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Hjalmarson, Harold P. (1989) High‐field mobility of light holes in strained quantum wells. Applied Physics Letters, 54 (22). 2215-2217 doi:10.1063/1.101128

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Reference TypeJournal (article/letter/editorial)
TitleHigh‐field mobility of light holes in strained quantum wells
JournalApplied Physics Letters
AuthorsHjalmarson, Harold P.Author
Year1989 (May 29)Volume54
Issue22
PublisherAIP Publishing
DOIdoi:10.1063/1.101128Search in ResearchGate
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Mindat Ref. ID8486819Long-form Identifiermindat:1:5:8486819:8
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Full ReferenceHjalmarson, Harold P. (1989) High‐field mobility of light holes in strained quantum wells. Applied Physics Letters, 54 (22). 2215-2217 doi:10.1063/1.101128
Plain TextHjalmarson, Harold P. (1989) High‐field mobility of light holes in strained quantum wells. Applied Physics Letters, 54 (22). 2215-2217 doi:10.1063/1.101128
In(1989, May) Applied Physics Letters Vol. 54 (22) AIP Publishing

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Laikhtman, B. (1991) High‐temperature hole mobility in strained quantum wells. Applied Physics Letters, 59 (23). 3021-3023 doi:10.1063/1.105804
Bennett, Brian R., Ancona, Mario G., Boos, J. Brad, Shanabrook, Benjamin V. (2007) Mobility enhancement in strained p-InGaSb quantum wells. Applied Physics Letters, 91 (4). 42104pp. doi:10.1063/1.2762279
Reithmaier, J.‐P., Cerva, H., Lösch, R. (1989) Investigation of the critical layer thickness in elastically strained InGaAs/GaAlAs quantum wells by photoluminescence and transmission electron microscopy. Applied Physics Letters, 54 (1). 48-50 doi:10.1063/1.100830
Woodhead, J. (1989) Comment on ‘‘Investigation of the critical layer thickness in elastically strained InGaAs/GaAlAs quantum wells by photoluminescence and transmission electron microscopy’’ [Appl. Phys. Lett.54, 48 (1989)]. Applied Physics Letters, 55 (20). 2147 doi:10.1063/1.102085
Huang, K. F., Tai, K., Chu, S. N. G., Cho, A. Y. (1989) Optical studies of InxGa1−xAs/GaAs strained‐layer quantum wells. Applied Physics Letters, 54 (20). 2026-2028 doi:10.1063/1.101181
Schneider, R. P., Wessels, B. W. (1989) Monolayer abruptness in highly strained InAsxP1−x/InP quantum well interfaces. Applied Physics Letters, 54 (12). 1142-1144 doi:10.1063/1.100742
Höpfel, R. A., Shah, J., Wolff, P. A., Gossard, A. C. (1986) Negative absolute mobility of holes inn‐doped GaAs quantum wells. Applied Physics Letters, 49 (10). 572-574 doi:10.1063/1.97044
Cheng, J.‐P., Kesan, V. P., Grutzmacher, D. A., Sedgwick, T. O., Ott, J. A. (1993) Cyclotron resonance studies of two‐dimensional holes in strained Si1−xGex/Si quantum wells. Applied Physics Letters, 62 (13). 1522-1524 doi:10.1063/1.108627
Myronov, M., Leadley, D. R., Shiraki, Y. (2009) High mobility holes in a strained Ge quantum well grown on a thin and relaxed Si0.4Ge0.6/LT-Si0.4Ge0.6/Si(001) virtual substrate. Applied Physics Letters, 94 (9). 92108pp. doi:10.1063/1.3090034
Łepkowski, S. P., Teisseyre, H., Suski, T., Perlin, P., Grandjean, N., Massies, J. (2001) Piezoelectric field and its influence on the pressure behavior of the light emission from GaN/AlGaN strained quantum wells. Applied Physics Letters, 79 (10). 1483-1485 doi:10.1063/1.1396631
Tober, Richard L., Bahder, Thomas B. (1993) Determining the electric field in [111] strained‐layer quantum wells. Applied Physics Letters, 63 (17). 2369-2371 doi:10.1063/1.110478
 
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