Vote for your favorite mineral in #MinCup25! - Sanidine vs. Hematite
It's a pair of often-overlooked classics as potassium feldspar sanidine competes with iron ore hematite.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Fan, D., Jaccodine, R. J. (1989) Reduction of transient‐enhanced diffusion of boron in silicon by implantation through oxide. Applied Physics Letters, 54 (7). 603-605 doi:10.1063/1.100891

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleReduction of transient‐enhanced diffusion of boron in silicon by implantation through oxide
JournalApplied Physics Letters
AuthorsFan, D.Author
Jaccodine, R. J.Author
Year1989 (February 13)Volume54
Issue7
PublisherAIP Publishing
DOIdoi:10.1063/1.100891Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8487466Long-form Identifiermindat:1:5:8487466:7
GUID0
Full ReferenceFan, D., Jaccodine, R. J. (1989) Reduction of transient‐enhanced diffusion of boron in silicon by implantation through oxide. Applied Physics Letters, 54 (7). 603-605 doi:10.1063/1.100891
Plain TextFan, D., Jaccodine, R. J. (1989) Reduction of transient‐enhanced diffusion of boron in silicon by implantation through oxide. Applied Physics Letters, 54 (7). 603-605 doi:10.1063/1.100891
In(1989, February) Applied Physics Letters Vol. 54 (7) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Fan, D., Parks, J. M., Jaccodine, R. J. (1991) Effect of fluorine on the diffusion of through‐oxide implanted boron in silicon. Applied Physics Letters, 59 (10). 1212-1214 doi:10.1063/1.105506
Fan, D., Huang, J., Jaccodine, R. J., Kahora, P., Stevie, F. (1987) Enhanced tail diffusion of ion implanted boron in silicon. Applied Physics Letters, 50 (24). 1745-1747 doi:10.1063/1.97735
Huang, J., Fan, D., Jaccodine, R. J. (1988) Reverse annealing and low‐temperature diffusion of boron in boron‐implanted silicon. Journal of Applied Physics, 63 (11). 5521-5525 doi:10.1063/1.340328
Fan, D., Jaccodine, R. J. (1990) Role of recoil implanted oxygen in determining boron diffusion in silicon. Journal of Applied Physics, 67 (10). 6135-6140 doi:10.1063/1.345175
Angelucci, R., Negrini, P., Solmi, S. (1986) Transient enhanced diffusion of dopants in silicon induced by implantation damage. Applied Physics Letters, 49 (21). 1468-1470 doi:10.1063/1.97305
Nishikawa, Satoshi, Tanaka, Akira, Yamaji, Tetsuo (1992) Reduction of transient boron diffusion in preamorphized Si by carbon implantation. Applied Physics Letters, 60 (18). 2270-2272 doi:10.1063/1.107051
Jaccodine, R. J. (1968) Precipitates Formed by High‐Concentration Phosphorus Diffusion in Silicon. Journal of Applied Physics, 39 (7). 3105-3108 doi:10.1063/1.1656741
Uematsu, Masashi (1997) Simulation of Transient Enhanced Diffusion of Boron Induced by Silicon Self-Implantation. Japanese Journal of Applied Physics, 36. doi:10.1143/jjap.36.l982
Guo, Qiang, Bao, Ximao, Hong, Jianming, Yan, Yong, Feng, Duan (1989) Implantation damage and anomalous diffusion of implanted boron in silicon. Applied Physics Letters, 54 (15). 1433-1435 doi:10.1063/1.101353
Shimada, Norihiro, Aoki, Takaaki, Matsuo, Jiro, Yamada, Isao, Goto, Kenichi, Sugui, T. (1998) Reduction of boron transient enhanced diffusion in silicon by low-energy cluster ion implantation. Materials Chemistry and Physics, 54. 80-83 doi:10.1016/s0254-0584(98)00108-4
El Mubarek, H. A. W., Ashburn, P. (2003) Reduction of boron thermal diffusion in silicon by high energy fluorine implantation. Applied Physics Letters, 83 (20). 4134-4136 doi:10.1063/1.1622434
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 7, 2025 13:20:40
Go to top of page