Vote for your favorite mineral in #MinCup25! - Zunyite vs. Molybdenite
It's the visually-unmistakable #zunyite vs the physically funky #molybdenite.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Nishikawa, Satoshi, Tanaka, Akira, Yamaji, Tetsuo (1992) Reduction of transient boron diffusion in preamorphized Si by carbon implantation. Applied Physics Letters, 60 (18). 2270-2272 doi:10.1063/1.107051

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleReduction of transient boron diffusion in preamorphized Si by carbon implantation
JournalApplied Physics Letters
AuthorsNishikawa, SatoshiAuthor
Tanaka, AkiraAuthor
Yamaji, TetsuoAuthor
Year1992 (May 4)Volume60
Issue18
PublisherAIP Publishing
DOIdoi:10.1063/1.107051Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8498497Long-form Identifiermindat:1:5:8498497:3
GUID0
Full ReferenceNishikawa, Satoshi, Tanaka, Akira, Yamaji, Tetsuo (1992) Reduction of transient boron diffusion in preamorphized Si by carbon implantation. Applied Physics Letters, 60 (18). 2270-2272 doi:10.1063/1.107051
Plain TextNishikawa, Satoshi, Tanaka, Akira, Yamaji, Tetsuo (1992) Reduction of transient boron diffusion in preamorphized Si by carbon implantation. Applied Physics Letters, 60 (18). 2270-2272 doi:10.1063/1.107051
In(1992, May) Applied Physics Letters Vol. 60 (18) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Nishikawa, Satoshi, Yamaji, Tetsuo (1993) Elimination of secondary defects in preamorphized Si by C+implantation. Applied Physics Letters, 62 (3). 303-305 doi:10.1063/1.108968
Yamaji, Tetsuo, Igarashi, Yasushi, Nishikawa, Satoshi (1992) Linewidth dependence of notchlike void generation in fine aluminum conductors. Applied Physics Letters, 60 (16). 1945-1947 doi:10.1063/1.107159
Tanaka, Akira, Yamaji, Tetsuo, Nishikawa, Satoshi (1991) Modeling of Mechanism of Leakage in a Shallow p+/n Junction Formed by Preamorphization. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l775
Fan, D., Jaccodine, R. J. (1989) Reduction of transient‐enhanced diffusion of boron in silicon by implantation through oxide. Applied Physics Letters, 54 (7). 603-605 doi:10.1063/1.100891
Igarashi, Yasushi, Yamaji, Tetsuo, Nishikawa, Satoshi (1990) A New Mechanism of Failure in Silicon p+/n Junction Induced by Diffusion Barrier Metals. Japanese Journal of Applied Physics, 29. doi:10.1143/jjap.29.l2337
Impellizzeri, G., dos Santos, J. H. R., Mirabella, S., Priolo, F., Napolitani, E., Carnera, A. (2004) Role of fluorine in suppressing boron transient enhanced diffusion in preamorphized Si. Applied Physics Letters, 84 (11). 1862-1864 doi:10.1063/1.1675935
Poon, Chyiu Hyia, See, Alex, Tan, Yunling, Zhou, Meisheng, Gui, Dong (2008) Suppression of boron deactivation and diffusion in preamorphized silicon after nonmelt laser annealing by carbon co-implantation. Journal of Applied Physics, 103 (8). 84906pp. doi:10.1063/1.2909957
Kim, Y. M., Lo, G. Q., Kwong, D. L., Tseng, H. H., Hance, R. (1989) Anomalous transient diffusion of boron implanted into preamorphized Si during rapid thermal annealing. Applied Physics Letters, 55 (22). 2316-2318 doi:10.1063/1.102048
Walker, A. J. (1992) Rapid thermal diffusion of boron implanted as boron difluoride in preamorphized silicon. Journal of Applied Physics, 71 (4). 2033-2035 doi:10.1063/1.351147
Packan, P. A., Plummer, J. D. (1990) Transient diffusion of low‐concentration B in Si due to29Si implantation damage. Applied Physics Letters, 56 (18). 1787-1789 doi:10.1063/1.103100
(2010) Impact of ion implantation boundary dimensionality on boron transient diffusion in submicron scale patterns. Applied Physics Letters, 97 (12). 121907pp. doi:10.1063/1.3492840
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 12, 2025 15:01:02
Go to top of page