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Hobson, W. S., Pearton, S. J., Schubert, E. F., Cabaniss, G. (1989) Zinc delta doping of GaAs by organometallic vapor phase epitaxy. Applied Physics Letters, 55 (15). 1546-1548 doi:10.1063/1.102240

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Reference TypeJournal (article/letter/editorial)
TitleZinc delta doping of GaAs by organometallic vapor phase epitaxy
JournalApplied Physics Letters
AuthorsHobson, W. S.Author
Pearton, S. J.Author
Schubert, E. F.Author
Cabaniss, G.Author
Year1989 (October 9)Volume55
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.102240Search in ResearchGate
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Mindat Ref. ID8488101Long-form Identifiermindat:1:5:8488101:0
GUID0
Full ReferenceHobson, W. S., Pearton, S. J., Schubert, E. F., Cabaniss, G. (1989) Zinc delta doping of GaAs by organometallic vapor phase epitaxy. Applied Physics Letters, 55 (15). 1546-1548 doi:10.1063/1.102240
Plain TextHobson, W. S., Pearton, S. J., Schubert, E. F., Cabaniss, G. (1989) Zinc delta doping of GaAs by organometallic vapor phase epitaxy. Applied Physics Letters, 55 (15). 1546-1548 doi:10.1063/1.102240
In(1989, October) Applied Physics Letters Vol. 55 (15) AIP Publishing

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Pearton, S. J., Ren, F., Abernathy, C. R., Hobson, W. S., Chu, S. N. G., Kovalchick, J. (1989) Carbon and zinc delta doping for Schottky barrier enhancement onn‐type GaAs. Applied Physics Letters, 55 (13). 1342-1344 doi:10.1063/1.101650
Hobson, W. S., Pearton, S. J., Kozuch, D. M., Stavola, M. (1992) Comparison of gallium and arsenic precursors for GaAs carbon doping by organometallic vapor phase epitaxy using CCl4. Applied Physics Letters, 60 (26). 3259-3261 doi:10.1063/1.106712
Hobson, W. S., Pearton, S. J., Swaminathan, V., Jordan, A. S., Kanber, H., Kao, Y. J., Haegel, N. M. (1989) Role of vanadium in organometallic vapor phase epitaxy grown GaAs. Applied Physics Letters, 54 (18). 1772-1774 doi:10.1063/1.101287
Hobson, W. S., Ren, F., Schnoes, M. Lamont, Sputz, S. K., Harris, T. D., Pearton, S. J., Abernathy, C. R., Jones, K. S. (1991) GaAs/AlGaAs quantum well and modulation‐doped heterostructures grown by organometallic vapor phase epitaxy using trimethylamine alane. Applied Physics Letters, 59 (16). 1975-1977 doi:10.1063/1.106154
Abernathy, C. R., MacKenzie, J. D., Pearton, S. J., Hobson, W. S. (1995) CCl4 doping of GaN grown by metalorganic molecular beam epitaxy. Applied Physics Letters, 66 (15). 1969-1971 doi:10.1063/1.113293
Abernathy, C. R., Pearton, S. J., Caruso, R., Ren, F., Kovalchik, J. (1989) Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxy. Applied Physics Letters, 55 (17). 1750-1752 doi:10.1063/1.102206
Shurtleff, J. K., Jun, S. W., Stringfellow, G. B. (2001) Surfactant effects on doping of GaAs grown by organometallic vapor phase epitaxy. Applied Physics Letters, 78 (20). 3038-3040 doi:10.1063/1.1371790
Hobson, W. S., Harris, T. D., Abernathy, C. R., Pearton, S. J. (1991) High quality AlxGa1−xAs grown by organometallic vapor phase epitaxy using trimethylamine alane as the aluminum precursor. Applied Physics Letters, 58 (1). 77-79 doi:10.1063/1.104450
Mohideen, U., Hobson, W. S., Pearton, S. J., Ren, F., Slusher, R. E. (1994) GaAs/AlGaAs microdisk lasers. Applied Physics Letters, 64 (15). 1911-1913 doi:10.1063/1.111740
Abernathy, C. R., Wisk, P. W., Pearton, S. J., Hobson, W. S., Fuoss, P. H., Lamelas, F. J., Chu, S. N. G., Ren, F. (1992) Thermal stability of GaAs (C)/InAs superlattices grown by metalorganic molecular beam epitaxy. Applied Physics Letters, 60 (11). 1339-1341 doi:10.1063/1.107336
Von Neida, A. E., Pearton, S. J., Hobson, W. S., Abernathy, C. R. (1989) Interaction of Be and O in GaAs. Applied Physics Letters, 54 (16). 1540-1542 doi:10.1063/1.101344
 
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