wisk, P. W., Pearton, S. J., Hobson, W. S., Fuoss, P. H., Lamelas, F. J., Chu, S. N. G., Ren, F. (1992) Thermal stability of GaAs (C)/InAs superlattices grown by metalorganic molecular beam epitaxy. Applied Physics Letters, 60 (11). 1339-1341 doi:10.1063/1.107336
Swaminathan, V., Asom, M. T., Livescu, G., Geva, M., Stevie, F. A., Pearton, S. J., Lopata, J. (1990) Hydrogen passivation of Si δ‐doped GaAs grown by molecular beam epitaxy. Applied Physics Letters, 57 (27). 2928-2930 doi:10.1063/1.103733
 
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